• ETRI Journal
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• v.42 no.2
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• pp.163-174
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• 2020

Numerous wearable technology companies have recently developed several headmounted display (HMD) products for virtual reality (VR) services. 5G wireless networks aim at providing high-quality 3D multimedia services such as VR, augmented reality, and mixed reality. In this study, we examine the application of millimeter-wave (mmWave) technology to realize low-latency wireless communication between an HMD and its content server. However, the propagation characteristics of mmWave present several challenges such as the deafness, blockage, and beam alignment problems, and interference among content servers. In this study, we focus on an environment that provides VR services in the mmWave band and introduce existing techniques for addressing such challenges. In addition, we employ a commercialized IEEE 802.11ad VR dongle to measure the actual data rate of an mmWave VR application and identify the degree to which the performance deteriorates when the above problems occur. Finally, we verify the feasibility of the proposed solutions through a simulation of several VR scenarios in the mmWave band.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.1
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• pp.197-202
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• 2019

A small millimeter-wave tracking radar power supply must provide stable power with minimal ripple noise and the switching frequency noise of the DC-DC converter must have a real-time self-test capability through on-the-fly monitoring without causing false alarms and ghost In this study, we developed a multi-output switching power supply with output power of more than 80% (@ 100% load) and 10 output power by adopting + 28VDC input for application to small millimeter wave tracking radar, DC-DC converter is applied for large power output and multi-output flyback method is applied for the remaining small power output. The test results show that 85% efficiency efficiency is achieved under 100% load condition.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.11
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• pp.1672-1678
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• 2022

In this paper, the relay antenna was designed in consideration of the performance of the 28GHz band 5G mobile communication relay horn antenna, such as radiation pattern and return loss. A horn array for 5G mobile communication repeater was designed by arranging the antenna elements in phase, and the performance was analyzed. Unlike conventional WCDMA (3G) and LTE (4G), in millimeter wave band communication, high path loss occurs between transmission and reception. In the design of a 5G millimeter wave horn antenna, antenna performance such as isolation and gain between antenna elements as well as gain and bandwidth of the antenna must be additionally considered. The antenna gain of the single horn antenna (1×1) and the array horn antenna (2×4) in the 28GHz band is about 10.44d Bi and 19.58dBi, respectively, and the return loss is designed to be less than -18dB. It has proven its validity and has been shown to be suitable for application to 5G mobile communication relay system.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.162-168
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• 2006

To fabricate nanometer scale InGaAs HEMTs, we have successfully developed various novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30nm $In_{0.7}Ga_{0.3}As$ HEMTs with excellent $f_T$ of 426GHz. Based on nanometer scale InGaAs HEMT technology, several high performance millimeter-wave integrated circuits have been successfully fabricated, including 77GHz MMIC chipsets for automotive radar application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1070-1078
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• 1998

A density of phonon is increased by application of electric field. At this time the phonon which has higher energy than around is called hot phonon is disappeared after 7 picosecond by scattering with electron and loss energy. Since the lifetime of phonon is very short, the effects of hot phonon can be neglected in the low speed semiconductor device, but it must be considered in high speed devices. DC and AC electric fields are applied to bulk GaAs, and the density of phonon is obtained and analyzed for its effects on electron velocity and electron distribution using Monte Carlo simulation method. Under high electric filed the density of hot phonon increased and energy of hot phonon is decreased by scattering with electron on the other hand the energy of electron is increased. Therefore electron move from central valley of conduntion band to satellite vallies and the valocity of electron decrease since the mass of electron in satellite vally is heavier than central vally. In millimeter wave frequencies, the effects of hot phonon increased at higher frequencies.

• ETRI Journal
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• v.42 no.6
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• pp.837-845
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• 2020

The objective of this study was to implement an in vitro exposure system for 28 GHz to investigate the biological effects of fifth-generation (5G) communication. A signal source of 28 GHz for 5G millimeter-wave (MMW) deployment was developed, followed by a variable attenuator for antenna input power control. A power amplifier was also customized to ensure a maximum output power of 10 W for high-power 28-GHz exposure. A 3-dB uniformity over the 80 mm × 80 mm area that corresponds to four Petri dishes of three-dimensional cell cultures can be obtained using a customized choke-ring-type antenna. An infrared camera is employed for temperature regulation during exposure by adjusting the airflow cooling rate via real-time feedback to the incubator. The reported measurement results confirm that the input power control, uniformity, and temperature regulation for 28-GHz exposure were successfully accomplished, indicating the possibility of a wide application of the implemented in vitro exposure system in the fields of various MMW dose-response studies.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.39-44
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• 2021

In this paper, two types of BPF(Band Pass Filter) which are hair-pin and interdigital have been designed for millimeter-wave application using two types of material which are LCP(Liquid Crystal Polymer) and PTFE(Polytetrafluoroethylene) and also, their performances such as bandwidth, insertion loss, and in-band flatness are compared. The proposed BPF are designed as third-order filters, and their pass band is from 26.5 GHz to 27.3 GHz. Interdigital BPF using PTFE substrate has most wide -3 dB S21 bandwidth of 7.8 GHz and hair-pin BPF using LCP substrate has most narrow -3 dB S21 bandwidth among the proposed four BPF. For in-band insertion loss, hair-pin BPF using PTFE substrate achieves low insertion loss better than -0.667 dB, and hair-pin BPF using LCP substrate exhibits relatively high insertion loss among the proposed four BPF better than -0.937 dB. However, the maximum difference in insertion loss performance among the proposed four BPF is 0.27 dB, which is too small to negligible. For in-band flatness, interdigital BPF using PTFE substrate shows greatest performance of 0.017 dB, and hair-pin BPF using LCP substrate exhibits the lowest performance of 0.07 dB. There are tiny difference in in-band flatness performance of 0.053 dB. As a results, it is considered that the BPF using LCP substrate can derive the performances similar to that of the BPF using PTFE substrate in Millimeter-wave band.

• ETRI Journal
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• v.38 no.6
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• pp.1052-1063
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• 2016

We propose a millimeter wave (MMW)-based mobile hotspot network (MHN) system for application in high-speed railways that is capable of supporting a peak backhaul link throughput of 1 Gbps per train at 400 km/h. The MHN system can be implemented in subways and high-speed trains to support passengers with smart devices and provide access to the Internet. The proposed system can overcome the inherent high path loss in MMW through system designs and high antenna gains. We present a simulation of the system performance that shows that a fixed beamforming strategy can provide high signal-to-interference-plus-noise-ratio similar to those of an adaptive beamforming strategy, with the exception of 15% of the train path in which the network can use link adaptation with low-order modulation formats or trigger a handover to maintain the connection. We also demonstrate the feasibility of the MHN system using a test bed deployed in Seoul subway line 8. The backhaul link throughput varies instantaneously between 200 Mbps and 500 Mbps depending on the SNR variations while the train is running. During the field trial, the smartphones used could make connections through offloading.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.7
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• pp.1191-1198
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• 2001

MMIC low noise amplifiers for millimeter-wave application using 0.15 $\mu$m pHEMT have been presented in this paper. The design emphasis is on active device model and EM simulation. The deficiency of conventional device models is identified. A distributed device model has been adapted to circumvent the scaling problems and, thus, to predict small signal and noise parameters accurately. Two single-ended low noise amplifier are designed using distributed active device model for Q-band(40 ∼ 44 GHz) and V-band(58 ∼65 GHz) application. The Q-band amplifier achieved a average noise figure of 2.2 dB with 18.3 dB average gain. The V-band amplifier achieved a average noise figure of 2.9 dB with 14.7 dB average gain. The design technique and model employed provides good agreement between measured and predicted results. Compared with the published data, this work also represents state-of-the-art performance in terms of gain and noise figure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.11
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• pp.1198-1206
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• 2003

In this paper, a MMIC waveguide mixer module based upon the novel suggested mode converter for wave-guide-to-microstrip transition was fabricated and measured. The insertion and return losses of the mode converter was optimized by compensating the discontinuity effect between ridge and microstrip with the modification of 50 $\Omega$ microstrip line pattern. Due to the low loss nature of the mode converter, a millimeter wave MMIC mixer chip can be successfully applied as a waveguide module for mmW waveguide communication system. The measured results of the module showed the successful MMIC chip application in waveguide and the negligible degradation of the supplied chip specification.