• 조명전기설비학회논문지
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• 제24권2호
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• pp.106-112
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• 2010

플라즈마 디스플레이 패널(Plasma Hsplay Panel :PDP)이 다른 평판 디스플레이 분야(Liquid Crystal Displays(LCDs) and organic light emitting diodes(OLEDs)등)와 경쟁에서 이기기 위해서는 제품의 고화질화, 저소비전력와 고속구동 등의 성능향상이 필요하다. 본 논문에서는 PDP의 성능향상을 위하여 유전체 보호층으로 쓰이는 MgO 박막에 Fe를 미량 첨가한 박막을 증착하고, 그 특성에 대하여 연구하였다. e-beam 증착법으로 증착된 Fe 도핑 된 MgO 박막의 표면특성과 전기광학적 특성을 4인치 테스트 패널을 제작하여 연구하였다. Fe가 도핑된 MgO 박막을 가지는 PDP는 Fe가 도핑되지 않은 PDP에 비해 낮은 방전전압 특성을 나타내었으며, 이는 박막에서 측정된 2차전자방출계수의 실험결과와 잘 일치되었다. 증착된 박막의 결정성과 표면 거칠기는 XRD 와 AFM 측정방법을 통하여 결정되었다. 또한, Fe가 도핑된 PDP는 고속구동을 위한 향상된 어드레스 방전 늦음의 특성을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.79-82
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• 2002

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ + ywt% MgO (x=0.10, 0.15, 0.20, y=0.0~3.0) ceramics were fabricated by the conventional solid-state reaction, and their structural and dielectric properties were investigated with variation of composition ratio and MgO doping content. A second phase, representative of MgO, appears in 3wt% MgO-doped BSCT specimens. Average grain sizes decreased with increasing amounts of MgO, and the BSCT(40/40/20) specimens doped with 3wt% MgO showed a value of $9.3{\mu}m$. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing MgO doping content and Ca composition ratio. The relative dielectric constant was non-linearly decreased as the field strength is increased. The tunability was increased with decreasing a Ca content and the BSCT(50/40/10) specimen doped with 1.0wt% MgO content showed the highest value of 6.4% at 5kV/cm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.5-6
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• 2006

Using the $(Ba_{0.5}Sr_{0.5}){TiO_3}$(BST) powders prepared by the Sol-Gel method, the EST thick films were fabricated on the ${Al_2}{O_3}$ substrates coated with Pt by the screen printing method. Compared with pure EST thick films, the structural and dielectric properties of the EST thick films doped with 1${\sim}$10 wt % MgO were investigated. It was observed that the Mg substitution into EST causes a shift in the cubic-tetragonal EST phase transition peak to a lower temperature. The microstructure of the EST substituted with Mg was homogeneous and dense. Mg substitution into EST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of EST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 158] and 1.4 % at 1 MHz.

• 한국광학회:학술대회논문집
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• 한국광학회 2004년도 제15회 정기총회 및 동계학술발표회
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• pp.330-331
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• 2004

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.373-379
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• 2013

Mg-doped zinc tin oxide (ZTO:Mg) thin films were prepared on glasses by rf magnetron sputtering. $O_2$ was introduced into the chamber during the sputtering. The optical properties of the films as a function of oxygen flow rate were studied. The crystal structure, elementary properties, and depth profiles of the films were investigated by X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), respectively. Bottom-gate transparent thin film transistors were fabricated on $N^+$ Si wafers, and the variation of mobility, threshold voltage etc. with the oxygen flow rate were observed.

• Progress in Superconductivity
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• 제12권1호
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• pp.36-40
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• 2010

We have studied the anisotropy of the London penetration depth of carbon doped $MgB_2$ single crystals, which was obtained from reversible magnetization measurements with the magnetic field both parallel and perpendicular to the c-axis. Similar to the pure $MgB_2$, the anisotropy of the upper critical field ${\gamma}_H$ decrease with temperature while the anisotropy of the London penetration depth ${\gamma}_{\lambda}$ slowly increases with temperature. However, the temperature dependence of ${\gamma}_H$ is drastically reduced and the value of ${\gamma}_{\lambda}$ becomes nearly ~1 as C is introduced. These results indicate that C substitution increases impurity scattering mainly in the $\sigma$ bands. The temperature dependence of the anisotropies agree well with the theoretical predictions with impurity scattering.

• Bulletin of the Korean Chemical Society
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• 제12권1호
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• pp.13-17
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• 1991

The preparation and characterization of semiconductive electrodes of MgO doped $Fe_2O_3$ were investigated. Pellets of MgO doped $Fe_2O_3$ were sintered at high temperatures between 1300$^{\circ}$C and 1400$^{\circ}$C and quenched rapidly in distilled water. The surfaces were analyzed by X-ray diffraction and scanning Auger electron spectroscopy. The surfaces of pellets contained both corundum structure ($Fe_2O_3$) and spinel structure ($Mg_xFe_{3-x}O_4$). Electrodes made of this material gave comparable anodic and cathodic photocurrents under illumination. The cathodic and anodic photocurrent on these photoelectrodes were verified high at 5-10 wt. percent that is critical doping amounts.

• 한국초전도ㆍ저온공학회논문지
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• 제18권1호
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• pp.1-5
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• 2016

Field and temperature dependence of the critical current density, Jc, were measured for both un-doped and carbon doped $MgB_2/Nb/Monel$ wires manufactured by Hyper Tech Research, Inc. In particular, carbon incorporation into the $MgB_2$ structure using malic acid additive and a chemical solution method can be advantageous because of the highly uniform mixing between the carbon and boron powders. At 4.2 K and 10 T, Jc was estimated to be $25,000-25,300Acm^{-2}$ for the wire sintered at $600^{\circ}C$ for 4 hours. The irreversibility field, $B_{irr}$, of the malic acid doped wire was approximately 21.0 - 21.8 T, as obtained from a linear extrapolation of the J-B characteristic. Interestingly enough, the Jc of the malic acid doped sample exceeds $10^5Acm^{-2}$ at 6 T and 4.2 K, which is comparable to that of commercial Nb-Ti wires.

• Progress in Superconductivity
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• 제10권2호
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• pp.79-86
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• 2009

We successfully fabricated C-doped ex-situ $MgB_2$ wires using two different methods such as mechanical alloying(MA) and combined process(CP) of in-situ and ex-situ. In the MA, the precursor powder was prepared with a mixture of $MgB_2$ and 1 at% C powders by planetary ball milling for 0-100 h. In the CP, on the other hand, C-doped $MgB_2$ powder was prepared with Mg, B, and C powders by in-situ process via compaction, sintering, and crushing. The powders prepared by two methods were loaded into Fe tube and then the assemblages were drawn by a conventional powder-in-tube technique. The MA treatment of C-added $MgB_2$ decreased the particles/grains size and resulted in C-doping into $MgB_2$ after sintering, improving the critical current density($J_c$) in high external magnetic field. For the C-doped $MgB_2$ wire by MA for 25 h, the $J_c$ was $4.1{\times}10^3A/cm^2$ at 5 K and 6.4 T, which was 5.9 times higher than that of pure and untreated $MgB_2$ wire. The CP also provided C-doping into $MgB_2$ and improved the $J_c$ in high magnetic field; the C-doped $MgB_2$ wire fabricated by CP exhibited a $J_c$ being 2.3 times higher than that of the ex-situ wire used commercial $MgB_2$ powder at 5 K and 6.0 T($2.7{\times}10^3A/cm^2\;vs.\;1.2{\times}10^3A/cm^2$).

• Nuclear Engineering and Technology
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• 제56권7호
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• pp.2711-2717
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• 2024

The current work aims to fabricate metal oxide-doped (PbO, Fe₂O₃, MgO, and Al₂O₃, each of which boasts a purity of 99%) zinc barium borate glasses through the melt quenching technique at the 1000 ℃ melting temperature. The results showed that adding 5 mol.% of metal oxides PbO, Fe₂O₃, Al₂O₃, and MgO increases the density of the zinc barium borate glasses. Additionally, the fabricated glasses' mechanical properties were determined based on the Makishima-Mackenzie model, which proved that the highest mechanical properties were achieved for glasses doped with Al₂O₃ compounds. The mechanical moduli for the glasses doped with Al₂O₃ reach 80.95 GPa (Young), 59.90 GPa (bulk), 31.75 GPa (shear), and 102.23 GPa (longitudinal). Additionally, the Al₂O₃-doped glasses' microhardness reaches 4.77 GPa. Moreover, estimation of the fabricated glasses' gamma-ray shielding capacity utilized Monte Carlo simulation. The highest linear attenuation coefficients are 29.132, 19.906, 19.243, and 18.923 cm^-1 obtained at 0.033 MeV for glasses dopped by PbO, Fe₂O₃, MgO, and Al₂O₃, respectively. Therefore, glasses doped with 5 mol.% of PbO have high gamma-ray shielding capacities followed by glasses doped by Fe₂O₃.