• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.133-137
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• 2023

This study the problem of deposition uniformity observed during Mist-CVD deposition experiments. The TRIZ's ADRIGE algorithm, a problem-solving technique, is utilized to systematically analyze the issue and propose solutions. Through problem and resource analysis, technical contradictions are identified regarding the precursor's volume and its path when it encounters the substrate. To resolve these contradictions, the concept of applying the principle of dimensional change to transform the precursor's three-dimensional path into a one-dimensional path is suggested. The chosen solution involves the design of an enhanced Mist-CVD system, which is evaluated for feasibility and analyzed using computational fluid dynamics. The analysis confirms that the deposition uniformity consistently follows a pattern and demonstrates an improvement in uniformity. The improved Mist-CVD equipment is validated through analysis, providing evidence of its feasibility and yielding satisfactory results.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.427-431
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• 2020

In this research, we evaluated the electrical properties of polycrystalline-gallium-oxIde (Ga₂O₃) thin films grown by mist-CVD. A 500~800 nm-thick Ga₂O₃ film was used as a channel in a fabricated bottom-gate MOSFET device. The phase stability of the β-phase Ga₂O₃ layer was enhanced by an annealing treatment. A Ti/Al metal stack served as source and drain electrodes. Maximum drain current (I_D) exceeded 1 mA at a drain voltage (V_D) of 20 V. Electron mobility of the β-Ga₂O₃ channel was determined from maximum transconductance (g_m), as approximately, 1.39 ㎠/Vs. Reasonable device characteristics were demonstrated, from measurement of drain current-gate voltage, for mist-CVD-grown Ga₂O₃ thin films.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.500-504
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• 2023

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.101-104
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• 2022

Mist-CVD is known to have advantages of low cost and high productivity compared to ALD and PECVD methods. It is capable of reacting to the substrate by misting an aqueous solution using ultrasonic waves under vacuum-free conditions of atmospheric pressure. In particular, Ga₂O₃ is regarded as advanced power semiconductor material because of its high quality of transmittance, and excellent electrical conductivity through N-type doping. In this study, Computational Fluid Dynamics were used to predict the uniformity of the thin film on a large-area substrate. And also the deposition pattern and uniformity were analyzed using the flow velocity and particle tracking method. The uniformity was confirmed by quantifying the deposition cross section with an FIB-SEM, and the consistency of the uniformity prediction was secured through the analysis of the CFD distribution. With the analysis and experimental results, the match rate of deposition area was 80.14% and the match rate of deposition thickness was 55.32%. As the experimental and analysis results were consistent, it was confirmed that it is possible to predict the deposition thickness uniformity of Mist-CVD.

• 반도체디스플레이기술학회지
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• 제21권4호
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• pp.81-85
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• 2022

Mist-CVD is known to have advantages of low cost and high productivity method since the precursor solution is misting with an ultrasonic generator and reacted on the substrate under vacuum-free conditions of atmospheric pressure. However, since the deposition distribution is not uniform, various efforts have been made to derive optimal conditions by changing the angle of the substrate and the position of the outlet to improve the result of the preceding study. Therefore, in this study, a deposition distribution uniformity model was derived through the shape and position of the substrate support and the conditions of inlet flow rate using the particle tracking method of computational fluid dynamics (CFD). The results of analysis were compared with the previous studies through experiment. It was confirmed that the rate of deposition area was improved from 38.7% to 100%, and the rate of deposition uniformity was 79.07% which was higher than the predicted result of simulation. Particle tracking method can reduce trial and error in experiments and can be considered as a reliable prediction method.

• 한국전기전자재료학회논문지
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• 제32권6호
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• pp.528-533
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• 2019

We investigated the growth of $(Al_xGa_{1-x})_2O_3$ thin films on c-plane sapphire substrates that were grown by mist chemical vapor deposition (mist CVD). The precursor solution was prepared by mixing and dissolving source materials such as gallium acetylacetonate and aluminum acetylacetonate in deionized water. The [Al]/[Ga] mixing ratio (MR) of the precursor solution was adjusted in the range of 0~4.0. The Al contents of $(Al_xGa_{1-x})_2O_3$ thin films were increased from 8 to 13% with the increase of the MR of Al. As a result, the optical bandgap of the grown thin films changed from 5.18 to 5.38 eV. Therefore, it was determined that the optical bandgap of grown $(Al_xGa_{1-x})_2O_3$ thin films could be effectively engineered by controlling Al content.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.134-138
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• 2023

This study focuses on the analysis of the results of computational fluid dynamics simulations of mist-chemical vapor deposition for the growth of an epitaxial wafer in power semiconductor technology using artificial intelligence techniques. The conventional approach of predicting the uniformity of the deposited layer using computational fluid dynamics and design of experimental takes considerable time. To overcome this, artificial intelligence method, which is widely used for optimization, automation, and prediction in various fields, was utilized to analyze the computational fluid dynamics simulation results. The computational fluid dynamics simulation results were analyzed using a supervised deep neural network model for regression analysis. The predicted results were evaluated quantitatively using Euclidean distance calculations. And the Bayesian optimization was used to derive the optimal condition, which results obtained through deep neural network training showed a discrepancy of approximately 4% when compared to the results obtained through computational fluid dynamics analysis. resulted in an increase of 146.2% compared to the previous computational fluid dynamics simulation results. These results are expected to have practical applications in various fields.

• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.74-80
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• 2023

Gallium oxide (Ga₂O₃) thin films were grown on c-, a-, m-, r-plane sapphire substrates using a mist chemical vapor deposition system. Various growth temperature range of 400~600℃ was applied for Ga₂O₃ thin film deposition. Then, several structural properties were characterized such as film thickness, crystal phase, lattice orientation, surface roughness, and optical bandgap. Under the certain growth temperature of 500℃, all grown Ga₂O₃ featured rhombohedral crystal structures and well-aligned preferred orientation to sapphire substrate. The films grown on c-and r-plane sapphire substrates, showed low surface roughness and large optical bandgap compared to those on a-and m-plane substrates. Therefore, various sapphire orientation can be potentially applicable for future Ga₂O₃-based electronics applications.

• 열처리공학회지
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• 제35권2호
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• pp.51-56
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• 2022

In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga₂O₃ templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.

• Progress in Superconductivity
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• 제9권1호
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• pp.102-106
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• 2007

YBCO films have been synthesized using a spray pyrolysis method. We used nitrates of Y, Ba, Cu as precursors. Deposition was made on $LaAlO_3$ (100) single crystal substrate by spraying the mist of aqueous precursor solution generated by a concentric nozzle. The distance between concentric nozzle and substrate was 15 cm. C-axis oriented films were obtained at deposition temperature of $740{\sim}800^{\circ}C$ and working pressure of 20 Torr. Oxygen partial pressure was 3 Torr and substrate was transported with the speed ranging from 0.23 cm/min to 0.7 cm/min by reel to reel. Scanning electron microscope (SEM) and X-ray diffraction (XRD) observation revealed that films are smooth and highly textured with (001) planes parallel to substrate. Highest critical current density (Jc) was $1.38\;MA/cm^2$ at 77K and self-field for the film with a thickness of $0.5\;{\mu}m$ prepared at a substrate temperature of $780^{\circ}C$ and $PO_2\;=3\;Torr$. The effect of temperature on the microstructure and YBCO phase formation will be discussed.