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A Study on the Properties of the Magnetic Semiconductor GaMnAs Depending on Thin Film Deposition and the Treatment Conditions  

Kim, Dong-Sik (Dept. of Computer Systems & Engineering, Inha Technical College)
Publication Information
전자공학회논문지 IE / v.45, no.3, 2008 , pp. 1-4 More about this Journal
Abstract
We investigate magnetic semiconductor thin films for application towards spintronics, which can overcome current limitations in semiconductor devices. GaMnAs magnetic semiconducting films studied are easily integrated into conventional semiconductor processes and also offer a wide range of application, therefore it shows much promise as a future material. However the Curie temperature at which magnetic properties exist for GnMnAs is very low, also depending on deposition conditions the properties of the film can vary widely. In order to study these issues we investigate the best possible deposition conditions for magnetic properties.
Keywords
DMS (diluted magnetic semiconductor); GaMnAs; spintronics; curie temperature;
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  • Reference
1 G. Prinz, 'Optical Manipulation of Nuclear Spin by a Two-Dimensional Electron Gas', Phys. Today 48, 58 (1995); science 282, 1660(1998)
2 J. Sadowski, R. Mathieu and P.Svedlindh, "Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates", Appl. Phys. Lett 78(21), 3271(2001)   DOI   ScienceOn
3 A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, T. Kuroiwa, A. Oiwa, A. Endo, S. Katsumoto and Y. lye, "Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs", J. Cryst. Growth 175/176, 1069. (1997)   DOI   ScienceOn
4 F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, "Transport properties and origin of ferromagnetism in(Ga,Mn)As", Phys. Rev. B 57(4), R2037(1998)   DOI
5 M. Tazima K. Yamamoto, D. Okazawa, A. Nagashima, and J. Yoshino, "Effect of Mn on the low temperature growth of GaAs and GaMnAs", Physica E 10, 186(2001)   DOI   ScienceOn
6 H. Ohno, H. Munekata, T. penney, S. von Molnar, and L. L. Chang, "Magnetotransport properties of p-Tpye (In,Mn)As Diluted Magnetic III-V Semiconductors", Phys. Rev. Lett. 68, 2664(1992)   DOI   ScienceOn
7 H. Ohno, "Spin Relaxation in GaAs(110) Quantum Wells", Science 281, 951(1998)   DOI   ScienceOn
8 H. Ohno and F. Matsukura, "A ferromagnetic III-V semiconductor: (Ga,Mn)As", Solid state Comm. 117, 179(2001)   DOI   ScienceOn