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Uniformity Prediction of Mist-CVD Ga2O3 Thin Film using Particle Tracking Methodology  

Ha, Joohwan (Research Center for Materials, Components and Equipment, Gyeonggi Province, Advanced Institute of Convergence Technology, Seoul National University)
Park, Sodam (Research Center for Materials, Components and Equipment, Gyeonggi Province, Advanced Institute of Convergence Technology, Seoul National University)
Lee, Hakji (Research Center for Materials, Components and Equipment, Gyeonggi Province, Advanced Institute of Convergence Technology, Seoul National University)
Shin, Seokyoon (Advanced Electronic Materials Laboratory, Advanced Institute of Convergence Technology, Seoul National University)
Byun, Changwoo (Research Center for Materials, Components and Equipment, Gyeonggi Province, Advanced Institute of Convergence Technology, Seoul National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.21, no.3, 2022 , pp. 101-104 More about this Journal
Abstract
Mist-CVD is known to have advantages of low cost and high productivity compared to ALD and PECVD methods. It is capable of reacting to the substrate by misting an aqueous solution using ultrasonic waves under vacuum-free conditions of atmospheric pressure. In particular, Ga2O3 is regarded as advanced power semiconductor material because of its high quality of transmittance, and excellent electrical conductivity through N-type doping. In this study, Computational Fluid Dynamics were used to predict the uniformity of the thin film on a large-area substrate. And also the deposition pattern and uniformity were analyzed using the flow velocity and particle tracking method. The uniformity was confirmed by quantifying the deposition cross section with an FIB-SEM, and the consistency of the uniformity prediction was secured through the analysis of the CFD distribution. With the analysis and experimental results, the match rate of deposition area was 80.14% and the match rate of deposition thickness was 55.32%. As the experimental and analysis results were consistent, it was confirmed that it is possible to predict the deposition thickness uniformity of Mist-CVD.
Keywords
Power semiconductor; $Ga_2O_3$; Mist-CVD; CFD; Particle tracking; Droplet;
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