Journal of the Korean Society for Heat Treatment (열처리공학회지)

The Korean Society for Heat Treatment (한국열처리공학회)
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Various Shape of Carbon Layer on Ga2O3 Thin Film by Controlling Methane Fraction in Radio Frequency Plasma Chemical Vapor Deposition

Ga2O3박막 상에서의 RF 플라즈마 화학기상증착법의 메테인 분율 조절에 의한 탄소층의 다양한 형상 제어 연구

  • Seo, Ji-Yeon (Korea Institute of Ceramic Engineering and Technology, Semiconductor Materials Center) ;
  • Shin, Yun-Ji (Korea Institute of Ceramic Engineering and Technology, Semiconductor Materials Center) ;
  • Jeong, Seong-Min (Korea Institute of Ceramic Engineering and Technology, Semiconductor Materials Center) ;
  • Kim, Tae-Gyu (School of Mechatronics Engineering, Pusan National University) ;
  • Bae, Si-Young (Korea Institute of Ceramic Engineering and Technology, Semiconductor Materials Center)
  • 서지연 (한국세라믹기술원, 반도체소재센터) ;
  • 신윤지 (한국세라믹기술원, 반도체소재센터) ;
  • 정성민 (한국세라믹기술원, 반도체소재센터) ;
  • 김태규 (부산대학교, 메카트로닉스공학과) ;
  • 배시영 (한국세라믹기술원, 반도체소재센터)
  • Received : 2022.01.28
  • Accepted : 2022.02.25
  • Published : 2022.03.30
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Abstract

In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga2O3 templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.

Keywords

Acknowledgement

이 연구는 세라믹전략연구사업(KPP20001)의 지원을 받아 수행되었습니다.

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