• International Journal of Internet, Broadcasting and Communication
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• v.7 no.2
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• pp.161-167
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• 2015

The performance of high power LEDs highly depends on the junction temperature. Operating at high junction temperature causes elevation of the overall thermal resistance which causes degradation of light intensity and lifetime. Thus, appropriate thermal management is critical for LED packaging. The main goal of this research is to improve thermal resistance by optimizing and comparing nano-pore silicon-based thermal substrate to insulated metal substrate and direct bonded copper thermal substrate. The thermal resistance of the packages are evaluated using computation fluid dynamic approach for 1 W single chip LED module.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.332-342
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• 1995

The important factors of reaction conditions in sol-gel transition of silicon alkoxide solution have been reviewed and discussed on the basis of Raman study. Various factors such as type of catalyst, alkoxide, solvent, drying control chemical additive and water content affect the conversion mechanism in sol-gel process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.51.1-51.1
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• 2010

$Y_2O_3$ $Er_2O_3$ and $Nd_2O_3$ doped polycrystalline silicon nitride were prepared by hot pressed sintering at $1850^{\circ}C$ and their optical transmittance were investigated in visible and in infrared region. Mechanical and tribological properties were also investigated. Grain growth in silicon nitride was reduced with addition of $Y_2O_3$ and $Nd_2O_3$. 1 wt.% of each rare earth metal were sintered with 3 wt.% MgO, 9wt.% AlN and 87 wt.% of ${\alpha}-Si_3N_4$. Adding these rare earth metal oxides shows good mechanical properties as high strength and toughness and also shows low friction coefficient.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.6
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• pp.855-859
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• 2012

Silicon nanowires (SiNWs) were fabricated by a metal-assisted chemical etching of Si and the porous structure on their surfaces was controlled by changing the volume ratio of the etching solution composed of hydrofluoric acid, hydrogen peroxide, and deionized water. The concentration of hydrogen peroxide as the oxidant was varied for controlling the porosity of SiNWs. The optical properties of porous SiNWs were unique and very different from those of single-crystalline Si, as characterized by measuring their photoluminescence and Raman spectra for different porosities.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.252-254
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• 2002

Metal oxides with high dielectric constants have the potential to expend scaling of transistor gate capacitance beyond that of ultrathin silicon dioxide. However, during deposition of most metal oxides on silicon, an interfacial region of SiOx is formed and limits the specific capacitance of the gate structure. We deposisted aluminum oxide and examined the composition of the interfacial layer by employing high-resolution X-ray photoelectron spectroscopy and X-ray reflectivity. We find that the interfacial region is not pure SiO$_2$, but is composed of a complex depth-dependent ternary oxide of $AlSi_xO_y$ and the pure SiO$_2$.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.507-510
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• 2008

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.344-349
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• 2020

Modern thin film deposition processes require high deposition rates, low costs, and high-quality films. Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) meets these requirements. AP-PECVD causes little damage on thin film deposition surfaces compared to conventional PECVD. Moreover, a higher deposition rate is expected due to the surface heating effect of atomic hydrogens in AP-PECVD. In this study, polycrystalline silicon thin film was deposited at a low temperature of 100℃ and then AP-PECVD experiments were performed with various plasma powers and hydrogen gas flow rates. A deposition rate of 15.2 nm/s was obtained at the VHF power of 400 W. In addition, a metal foam showerhead was employed for uniform gas supply, which provided a significant improvement in the thickness uniformity.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.61-64
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• 2015

In solar industry, numerous researchers reported about cold spray method among various electrode formation technic, but there are no known a bonding mechanism of metal powder. In this study, a cross-section of copper electrode formed by cold spray method was observed and heterogeneous phase between silicon substrate and copper electrode was analyzed using morphology observation technic. SEM and TEM analysis were performed to analyze a crystallinity and distribution shape of heterogeneous copper phase. Molecular dynamics simulation was performed to calculate glass transition temperature of copper metal. In the result, amorphous copper phase was observed near interface between silicon substrate and metal electrode. The results of the molecular dynamics simulation show that an amorphous copper phase could be formed at a temperature below the melting point of copper because cold spraying resulted in a lower glass transition temperature.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.199-204
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• 1999

As the engine design change to get high efficiency and performance of commercial diesel engine, surface wear of the cam follower becomes an important issues as applied load increasing at the contact face between cam follower and cam. Purpose of this study is the developing of the ceramic cam follower made of silicon nitride ceramic which is more wear resistant than the cast iron and sintered cam follower. Ceramic cam follower was made by direct brazing of thin ceramic disk to steel can follower body using active bracing alloy. Effect of joining condition on the interfacial phases and joining strength wer examined at bvarious joining temperatures, times, and cooling rates. Crowning resulted from the difference of thermal expansion coefficient after direct brazing without using any stress-relieving inter layer was measured. Interfacial phases are mainly titanium silicide and titanium nitride which are the products between active metal(Ti) in brazing alloy and silicon nitiride. Maximum joining strength of the ceramic metal joint, measured by DBS method, was 334MPa. Crowning(R) of the prototype ceramic cam follower was 1595mm. As machining for crowning is not necessary, production cost can be reduced.

• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.212-216
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• 1997

A new metal tip fabrication process for low voltage operation is reported in this paper. The key element of the fabrication process is that isotropic silicon etching and oxidation process used in silicon tip fabrication is utilized for gate hole size reduction and gate oxide layer. A metal FEA with 625 tips was fabricated in order to demonstrate the validity of the new process and submicron gate apertures were successfully obtained from originally 1.7$\mu\textrm{m}$ diameter mask. The emission current above noise level was observed at the gate bias of 50V. The required gate voltage to obtain the anode current of 0.1${\mu}\textrm{A}$/tip was 74V and the emission current was stable above 2${\mu}\textrm{A}$/tip without any disruption. The local field conversion factor and the emitting area were calculated as 7.981${\times}$10\ulcornercm\ulcorner and 3.2${\times}$10\ulcorner$\textrm{cm}^2$/tip, respectively.