• 제목/요약/키워드: Minimum Contacts

검색결과 32건 처리시간 0.024초

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-film Transistors by AZO/Ag/AZO Multilayer Transparent Electrode

  • 노영수;양정도;박동희;위창환;조세희;김태환;최원국
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
    • /
    • pp.443-443
    • /
    • 2012
  • We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

  • PDF

Aspects of size effect on discrete element modeling of normal strength concrete

  • Gyurko, Zoltan;Nemes, Rita
    • Computers and Concrete
    • /
    • 제28권5호
    • /
    • pp.521-532
    • /
    • 2021
  • Present paper focuses on the modeling of size effect on the compressive strength of normal concrete with the application of Discrete Element Method (DEM). Test specimens with different size and shape were cast and uniaxial compressive strength test was performed on each sample. Five different concrete mixes were used, all belonging to a different normal strength concrete class (C20/25, C30/37, C35/45, C45/55, and C50/60). The numerical simulations were carried out by using the PFC 5 software, which applies rigid spheres and contacts between them to model the material. DEM modeling of size effect could be advantageous because the development of micro-cracks in the material can be observed and the failure mode can be visualized. The series of experiments were repeated with the model after calibration. The relationship of the parallel bond strength of the contacts and the laboratory compressive strength test was analyzed by aiming to determine a relation between the compressive strength and the bond strength of different sized models. An equation was derived based on Bazant's size effect law to estimate the parallel bond strength of differently sized specimens. The parameters of the equation were optimized based on measurement data using nonlinear least-squares method with SSE (sum of squared errors) objective function. The laboratory test results showed a good agreement with the literature data (compressive strength is decreasing with the increase of the size of the specimen regardless of the shape). The derived estimation models showed strong correlation with the measurement data. The results indicated that the size effect is stronger on concretes with lower strength class due to the higher level of inhomogeneity of the material. It was observed that size effect is more significant on cube specimens than on cylinder samples, which can be caused by the side ratios of the specimens and the size of the purely compressed zone. A limit value for the minimum size of DE model for cubes and cylinder was determined, above which the size effect on compressive strength can be neglected within the investigated size range. The relationship of model size (particle number) and computational time was analyzed and a method to decrease the computational time (number of iterations) of material genesis is proposed.

GaN계 수직형 발광 다이오드를 위한 N-face n-GaN의 인듐계 저저항 오믹접촉 연구 (Low Resistance Indium-based Ohmic Contacts to N-face n-GaN for GaN-based Vertical Light Emitting Diodes)

  • 강기만;박민주;곽준섭;김현수;권광우;김영호
    • 대한금속재료학회지
    • /
    • 제48권5호
    • /
    • pp.456-461
    • /
    • 2010
  • We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

  • No, Young-Soo;Yang, Jeong-Do;Park, Dong-Hee;Kim, Tae-Whan;Choi, Ji-Won;Choi, Won-Kook
    • 센서학회지
    • /
    • 제22권2호
    • /
    • pp.105-110
    • /
    • 2013
  • We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 ${\mu}m$) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of $10^{-12}$ A, a threshold voltage of 0.41 V, a field effect mobility of $10.86cm^2/Vs$, and an on/off ratio of $9{\times}10^9$. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

A force-Guided Control with Adaptive Accommodation Bor Complex Assembly

  • Sungchul Kang;Kim, Munsang;Lee, Chong W.;Lee, Kyo-Il
    • 제어로봇시스템학회:학술대회논문집
    • /
    • 제어로봇시스템학회 1998년도 제13차 학술회의논문집
    • /
    • pp.14-19
    • /
    • 1998
  • In this paper, a target approachable force-guided control with adaptive accommodation for the complex assembly is presented. The complex assembly (CA) is defined as a task which deals with complex shaped parts including concavity or whose environment is so complex that unexpected contacts occur frequently during insertion. CA tasks are encountered frequently in the field of the manufacturing automation and various robot applications. To make CA successful, both the bounded wrench condition and the target approachability condition should be satisfied simultaneously during insertion. By applying the convex optimization technique, an optimum target approaching twist can be determined at each instantaneous contact state as a global minimum solution. Incorporated with an admissible perturbation method, a new CA algorithm using only the sensed resultant wrench and the target twist is developed without motion planning nor contact analysis which requires the geometry of the part and the environment. Finally, a VME-bus based real-time control system is built to experiment various CA task. T-insertion task as a planar CA and double-peg assembly task as a spacial assembly were successfully executed by implementing the new force-guided control with adaptive accommodation.

  • PDF

초음파 진동 절삭에 의한 가공정도 향상에 관한 연구 (A Study on the Improvement of Cutting Precision by the Ultrasonic Vibration Cutting)

  • 강종표;김병화;송지복
    • 한국정밀공학회지
    • /
    • 제8권2호
    • /
    • pp.69-77
    • /
    • 1991
  • The ultimate target of machining process is to get both precision and productivity simultaneously. To obtain these effects, many kinds of machining methods have been considered and various research effort has been made for a long time. Ultrasonic vibration cutting method is one of these methods. When the ultrasonic vibration is applied on the workpiece or the tool, the cutting tool makes periodical contact with workpiece due to vibration. The cutting is performed by vibrating impact force while the cutting tool contacts the workpiece, and it makes the displacement of both the tool and workpiece minimum in three force component (principal, axial, radial force) direction during the cutting process. So the cutting precision is better than conventional cutting method. The main results that obtained by the expriments of ultrasonic vibration cutting are as follows; 1. The value of roundness is about 1.4 ~ 2.5 [${\mu}m$] and this value is three or four times less than that of conventional cutting. 2. The value of surface roughness is about 1.2~2.2 [${\mu}m$] and this value is the two or three times less than that of conventional cutting.

  • PDF

Assessment of the quality of life in maxillectomy patients: A longitudinal study

  • Kumar, Pradeep;Alvi, Habib Ahmad;Rao, Jitendra;Singh, Balendra Pratap;Jurel, Sunit Kumar;Kumar, Lakshya;Aggarwal, Himanshi
    • The Journal of Advanced Prosthodontics
    • /
    • 제5권1호
    • /
    • pp.29-35
    • /
    • 2013
  • PURPOSE. To longitudinally assess the quality of life in maxillectomy patients rehabilitated with obturator prosthesis. MATERIALS AND METHODS. Thirty-six subjects were enrolled in the span of 16 months, out of which six were dropouts. Subjects (age group 20-60 years) with maxillary defects, irrespective of the cause, planned for definite obturator prosthesis, were recruited. The Hindi version of European Organization for Research and Treatment of Cancer, Head and Neck version 1 of Quality of Life Questionnaire was used before surgical intervention and one month after definitive obturator. Questionnaire includes 35 questions related to the patient's physical health, well being, psychological status, social relation and environmental conditions. The data were processed with statistical package for social science (SPSS). Probability level of P<.05 was considered statistically significant. RESULTS. The quality of life after rehabilitation with obturator prosthesis was 81.48% (${\pm}13.64$) on average. On item-level, maximum mean scores were obtained for items problem with teeth ($1.87{\pm}0.94$), pain in mouth ($1.80{\pm}0.92$), trouble in eating ($1.70{\pm}0.88$), trouble in talking to other people ($1.60{\pm}1.22$), problems in swallowing solid food ($1.57{\pm}1.22$) and bothering appearance ($1.53{\pm}1.04$); while minimum scores were obtained for the items coughing ($1.17{\pm}0.38$), hoarseness of voice ($1.17{\pm}0.53$), painful throat ($1.13{\pm}0.43$), trouble in having social contacts with friends ($1.10{\pm}0.40$) and trouble having physical contacts with family or friends ($1.10{\pm}0.31$). CONCLUSION. Obturator prosthesis is a highly positive and non-invasive approach to improve the quality of life of patients with maxillectomy defects.

Nano-delamination monitoring of BFRP nano-pipes of electrical potential change with ANNs

  • Altabey, Wael A.;Noori, Mohammad;Alarjani, Ali;Zhao, Ying
    • Advances in nano research
    • /
    • 제9권1호
    • /
    • pp.1-13
    • /
    • 2020
  • In this work, the electrical potential (EP) technique with an artificial neural networks (ANNs) for monitoring of nanostructures are used for the first time. This study employs an expert system to identify size and localize hidden nano-delamination (N.Del) inside layers of nano-pipe (N.P) manufactured from Basalt Fiber Reinforced Polymer (BFRP) laminate composite by using low-cost monitoring method of electrical potential (EP) technique with an artificial neural networks (ANNs), which are combined to decrease detection effort to discern N.Del location/size inside the N.P layers, with high accuracy, simple and low-cost. The dielectric properties of the N.P material are measured before and after N.Del introduced using arrays of electrical contacts and the variation in capacitance values, capacitance change and node potential distribution are analyzed. Using these changes in electrical potential due to N.Del, a finite element (FE) simulation model for N.Del location/size detection is generated by ANSYS and MATLAB, which are combined to simulate sensor characteristic, therefore, FE analyses are employed to make sets of data for the learning of the ANNs. The method is applied for the N.Del monitoring, to minimize the number of FE analysis in order to keep the cost and save the time of the assessment to a minimum. The FE results are in excellent agreement with an ANN and the experimental results available in the literature, thus validating the accuracy and reliability of the proposed technique.

증착조건 및 열처리 온도에 따른 유기 TFT의 활성층용 펜타센 박막의 전기적 특성 연구 (The Electrical Characteristics of Pentacene Thin-Film for the active layer of Organic TFT deposited at the Various Evaporation conditions and the Annealing Temperatures)

  • 구본원;정민경;김도현;송정근
    • 대한전자공학회:학술대회논문집
    • /
    • 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
    • /
    • pp.80-83
    • /
    • 2000
  • 본 연구에서는 유기물 전자소자 개발을 위한 기초 연구로서 증착시 기판의 온도, 증칙비, 열처리 온도에 따른 펜타신 박막의 수평방향 전기전도도, 접촉저항, 면저항 둥 전기적 특성을 측정 하였다. 시료는 분말형 펜타신을 유기분자선 성막장치(OMBD)를 이용하여 성막 하였다. 전도도 계산을 위한 두께의 측정은 $\alpha$-step을 이용하였으며, TLM(transfer length method)으로 접촉저항, 면저항등 전기적 특성을 측정하였다. 전극은 Au를 사용하여 진공 증착법으로 제작하였다. 기판의 온도는 3$0^{\circ}C$, 4$0^{\circ}C$, 5$0^{\circ}C$, 6$0^{\circ}C$, 7$0^{\circ}C$, 8$0^{\circ}C$, 10$0^{\circ}C$ 일곱 종류로 하여 증착비를 달리 하였고, 열처리에 의한 효과는 10$0^{\circ}C$에서 증착한 시료를 10$0^{\circ}C$, 14$0^{\circ}C$에서 각각 10초간 열처리를 실시하였다. 기판 온도에 따른 막의 형상은 AFM을 이용하여 관찰하였다. 기판의 온도가 상승할수록 박막의 결정화가 활발히 진행되었으며 최대단일결정은 4$\mu\textrm{m}$였다. 전기전도도는 7.40$\times$$10^{-7}$ S/cm ~ 0.778$\times$$10^{-5}$ S/cm의 값을 나타내었으며, 접족저항은 10$0^{\circ}C$에서 증착하고 14$0^{\circ}C$에서 10초간 열처리 한 경우 2.5324㏁으로 가장 작았으며, 면저항은 약간의 차이는 있으나 전체적으로 ≒ $10^{9}$ Ω/ 의 값을 보였다

  • PDF

Ti/Au 금속과 n-type ZnO 박막의 Ohmic 접합 연구 (Ohmic Contact of Ti/Au Metals on n-type ZnO Thin Film)

  • 이경수;서주영;송후영;김은규
    • 한국진공학회지
    • /
    • 제20권5호
    • /
    • pp.339-344
    • /
    • 2011
  • C-plane 사파이어 기판 위에 펄스 레이저 증착법으로 증착시킨 n-type ZnO 박막에 대한 Ti/Au 금속의 Ohmic 접합특성을 TLM (transfer length method) 패턴 전극을 통하여 연구하였다. 여기서, Ti와 Au 금속박막은 전자빔 증착기와 열 증착기로 각각 35 nm와 90 nm 두께로 증착하였으며, TLM패턴은 광 리소그래피 법으로 면적이 $100{\times}100{\mu}m^2$인 전극패턴을 6~61 ${\mu}m$ 간격으로 형성하였다. Ti/Au 금속박막과 ZnO 반도체 사이의 전기적인 성질을 개선하고 응력과 계면 결함을 감소시키기 위해, 산소 가스 분위기로 $100{\sim}500^{\circ}C$ 온도에서 각각 1분간 급속열처리를 하였다. $300^{\circ}C$의 온도에서 열처리한 시료에서 $1.1{\times}10^{-4}{\Omega}{\cdot}cm^2$의 가장 낮은 비저항 값을 보였는데, 이것은 열처리 동안 티타늄 산화막 형성과정에서 ZnO 박막 표면 근처에 산소빈자리가 형성됨으로써 나타나는 전자농도의 증가가 주된 원인으로 고려되었다.