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http://dx.doi.org/10.12656/jksht.2022.35.2.51

Various Shape of Carbon Layer on Ga2O3 Thin Film by Controlling Methane Fraction in Radio Frequency Plasma Chemical Vapor Deposition  

Seo, Ji-Yeon (Korea Institute of Ceramic Engineering and Technology, Semiconductor Materials Center)
Shin, Yun-Ji (Korea Institute of Ceramic Engineering and Technology, Semiconductor Materials Center)
Jeong, Seong-Min (Korea Institute of Ceramic Engineering and Technology, Semiconductor Materials Center)
Kim, Tae-Gyu (School of Mechatronics Engineering, Pusan National University)
Bae, Si-Young (Korea Institute of Ceramic Engineering and Technology, Semiconductor Materials Center)
Publication Information
Journal of the Korean Society for Heat Treatment / v.35, no.2, 2022 , pp. 51-56 More about this Journal
Abstract
In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga2O3 templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.
Keywords
Carbon isotope; Diamond; Gallium oxide; RF-CVD (Radio frequency plasma chemical vapor deposition); Conductivity; Thermal characteristics;
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