• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.145-149
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• 1995

The metallization is the key to determining cell costs, call performance, and cell and system reliabiltiy. The Burled Contact Solar Cell (BCSC) was specifical1y desinged to be compatible tilth low cost, mass production techniques and avoid the conventional metallization problem. By using electroless plating trchniqeu, we performed this metallization inexpensively and reliabley, This paper presents the details of the optimization procedure of metallization schemes on laser grooved cell surface Commercially available Ni ,Cu, and Ag plating solutions were applied for the cell metallization. The application of those solutions on the buried contact front metalization has resulted in an cell efficiency of 18.5% The cell parameters are an open circuit voltage of 651 mV, short circuit current density of 38.6 mA/$\textrm{cm}^2$, and fill factor of 73.5%.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.239-242
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• 2003

Optical module package is a hermetic metal-ceramic package for carrying optical IC. In case of LD(laser diode) module, window is used for both the path of optical signal and hermetic sealing of package. So, window has the metallization pattern on the surface for brazing process with package wall. In this study, several method were investigated for metallization. Thin film, thick film and mixed method were used for fabrication of metallization pattern. After brazing process, hermeticity and adhesion strength were tested for characterization of metallization pattern.

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.141-149
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• 2009

The Cu thin film material and process, which have been already used for metallization of CMOS(Complementary Metal Oxide Semiconductor), has been highlighted as the Cu metallization is introduced to the metallization process for giga - level memory devices. The recent progresses in the development of key elements in electrochemical processes like surface pretreatment or electrolyte composition are summarized in the paper, because the semiconductor metallization by electrochemical processes such as electrodeposition and electroless deposition controls the thickness of Cu film in a few nm scales. The technologies in electrodeposition and electroless deposition are described in the viewpoint of process compatibility between copper electrodeposition and damascene process, because a Cu metal line is fabricated from the Cu thin film. Silver metallization, which may be expected to be the next generation metallization material due to its lowest resistivity, is also introduced with its electrochemical fabrication methods.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.51-52
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.164-164
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• 1994

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.217-221
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• 2015

Developing a metallization that has low cost and high efficiency is essential in solar-cell industries, to replace expensive silver-based metallization. Ni/Cu two-step metallization is one way to reduce the cost of solar cells, because the price of copper is about 100 times less than that of silver. Alkaline electroless plating was used for depositing nickel seed layers on the front electrode area. Prior to the nickel deposition process, 2% HF solution was used to remove native oxide, which disturbs uniform nickel plating. In the subsequent step, a nickel sintering process was carried out in $N_2$ gas atmosphere; however, copper was plated by light-induced plating (LIP). Plated nickel has different properties under different bath conditions because nickel electroless plating is a completely chemical process. In this paper, plating bath conditions such as pH and temperature were varied, and the metal layer's structure was analyzed to investigate the adhesion of Ni/Cu metallization. Average adhesion values in the range of 0.2-0.49 N/mm were achieved for samples with no nickel sintering process.

• Fibers and Polymers
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• v.3 no.4
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• pp.147-152
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• 2002

Copper (II) salts are used as metallizing agents in the synthesis of new non-genotoxic direct dyes for cotton. Specifically, cotton fabric is dyed with non-genotoxic disazo direct dyes and then treated with copper salts. The complexes are characterized by neutron activation analysis, absorption spectrometry and standard Salmonella mammalian mutagenicity assay, and the after-treated fabrics are evaluated for lightfastness and washfastness. Direct dyes possessing ortho-propoxy and ortho'-hydroxy substituted systems formed the corresponding nonmutagenic 1:2 dye:metal complex and undergo significant improvement in lightfastness following metallization.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.227-230
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• 2008

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.1-7
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• 2020

The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.58-62
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• 2004

The shape evolution of the interface void of copper metallization for intergrated circuits under electromigration stress is modeled. A 2-dimensional finite-difference numerical method is employed for computing time evolution of the void shape driven by surface diffusion, and the electrostatic problem is solved by boundary element method. When the diffusion coefficient is isotropic, the numerical results agree well with the known case of wedge-shape void evolution. The numerical results for the anisotropic diffusion coefficient show that the initially circular void evolves to become a fatal slitlike shape when the electron wind force is large, while the shape becomes non-fatal and circular as the electron wind force decreases. The results indicate that the open circuit failure caused by slit-like void shape is far less probable to be observed for copper metallization under a normal electromigration stress condition.