Effect of anisotropic diffusion coefficient on the evolution of the interface void in copper metallization for integrated circuit |
Choy, J.H. (Department of Physic, Simon Fraser University) |
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Evaluation of electromigration and stressmigration reliabilities of copper interconnects by a simple pulsed-current stressing technique
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2 |
Morphological changes of a surface of revolution due to capillarityinduced surface diffusion
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DOI |
3 |
Reduced Cu interface diffusion by CoWP surface coating
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DOI |
4 |
Mechanisms for very long electromigration lifetime in dual-damascence Cu interconnections
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DOI ScienceOn |
5 |
Electromigration-driven shape evolution of two-dimensional voids
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DOI ScienceOn |
6 |
A physically based model of electromigration and stress-induced void formation in microelectronic interconnects
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DOI |
7 |
Activation energy for electromigration in Cu films
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DOI |
8 |
Electromigration-induced transgranular failure mechanisms in single-crystal aluminum interconnects
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DOI ScienceOn |
9 |
Slit morphology of electromigration induced open circuit failures in fime line conductors
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DOI |
10 |
Effect of microstructure on electromigration kinetics in Cu Lines
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DOI ScienceOn |
11 |
Computer simulation of void growth dynamics under the action of electromigration and capillary forces in narrow thin interconnets
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DOI ScienceOn |
12 |
Electromigration failure by shape change of voids in bamboo lines
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DOI ScienceOn |
13 |
Nonlinear stability analysis of the diffusional spheroidization of rods
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DOI ScienceOn |
14 |
Electromigration reliability issues in dual-damascence Cu interconnections
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DOI ScienceOn |
15 |
Influence of anisotropic surface diffusivity on electromigration induced void migration and evolution
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DOI ScienceOn |
16 |
Electromigration in integrated circuit conductors
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DOI ScienceOn |
17 |
Surface electromigration in copper interconnects
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DOI ScienceOn |
18 |
Electromigration instability: transgranular slits in interconnects
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DOI ScienceOn |
19 |
Fatal electromigration voids in narrow aluminum-copper interconnect
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DOI |
20 |
Large-electromigration-resistance coper interconnect technology for sub-halfmicron ULSI's
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21 |
Mechanism of electromigration failure in submicron Cu interconnects
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DOI ScienceOn |
22 |
Theoretical analysis of electromigration-induced failure of metallic thin films due to transgranular void propagation
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DOI ScienceOn |
23 |
Influence of anisotropic surface diffusivity on electromigration induced void migration and evolution
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DOI ScienceOn |