• Journal of the Korean Society of Radiology
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• v.13 no.7
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• pp.925-932
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• 2019

In this paper, we developed optical dosimetry system with a plastic scintillator, a commercial 50 mm, f1.8 lens, and a commercial high-sensitivity CMOS (complementary metal-oxide semiconductor) camera. And, the correction processors of vignetting, geometrical distortion and scaling were established. Using the developed system, we can measured a percent depth dose, a beam profile and a dose linearity for 6 MV medical LINAC (Linear Accelerator). As results, the optically measured percent depth dose was well matched with the measured percent depth dose by ion-chamber within 2% tolerance. And the determined flatness was 2.8%. We concluded that the optical dosimetry system was sufficient for application of absorbed dose monitoring during radiation therapy.

• Journal of Sensor Science and Technology
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• v.26 no.3
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• pp.155-159
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• 2017

The analog-to-digital converter (ADC) is an important component in various fields of sensor signal processing. This paper presents an expandable flash analog-to-digital converter (E-flash ADC) for sensor signal processing using a comparator, a subtractor, and a multiplexer (MUX). The E-flash ADC was simulated and designed in $0.35-{\mu}m$ standard complementary metal-oxide semiconductor (CMOS) technology. For operating the E-flash ADC, input voltage is supplied to the inputs of the comparator and subtractor. When the input voltage is lower than the reference voltage, it is outputted through the MUX in its original form. When it is higher than the reference voltage, the reference voltage is subtracted from the input value and the resulting voltage is outputted through the MUX. Operation of the MUX is determined by the output of the comparator. Further, the output of the comparator is a digital code. The E-flash ADC can be expanded easily.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.662-662
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• 2013

Over the last several decades, innovative light-harvesting devices have evolved to achieve high efficiency in solar energy transfer. Research on the mechanisms for plasmon resonance is very desirable to overcome the conventional efficiency limits of photovoltaics. The influence of localized surface plasmon resonance on hot electron flow at a metal-semiconductor interface was observed with a Schottky diode composed of a thin silver layer on $TiO_2$. The photocurrent is generated by absorption of photons when electrons have enough energy to travel over the Schottky barrier and into the titanium oxide conduction band. The correlation between the hot electrons and the surface plasmon is confirmed by matching the range of peaks between the incident photons to current conversion efficiency (IPCE, flux of collected electrons per flux of incident photons) and UV-Vis spectra. The photocurrent measured on Ag/$TiO_2$ exhibited surface plasmon peaks; whereas, in contrast to the Au/$TiO_2$, a continuous Au thin film doesn't exhibit surface plasmon peaks. We modified the thickness and morphology of a continuous Ag layer by electron beam evaporation deposition and heating under gas conditions and found that the morphological change and thickness of the Ag film are key factors in controlling the peak position of light absorption.

• Proceedings of the KIEE Conference
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• 2007.10c
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• pp.28-30
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• 2007

Need analysis of correct thrust for control performance improvement of HB-LPM (Hybrid type Linear Pulse Motor). It is difficult to analyze HB-LPM's thrust. In this paper, HB-LPM's thrust is expressed to mathematical expression. And it is proved validity of this numerical formula by thrust measurement system. Two phase driver is composed. It is verified validity of numerical formula that measure waveform of electric current and voltage that is supplied in each Phase. In this study, composed two phase drive driver, advantage of this IGBT element 6 by accumulated IPM module 1 Driver composition possible. That is, can economize 1 module. In other words, Driver composition is available by IGBT or metal oxide semiconductor field effect transistor element 4. This is economical big gains.

• Journal of Electrical Engineering and Technology
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• v.12 no.4
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• pp.1619-1626
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• 2017

Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1284-1287
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• 2007

Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.36 no.1
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• pp.1-8
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• 2004

One of the most frequently used method for measurement of the degree of sizing (viz., hydrophobicity) is the Stockigt test. However, the Stockigt test was influenced by various factors such as dropping height, dropping amount, dropping speed and viewing angle. The resultant data of the sizing degree on the same specimen also varied according to different testers. Thus, the Stockigt test should be modified to be regarded as a highly reliable and reproducible standard method. For modifying the Stockigt test, it was required to quantify red coloration by reaction between 1％ ferric chloride and 2％ ammonium thiocyante during Stockigt testing. The cameras capturing the serial images during the red coloration process were the CMOS (Complementary Metal Oxide Semiconductor)-type and CCD (Charge Coupled Device)-type cameras. For measurement based on KS M 7025, the CCD-type camera must be used due to its high resolution, and on the other hand, for measurement based on Tappi Useful Method 429, the CMOS-type camera may be used owing to its low resolution. It was needed to covert the RGB values of a droplet image into HSV(Hue, Saturation, and Value) values because the human eyes are much closer to HSV than RGB. Among HSV values, the Hue value was accepted as the most reliable index consistent with the red coloration process by excluding the surrounding conditions such as light, tester's movement etc.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.71-78
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• 2012

This paper describes trends in conventional scaling compared with advanced technologies such as 3D integration (3DI) and bumpless through-silicon via (TSV) processes, as well as the characteristics of CMOS (Complementary Metal Oxide Semiconductor) Logic device after thinning the wafers to less than $10{\mu}m$. Each module process including thinning, stacking, and TSV, is optimized for 3D Wafer-on-Wafer (WOW) application. Optimization results are discussed with valuable data in detail. Since vertical wiring of bumpless TSV can be connected directly to the upper and lower substrates by self-alignment, bumps are not necessary when TSV interconnects are used.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1208-1211
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• 2008

We study the amorphous In-Ga-Zn-O thin-film transistors (TFTs) properties under monochromatic illumination ($\lambda=420nm$) with different intensity. TFT off-state drain current ($I_{DS_off}$) was found to increase with the light intensity while field effect mobility ($\mu_{eff}$) is almost unchanged; only small change was observed for sub-threshold swing (S). Due to photo-generated charge trapping, a negative threshold voltage ($V_{th}$) shift is also observed. The photofield-effect analysis suggests a highly efficient UV photocurrent conversion in a-IGZO TFT. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order lower than reported value for a-Si:H, which can explain a good switching properties of the a-IGZO TFTs.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.470-473
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• 2000

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased patting density. The devices are scaled down day by day. Therefore, This paper investigates how MOSFET structures influence on transport properties in according to change of channel length and bias and, observes impact ionization between the drain and the gate. This paper proposes three models, i.e., conventional MOSFET, LDD MOSFET and EPI MOSFET. The gate lengths are 0.3$\mu\textrm{m}$ 0.15$\mu\textrm{m}$, 0.075$\mu\textrm{m}$ and scaling factor is λ = 2. We have presented MOSFET's characteristics such as I-V characteristic, impart ionization, electric field, using the TCAD. We have analyzed the adaptive channel and doping influences