Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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High-temperature Semiconductor Bonding using Backside Metallization with Ag/Sn/Ag Sandwich Structure

Ag/Sn/Ag 샌드위치 구조를 갖는 Backside Metallization을 이용한 고온 반도체 접합 기술

  • Choi, Jinseok (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology) ;
  • An, Sung Jin (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology)
  • 최진석 (금오공과대학교 신소재공학과) ;
  • 안성진 (금오공과대학교 신소재공학과)
  • Received : 2019.11.29
  • Accepted : 2020.03.25
  • Published : 2020.03.30
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Abstract

The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).

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References

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