• The Journal of the Korea institute of electronic communication sciences
• /
• v.17 no.5
• /
• pp.775-782
• /
• 2022

In this paper, a novel small-diameter cylindrical post capacitor inserted into an evanescent-mode rectangular waveguide (EMRWG) is proposed for easier tuning. In order to feed the EMRWG, the proposed structure uses a single ridge rectangular waveguide with the same width and height as the waveguide at the input and output ends. The inserted post capacitor are made up a circular groove formed in the center of the lower part of the broad wall of the EMRWG, and a concentric cylindrical post inserted into the upper part. First, the equivalent circuit model for the proposed structure is presented. When the EMRWG and the single ridge waveguide are combined, the joint susceptance and the turns ratio of the ideal transformer are calculated by two simulations using HFSS (3d fullwave simulator, Ansoft Co.) respectively. The susceptance and resonance characteristics of the inserted post were analyzed by using the obtained parameters and the characteristics of the EMRWG. A 2-post filter with a center frequency of 4.5 GHz and a bandwidth of 170 MHz was designed using a WR-90 waveguide, and the simulation results by using the HFSS and CST, equivalent circuit model were in good agreement.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.10
• /
• pp.51-56
• /
• 2004

We propose and fabricate an 1${\times}$2 asymmetric optical switch by TOE using SOI wafer based on silicon which has very large TOE figure and it is a good material for optical devices. SOI wafer consists of 3 layers; upper Si layer for device(waveguide;core, n=3.5), buried oxide layer for insulator(clad, n=1.5) and Si substrate layer. We designed 1${\times}$2 asymmetric y-branched single mode optical waveguide switch by BPM simulation and metal heater by heat transfer simulation. Fabricated switch shows about 3.5 watts of power consumption and over 20dB of crosstalk between output channels.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.61 no.12
• /
• pp.1939-1943
• /
• 2012

In this paper we presented the detection of the explosive material RDX using a parallel plate waveguide (PPWG) THz time domain spectroscopy (TDS). Normally the explosive materials have been characterized through identification of vibrational fingerprint spectra. Until now, most of all THz spectroscopic measurements have been made using pellet samples where disorder effects contribute to line broadening such that individual resonances merge into relatively broad absorption features. In order to avoid such disadvantages we used the technique of PPWG THz-TDS to achieve sensitive characterization of explosive material RDX. The PPWG THz-TDS used in this work well established ultrafast optoelectronic techniques to generate and detect sub-picosecond THz pulses. The explosive material was analyzed as powder layers in $112{\mu}m$ gap of metal PPWG. The thin later mass was estimated to be about $700{\mu}g$. Finally, we showed spectra of explosives from 0.2 to 2.4 THz measured using PPWG THz-TDS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.13-16
• /
• 2004

The reliability of 1.550m-wavelength InGaAs mesa waveguide photodiodes(WGPDs), which developed for 40-Gbps optical receiver applications, fabricated by metal organic chemical vapor deposition is investigated. Reliability is examined by both high-temperature storage tests and the accelerated life tests by monitoring dark current and breakdown voltage. The median device lifetime and the activation energy of the degradation mechanism are computed for WGPD test structures. From the accelerated life test results, the activation energy of the degradation mechanism and median lifetime of these devices in room temperature are extracted from the log-normal failure model by using average lifetime and the standard deviation of that lifetime in each test temperature. It is found that the WGPD structure yields devices with the median lifetime of much longer than $10^6$ h at practical use conditions. Consequently, this WGPD structure has sufficient characteristics for practical 40-Gbps optical receiver modules.

• Korean Journal of Optics and Photonics
• /
• v.14 no.3
• /
• pp.327-330
• /
• 2003

We present the fabrication and measured performance of a wavelength tunable Butt coupled DBR-LD. An average coupling efficiency between active layer and passive waveguide layer was measured over 85％per facet, and the average threshold current was 21 ㎃ for the waveguide integrated DBR laser. High output power of Butt coupled DBR-LD was obtained over 25 ㎽. As high as 25 ㎽ of output power was achieved by the butt coupled method. The maximum wavelength tuning range is about 7.4 nm, and the side mode suppression ratio was more than 40 ㏈ using 1.3 ${\mu}{\textrm}{m}$ InGaAsP waveguide layer.

• Korean Journal of Optics and Photonics
• /
• v.22 no.6
• /
• pp.269-275
• /
• 2011

We propose a metal-dielectric hybrid waveguide structure consisting of a single metal nanowire placed on a flat dielectric slab. Mode size and propagation loss of the surface-plasmons confined in the metal-dielectric gap are compared with those of the complementary structure with a dielectric nanowire on a metal surface. In the case of the nanowire's diameter much smaller than the wavelength the two structures reveal quite different characteristics; the dielectric nanowire-on-metal has longer propagation distance, but only the metal nanowire-on-dielectric exhibits a mode size two fold smaller than the diffraction limit. The proposed hybrid structure may therefore be more suitable for realization of nanocavity lasers.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.12
• /
• pp.173-183
• /
• 1995

Blue light of 0.15mW at 417.6nm is generated in a quasi-phase-matched LITaO$_{3}$ optical waveguide. A new heat-treatment technique using a metal-oxide mask is proposed to fabricate the periodic domain-inverted grating with less degraded optical properties. The mask promotes the proton indiffusion by inhibition of the proton outdiffusion during the heat treatment. It reduces the amount of the initial proton exchange for the domain inversion and prevents the formation of crystal defects on the surface accompanied by the proton outdiffusion. Consequently, it minimizes the degradation of nonlinear coefficient and scattering loss caused by the initial proton exchange.

• Korean Journal of Optics and Photonics
• /
• v.35 no.4
• /
• pp.175-183
• /
• 2024

Research into optical signal processing using photonic integrated circuits (PICs) has been actively pursued in various fields, including optical communication, optical sensors, and quantum optics. Among the materials used in PIC fabrication, polymers have attracted significant interest due to their unique characteristics. To fabricate polymer-based PICs, establishing an accurate manufacturing process for the cross-sectional structure of an optical waveguide is crucial. For stable device performance and high yield in mass production, a process with high reproducibility and a wide tolerance for variation is necessary. This study proposes an efficient method for fabricating polymer optical-waveguide devices by introducing the atomic layer deposition (ALD) process. Compared to conventional photoresist or metal-film deposition methods, the ALD process enables more precise fabrication of the optical waveguide's core structure. Polyimide optical waveguides with a core size of 1.8 × 1.6 ㎛² are fabricated using the ALD process, and their propagation losses are measured. Additionally, a multimode interference (MMI) optical-waveguide power-splitter device is fabricated and characterized. Throughout the fabrication, no cracking issues are observed in the etching-mask layer, the vertical profiles of the waveguide patterns are excellent, and the propagation loss is below 1.5 dB/cm. These results confirm that the ALD process is a suitable method for the mass production of high-quality polymer photonic devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.29 no.2
• /
• pp.77-82
• /
• 2018

Electromagnetic wave transmission through periodic metal-insulator-metal(MIM) waveguides as a function of plate thickness has not been extensively studied at various terahertz frequencies. In this paper, we investigate the transmittances through gold MIM slits when a normally incident wave with parallel polarization is considered at several terahertz frequencies. In addition, the results are compared to the case of a perfect electric conductor, and the differences are discussed.

• Korean Journal of Optics and Photonics
• /
• v.18 no.1
• /
• pp.50-55
• /
• 2007

Using the Selective Area Growth (SAG) technology of Metal Organic Chemical Vapor Deposition (MOCVD), we successfully integrated an active device and passive devices on the same substrate. In other words, we integrated a Semiconductor Optical Amplifier (SOA) as an active device and an S-bend waveguide and a Multi Mode Interference (MMI) waveguide as passive devices. The SOA is successfully integrated with passive devices on the same substrate. The Cross-Gain Modulation (XGM) characteristic of the integrated SOA and the loss of an MMI and an S-bend waveguide were measured. Measured XGM characteristics of the SOA showed an extinction ratio of 8.82 dB. The total loss of the MMI and S-bend waveguide was 18 dB.