• Journal of Electrical Engineering and Technology
• /
• v.3 no.1
• /
• pp.121-124
• /
• 2008

This paper presents the fabrication and field emission of carbon nanotube field emitters for a micro mass spectrometer. The carbon nanotube is an adequate material as a field emitter since it has good characteristics. We have successfully fabricated a diode field emitter and a triode field emitter. Each field emitter has been constructed using several micromachining processes and a thermal CVD process. In the case of the diode field emitter, to increase the electric field, the carbon nanotubes are selectively grown on the patterned nickel catalyst layer. The electron current of the diode field emitter is 73.2 ${\mu}A$ when the anode voltage is 1100V. That of the triode field emitter is 3.4 pA when the anode voltage is 1000V.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.30 no.11 s.254
• /
• pp.1369-1375
• /
• 2006

In this work, mechanical characteristics of stainless steel diaphragm have been studied as a potential robust substrate and a diaphragm material for micromachined devices. Lamination process techniques combined with traditional micromachining processes have been adopted as suitable fabrication technologies. To illustrate these principles, capacitive pressure sensors based on a stainless steel diaphragm have been designed, fabricated and characterized. The fabrication process for stainless steel micromachined devices keeps the membrane and substrate being at the environment of 8.65MPa pressure and $175^{\circ}C$ for a half hour and then subsequently cooled to $25^{\circ}C$. Each sensor uses a stainless steel substrate, a laminated stainless steel film as a suspended movable plate and a fixed, surface micromachined back electrode of electroplated nickel. The finite element method is adopted to investigate residual stresses formed in the process. Besides, out-of-plane deflections are calculated under pressures on the diaphragm. The sensitivity of the device fabricated using these technologies is 9.03 ppm $kPa^{-1}$ with a net capacitance change of 0.14 pF over a range 0$\sim$180 kPa.

• Proceedings of the KSME Conference
• /
• 2007.05a
• /
• pp.1617-1620
• /
• 2007

This paper presents a magnetostrictive transpositioner and its fabrication process. To get a transposition movement without shifting or twisting, it is designed as an array type. To fabricate the suggested design, micromachining and selective DC magnetron sputtering processes are combined. TbDyFe film is sputter-deposited on the back side of the bulk micromachined transpositioner, with the condition as: Ar gas pressure below $1.2{\times}10^{-9}$ torr, DC input power of 180W and heating temperature of up to $250^{\circ}C$ for the wireless control of each array component. After the sputter process, magnetization and magnetostriction of each sample are measured. X-ray diffraction studies are also carried out to determine the film structure and thickness of the sputtered film. For the operation, each component of the actuator has same length and out-of-plane motion. Each component is actuated by externally applied magnetic fields up to 0.5T and motion of the device made upward movement. As a result, deflections of the device due to the movement for the external magnetic fields are observed.

• Applied Chemistry for Engineering
• /
• v.25 no.1
• /
• pp.53-57
• /
• 2014

We describe the preparation of highly-ordered etching pits on the Nb foil through a micromachining. The effects of electrochemical polishing on the formation of uniformly-patterned protective epoxy layer was investigated. Unlike the previous process using $O_2$ plasma, well-ordered etched pits were prepared without any dry processes. As a result, the Nb foil with the well-ordered pits of $10{\mu}m{\times}5{\mu}m$ could be obtained by electrochemical etching in methanolic electrolytes for 10 min.

• Proceedings of the Korean Society of Marine Engineers Conference
• /
• 2000.05a
• /
• pp.105-109
• /
• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor the size of the pressure sensor diaphragm have become smaller year by year and a microaccelerometer with a size less than 200-300${\mu}m$ has been realized. In this paper we study some of the micromachining processes of SOI(silicon on insulator)for the microaccelerometer and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for design of SOI wafers. Successful thermal behaviors analysis and design of the SOI wafers based on the tunneling current concept using SOI wafer depend on the knowledge abut normal mechanical properties of the SCS(single crystal silicon)layer and their control through manufacturing process

• Proceedings of the Korean Society of Marine Engineers Conference
• /
• 2000.05a
• /
• pp.100-104
• /
• 2000

This paper deals with finite element analyses of residual stresses causing popping up which are induced in micromachining processes of a mcroaccelerometers. After heating the tunnel gap up to 100 degree and get it through the cooling process and the additional bean up to 80 degree and get is through the cooling process. We learn the thermal internal stress of each shape and compare the results with each other after heating the tunnel gap up to 400 degree during the Pt deposition process. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer by electrostatic force.

• Journal of Power System Engineering
• /
• v.5 no.2
• /
• pp.36-42
• /
• 2001

This paper deals with finite element analyses of residual stresses causing popping up which are induced in micromachining processes of a microaccelerometer sensors. The paddle of the micro accelerometer sensor is designed symmetric with respect to the direction of the beam. After heating the tunnel gap up to 100 degree and get it through the cooling process and the additional beam up to 80 degree and get it through the cooling process. We learn the thermal internal stresses of each shape and compare the results with each other, after heating the tunnel gap up to 400 degree during the Pt deposition process. Finally we find the optimal shape which is able to minimize the internal stresses of microaccelerometer sensor. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer sensor by electrostatic force.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.2
• /
• pp.91-95
• /
• 2014

This paper presents the structure and process technology of simple and low-cost wafer-level packaging (WLP) for thin film radio frequency (RF) devices. Low-cost practical micromachining processes were proposed as an alternative to high-cost processes, such as silicon deep reactive ion etching (DRIE) or electro-plating, in order to reduce the fabrication cost. Gold (Au)/Tin (Sn) alloy was utilized as the solder material for bonding and hermetic sealing. The small size fabricated WLP of $1.04{\times}1.04{\times}0.4mm^3$ had an average shear strength of 10.425 $kg/mm^2$, and the leakage rate of all chips was lower than $1.2{\times}10^{-5}$ atm.cc/sec. These results met Military Standards 883F (MIL-STD-883F). As the newly proposed WLP structure is simple, and its process technology is inexpensive, the fabricated WLP is a good candidate for thin film type RF devices.

• Laser Solutions
• /
• v.15 no.3
• /
• pp.7-10
• /
• 2012

Dimensions (line/space) of circuits in IC substrates for high-end chips (e.g. CPU, etc.) are anticipated to decrease as small as $10{\mu}m/10{\mu}m$ in 2014. Since current etch-based circuit-patterning processes are not able to address the urgent requirement from industry, laser-based circuit patterning processes are under active research in which UV laser is used to engrave embedded circuits patterns into IC substrates. In this paper, we used a nanosecond UV laser to directly fabricate embedded circuit patterns into IC substrates with/without ceramic powders. In experiments, we engraved embedded circuit patterns with dimensions (width/depth) of abut $10{\mu}m/10{\mu}m$ and $6{\mu}m/6{\mu}m$ into the IC substrates. Due to the recoil pressure occurring during ablation, the circuit patterning of the IC substrates with ceramic powders showed the higher ablation rate.

• Journal of Practical Engineering Education
• /
• v.6 no.2
• /
• pp.105-110
• /
• 2014

In this work, mechanical characteristics of titanium diaphragm have been studied as a potential robust substrate and a diaphragm material for automotive tire pressure sensor. Lamination process techniques combined with traditional micromachining processes have been adopted as suitable fabrication technologies. To illustrate these principles, capacitive pressure sensors based on titanium diaphragm have been designed, fabricated and characterized. The fabrication process for micromachined titanium devices keeps the membrane and substrate being at the environment of 20 MPa pressure and $200^{\circ}C$ for a half hour and then subsequently cooled to $24^{\circ}C$. Each sensor uses a stainless steel substrate, a laminated titanium film as a suspended movable plate and a fixed, surface micromachined back electrode of electroplated nickel. The finite element method is adopted to investigate residual stresses formed in the process. Besides, out-of-plane deflections are calculated under pressures on the diaphragm. The sensitivity of the fabricated device is $9.45ppm\;kPa^{-1}$ with a net capacitance change of 0.18 pF over a range 0-210 kPa.