• Proceedings of the KIEE Conference
• /
• 2003.11b
• /
• pp.275-278
• /
• 2003

This paper presents a full-adder using current-mode multiple valued logic CMOS circuits. This paper compares propagation delay, power consumption, and PDP(Power Delay Product) compared with conventional circuit. This circuit is designed with a samsung 0.35um n-well 2-poly 3-metal CMOS technology. Designed circuits are simulated and verified by HSPICE. Proposed full-adder has 2.25 ns of propagation delay and 0.21 mW of power consumption.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.1
• /
• pp.13-16
• /
• 2000

Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.5
• /
• pp.350-355
• /
• 2000

The fabrication of sapphire wafer in C plane has been developed by horizontal Bridgeman method and GaN based semiconductor epitaxial growth has been carried out in metal organic chemical vapour deposition. The single crystalline ingot of sapphire has been utilized for 2 inch sapphire wafers and wafer slicing and lapping machines were designed. These several steps of lapping processes provided the mirror-like surface of sapphire wafer. The measurements of the surface flatness and the roughness were carried out by the atomic force microscope. The GaN thin film growth on the developed wafer was confirmed the wafer quality and applicability to blue light emitting devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.174-174
• /
• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

• The Journal of Korean Academy of Prosthodontics
• /
• v.36 no.6
• /
• pp.858-866
• /
• 1998

Soldering is the usual method used to correct an unstable fixed partial denture framework at patient's try-in; However, presoldering base metal alloys is technique-sensitve and results are unstable because it is difficult to maintain uniform heat distribution and to prevent oxidation of an alloy. A cast-joining technique has been developed by Weiss and Munyon for repair, correction and addition to base metal framework. This joining technique eliminates the problem with presoldering of non-precious frameworks. The object of this study was to 1) compare the relative flexure strength and the joining effectiveness of Ni-Cr-Be cast in two pieces and 'pre-soldered' versus in two pieces and 'cast-joined'. 2) determine the effect of increasing the number of retentive grooves on the face of the cast and 3) determine the effect of the relative matched position of groove patterns on flexure strength. The joining effectiveness can be expressed by the ratio of the mean flexure stress of soldered or cast-joined specimens to that of one-piece cast. Resin rods 3mm in diameter were used as pattern of specimens for one-piece casted, presoldered, and cast-joined groups. Cast-joined specimens had two different patterns of retentive grooves on the joined faces. Type A had cross-shaped grooves 1mm in depth. 0.6mm in width. Type B was the same except for the addition of one more retentive groove. In the experiment connecting cast-joined specimens, half of specimens with type A pattern had their patterns on the faces of paired casts matched with each other as mirror image. With the rest pairs, it was proceeded that one of paired casts turned 45 degrees so that the patterns crossed. Half of specimens with type B pattern also had the patterns matched as mirror image; However, here, one of paired casts turned 90 degrees with the other pairs. Retentive groove in this study lacked the intentional undercuts, in contrast with the suggestion of Weiss and Munyon. The specimens were subjected to four-point flexural loading in an Instron testing machine. The midspan flexural stress was calculated at the point of initial plastic strain as determined from a strip-chart recorder or at the point of failure if this occured at a lower stress level. Within the scope of this study, the following results were obtained. 1. The presoldered group showed flexural strength at least 2 times higher than the cast-joined groups. Its joining effectiveness was 82%. 2. In cast-joined groups, the flexural strength of joints with type B patterns exhibited 1.5 times that of joints with type A patterns. Joining effectivenesses were 38% for type B patterns, 25-26% for type A patterns. 3. The relative matched position of groove patterns did not have any significant effect on flexural strength of the cast-joined specimens with either type A patterns or type B patterns(p>.05).

• The Journal of Korean Academy of Prosthodontics
• /
• v.37 no.4
• /
• pp.474-493
• /
• 1999

According to repeated measurements and correction procedures, the accuracy of the phase-shifting profilometry was developed. At first, after 20 final models for maxillary complete denture were duplicated , the mucosa sur-faces of models were measured with the phase-shifting proflometry and each mirror view of these was calibrated. Maxillary casts were divided into 4 groups of 5 casts per each, and wax dentures with 2 sheets of baseplate wax and artificial teeth were made and then cured according to the curing method of each group. Group I ; quick curing with QC-20 acrylic resin Group II ; 9 hour curing with QC-20 acrylic resin Group III ; SR-Ivocap system Group IV ; metal base and quick curing with QC-20 acrylic resin. After curing, polishing, and storing at $37^{\circ}C$ in saline for 30 days, the forms of the impression surface of the dentures were measured with the phase-shifting profilometry. Then, the impression surface form of each denture was placed in the optimal position of com-parison with the mirror view of the same final cast. The amount and direction of distortion of each denture was analyzed and the effects of polishing and storage in each denture were compared, The obtained results were as follows : 1. In Group I, the denture was observed as the appearance distorted in the opposite direction of the mucosa and the postero-lateral part of palatal portion of the denture was observed as the appearance separated from the mucosa. Also, the buccal flanges of the denture were observed as the appearance distorted in the direction of the mucosa. 2. In Group II, the postero-lateral part of palatal portion of the denture was observed as the appearance separated slightly from the mucosa. The bilateral buccal flanges of denture were observed as the appearance distorted severely in the direction of the mucosa. 3. In Group III the bilateral part of the residual ridge crest portions and the buccal flanges of the denture were observed as the appearance distorted in the direction of the mucosa, and specially, the buccal flanges of the maxillary tuberosities were distorted severely. 4. In Group IV, the acrylic resin base of the buccal portion of the denture was observed as the appearance distorted in the opposite direction of the mucosa. 5. The phase-shifting profilometry, done with repeated measurements and correction procedures, was effective in comparing the amount and direction of distortion at every position after the laboratory work and the delivery of maxillary complete denture.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.16 no.10
• /
• pp.1861-1868
• /
• 1992

Laser beam hardening of 12%-Cr steel has been evaluated by using a continuous wave 3kW co$_{2}$ laser with a hardening mirror set. Experiment was performed on the hardening condition with a laser power of 2.85kW and travel speed of 1.0 and 1.5m/min. Multi passes have been also tried to find the hardening characteristics of partly overlapped zone. The black paint to use at high temperature was adopted to increase the absorptivity of laser beam energy with the wavelength of 10.6.mu.m at the surface of base metal. The microstructure of the hardened layers was observed by using a light microscopy, SEM and TEM. A fine Lamellar martensite formed in the hardened zones exhibits very high Vickers microhardness of 600Hv, whereas the tempered martensite distributes in the base metal with Vickers microhardness of 240Hv.It has been found that laser hardening with multi passes showed no significant drop of the hardness between adjacent passes.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.3
• /
• pp.67-71
• /
• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.12 no.6
• /
• pp.10-16
• /
• 2013

Ultra-fine planing and micro punching are separately used for improving surface roughness and machining dot patterns, respectively, of metal molds. If these separate machining processes are applied for machining of identical molds, there could be an aligning mismatch between the machine tool and the mold. A hybrid machining system combining ultra-fine planing and micro punching was newly developed in this study in order to solve this mismatch; hybrid process technology was also developed for machining dot patterns on a mirror surface of a metal mold. The hybrid machining system has X, Y, and Z axes, and a cam axis for ultra-fine planing. The cam axis and attachable and removable solenoid actuators for micro punching can make large and small sizes of dot patterns, respectively. Ultra-fine planing was applied in the first place to improve the surface roughness of a metal mold; the measured surface roughness was about 20nm. Then, micro punching was applied to machine dot patterns on the same mold. It was possible to control the diameter of the dot patterns by changing the input voltage of the solenoid actuator. Before machining, severe inhomogeneous plastic deformation around the machined dot patterns was also removed by annealing heat treatment. Therefore, it was verified that metal molds with dots patterns for optical products can be machined using a hybrid machining system and the hybrid process technology developed in this study.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.1
• /
• pp.47-52
• /
• 2004

This paper presents a CMOS optical receiver design featuring wide input dynamic range and low bit error rate suitable for FTTH application. We achieved 60dB input dynamic range for up to 100Mbps by controlling the PMOS feedback resistance of transimpedance preamplifier according to its output signal level. Auto-bias circuit is designed in current mirror configuration to minimize duty error. Circuit simulation has been performed using 2-poly, 3-metal, 0.6um CMOS process parameters. The designed receiver consumes less than 130mW at 100Mbps with 5V power supply.