Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Effects of Hot Phonon in Electron Transport at Millimeter-wave Frequencies

밀리미터 주파수에서 전자의 운동에 대한 Hot Phonon의 영향 연구

  • Published : 1998.12.01
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Abstract

A density of phonon is increased by application of electric field. At this time the phonon which has higher energy than around is called hot phonon is disappeared after 7 picosecond by scattering with electron and loss energy. Since the lifetime of phonon is very short, the effects of hot phonon can be neglected in the low speed semiconductor device, but it must be considered in high speed devices. DC and AC electric fields are applied to bulk GaAs, and the density of phonon is obtained and analyzed for its effects on electron velocity and electron distribution using Monte Carlo simulation method. Under high electric filed the density of hot phonon increased and energy of hot phonon is decreased by scattering with electron on the other hand the energy of electron is increased. Therefore electron move from central valley of conduntion band to satellite vallies and the valocity of electron decrease since the mass of electron in satellite vally is heavier than central vally. In millimeter wave frequencies, the effects of hot phonon increased at higher frequencies.

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References

  1. High Field Transport in Semiconductors E. M. Conwell
  2. IEEE Trans. Electron Devices v.ED-13 High-field distribution function in GaAs E. M. Conwell;M. O. Vassel
  3. J.Phys. C v.13 A study of the energy loss mechanisms for hot electrons in CdTe and CdS from oscillatory photoconductivity and the megnetophonon effect R.J. Nicholas;A.C. Carter;S. Fung;R.A. Stradling
  4. Phys. Rev. Lett. v.27 Capture of hot electrons by ionized doors in GaAs R. Ulbrich
  5. Solid State Communications v.8 Photo excited hot LO phonons in GaAs J. Shah;R. C. Leite;J. F. Scott
  6. Phys. Rev. Lett. v.44 Raman scattering from nonequillibrium LO phonons with picosecond resolution D. von der Linde;J. Kull;H. Klingenberg
  7. Phys. Rev. B v.26 Two-phonon Raman-scattering of non-equilibrium high-frequency acoustic phonons : The TA-phonon bottleneck in GaAs K. T. Tsen;D. A. Abram;R. Bray
  8. Appl. Phys. Lett. v.50 Monte Carlo algorithm for hot phonons in polar semiconductors P. Lugli;C. Jacoboni;L. Reggiani;P. Kocevar
  9. J. Appl. Phys. v.61 Effect of a perturbed acousticphonon distribution on hot-phonon transport: Nonte Carlo Analysis P. Bordone;C. Jacoboni;P. Lugli;P. Kocevar
  10. SIAM Review v.31 Von Neumann's rejection technique reexamined A. Grzesik
  11. IEEE Trans. Electron Devices v.ED-32 Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors P. Lugli;D. K. Ferry
  12. Monte Carlo Principles and Neutron Transport Problems J. Spanier;M. Gelbard
  13. J. Phys. Society of Japan v.31 Monte carlo calculation of hot electron phenomena I. Streaming in the absence of a magnetic field T. Kurosawa;H. Maeda
  14. J. Appl. Phys. v.66 Hot-phonon and electron-hole scattering effects on the transient transport of photogenerated electron in GaAs R. P. Joshi;R. O. Grondin