• Title/Summary/Keyword: Metal Oxide

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Color variation of copper glaze with the addition of tin oxide (산화주석 첨가에 따른 동화유약의 발색 변화)

  • No, Hyunggoo;Kim, Soomin;Kim, Ungsoo;Cho, Wooseok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.27 no.5
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    • pp.243-248
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    • 2017
  • In this study copper glaze samples were prepared with varying amount of tin oxide, and the chromatic characteristics of glazes were explained on the results of spectrophotometric, crystalline phase, and microstructural analyses. The red color of copper glaze was dissipated with the addition of tin oxide and turned into achromatic color due to the decrease of CIEab values. Tin oxide homogeneously distributed in the glaze layer interfered with the red color generation coming from the growth of Cu nuclei, and formed an alloy with metal copper around bubbles. This resulted in the decrease of metal copper peak intensity with minor $Cu_2O$ peak. With the 3.79 % tin oxide addition the glaze was appeared as gray due to the black color CuO and Cassiterite $SnO_2$ phases.

A study on interfacial characteristics of Ni-Cr alloy by Nb content for Porcelain Fused to Metal Crown (금속소부도재관용 Ni-Cr 합금에 첨가된 Nb이 계면특성에 미치는 영향)

  • Kim, Chi-Young;Choi, Sung-Min
    • Journal of Technologic Dentistry
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    • v.27 no.1
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    • pp.97-104
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    • 2005
  • The effect of Nb on interfacial bonding characteristics of Ni-Cr alloy for porcelain fused to metal crown (PFM) has been studied in order to investigate oxide layer. A specimens, which is 0.8mm in thickness, were fired at 1,000$^{\circ}C$ with four tests such as air, vacuum, air for 5 minutes and vacuum for 5 minutes in order to examine an oxide behavior of alloy surface generated by the adding of Nb to be controlled at a rate of 0, 1, 3 and 5. It observed oxide film form of the fired specimens with optical microscope and scanning electron microscope (SEM), and chemical formation of them with energy disperse X-ray spectroscopy (EDX). The other specimens, which is 2mm in thickness, were fired at 1,000$^{\circ}C$ with air and vacuum in order to analyze the diffusion behaviors of alloy-porcelain interface by X-ray dot mapping. The results of this study were as follows: 1. The observation of microstructure of specimens by SEM showed that the more Nb content is high, the more much intermediate compound of rich Nb is observed. 2. The surface morphology of oxide film is most dense in 3% Nb. The heat treatment in air constitutes denser oxide film than heat treatment under vacuum. 3. The diffusion behavior of oxide layer by X-ray dot mapping showed that Si, Al of porcelain diffuse toward metal.

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V2O5 Embedded All Transparent Metal Oxide Photoelectric Device (V2O5 기반의 금속 산화물 투명 광전소자)

  • Kim, Sangyun;Choi, Yourim;Lee, Gyeong-Nam;Kim, Joondong
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.6
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    • pp.789-793
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    • 2018
  • All transparent metal oxide photoelectric device based on $V_2O_5$ was fabricated with structure of $V_2O_5/ZnO/ITO$ by magnetron sputtering system. $V_2O_5$ was deposited by reactive sputtering system with 4 inch vanadium target (purity 99.99%). In order to achieve p-n junction, p-type $V_2O_5$ was deposited onto the n-type ZnO layer. The ITO (indium tin oxide) was applied as the electron transporting layer for effective collection of the photo-induced electrons. Electrical and optical properties were analyzed. The Mott-Schottky analysis was applied to investigate the energy band diagram through the metal oxide layers. The $V_2O_5/ZnO/ITO$ photoelectric device has a rectifying ratio of 99.25 and photoresponse ratios of 1.6, 4.88 and 2.68 under different wavelength light illumination of 455 nm, 560 nm and 740 nm. Superior optical properties were realized with the high transmittance of average 70 % for visible light range. Transparent $V_2O_5$ layer absorbs the short wavelength light efficiently while passing the visible light. This research may provide a route for all-transparent photoelectric devices based on the adoption of the emerging p-type $V_2O_5$ metal oxide layer.

Hydrogen Gas Sensor Performance of a p-CuO/n-ZnO Thin-film Heterojunction (p-CuO/n-ZnO 이종접합 박막 구조의 수소 가스 특성 평가)

  • Yang, Yijun;Maeng, Bohee;Jung, Dong Geon;Lee, Junyeop;Kim, Yeongsam;An, Hee Kyung;Jung, Daewoong
    • Journal of Sensor Science and Technology
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    • v.31 no.5
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    • pp.337-342
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    • 2022
  • Hydrogen (H2) gas is widely preferred for use as a renewable energy source owing to its characteristics such as environmental friendliness and a high energy density. However, H2 can easily reverse or explode due to minor external factors. Therefore, H2 gas monitoring is crucial, especially when the H2 concentration is close to the lower explosive limit. In this study, metal oxide materials and their p-n heterojunctions were synthesized by a hydrothermal-assisted dip-coating method. The synthesized thin films were used as sensing materials for H2 gas. When the H2 concentration was varied, all metal oxide materials exhibited different gas sensitivities. The performance of the metal oxide gas sensor was analyzed to identify parameters that could improve the performance, such as the choice of the metal oxide material, effect of the p-n heterojunctions, and operating temperature conditions of the gas sensor. The experimental results demonstrated that a CuO/ZnO gas sensor with a p-n heterojunction exhibited a high sensitivity and fast response time (134.9% and 8 s, respectively) to 5% H2 gas at an operating temperature of 300℃.

Characterization of ultrathin ONO stacked dielectric layers for NVSM (NVSM용 초박막 ONO 적층 유전층의 특성)

  • 이상은;김선주;서광열
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.3
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    • pp.424-430
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    • 1998
  • Film characteristics of thin ONO dielectric layers for MONOS (metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by AES, SIMS, TEM and AFM. The ONO films with different dimension of tunneling oxide, nitride, and blocking oxide were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$(blocking oxide)/O-rich SiOxNy (interface)/ N-rich SiOxNy(nitride)/O-rich SiOxNy(tunneling oxide). In addition, the SiON phase is distributed mainly near the tunneling oxide/nitride and nitride/blocking oxide interfaces, and the $Si_2NO$ phase is distributed mainly at nitride side of each interfaces and in tunneling oxide.

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Electrochemical Characteristics of Ruthenium Oxide Electrode-Organic Electrolyte System (유기전해액에서 루테늄산화물 전극의 전기화학적 특성)

  • Doh, Chil-Hoon;Choi, Sang-Jin;Moon, Seong-In;Yun, Mun-Soo;Yug, Gyeong-Chang;Kim, Sang-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.1125-1128
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    • 2002
  • Electrochemical capacitor made with metal oxide electrode uses rapid and reversible protonation/deprotonation of metal oxide material under the aqueous acidic solution, generally. Electrochemical stability window of aqueous electrolyte-type capacitor is narrow compared to that of organic electrolyte-type capacitor. Electrochemical characteristics of electrochemical capacitor made with metal oxide electrode and lithium cation based organic electrolyte were evaluated. Electrochemical capacitor based on $RuO_2$ electrode material and 1M $LiPF_6$ in mixed solvents of EC, DEC, and EMC has anodic and cathodic specific capacitance of 145 and 142 F/g-$RuO_2{\cdot}nH_2O$, respectively, by using cyclic voltammetry with scan rate of 2 mV/sec g-$RuO_2$ in potential range of 2.0~4.2V(Li|$Li^+$).

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금속 공간층의 깊이에 따른 Metal-oxide-nitride-oxide-silicon 플래시 메모리 소자의 전기적 특성

  • Lee, Sang-Hyeon;Kim, Gyeong-Won;Yu, Ju-Hyeong;Kim, Tae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.228-228
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    • 2011
  • 낮은 공정비용과 높은 집적도를 가지는 플래시 메모리 소자에 대한 휴대용기기에 응용가능성때문에 연구가 필요하다. 플래시 메모리 중에서도 질화막에 전하를 저장하는 전하 포획 플래시 메모리 소자는 기존의 부유 게이트 플래시 메모리 소자에 비해 공정의 단순하고 비례축소에 용이하며 인접 셀 간의 간섭에 강하다는 장점으로 많은 관심을 갖게 되었다. 소자의 크기가 작아짐에 따라 전하 포획 플래시 메모리 소자 역시 인접 셀 간의 간섭현상과 단채널 효과가 문제를 해결할 필요가 있다. 본 연구에서는 인접 셀 간의 간섭을 최소화 시키기 위하여 metal-oxide-nitride-oxide-silicon (MONOS) 플래시 메모리 소자에 bit-line 방향으로 금속 공간층을 삽입할 구조를 사용하였으며 금속 공간층의 깊이에 따른 전기적 성질을 비교하였다. 게이트 길이는 30 nm, 금속 공간층의 깊이를 채널 표면에서부터 4 nm~12 nm까지 변화하면서 TCAD 시뮬레이션 툴인 Sentaurus를 사용하여 전기적 특성을 계산하였다. 금속 공간층의 깊이가 채널표면에 가까워 질수록 fringing field가 증가하여 드레인 전류가 증가하였고, 금속 공간층의 전기적 차폐로 인해 인접 셀의 간섭현상도 감소하였다. 금속 공간층이 표면에 가까이 위치할수록 전하 저장층을 감싸는 면적이 증가하여 coupling ratio가 높아지기 때문에 subthreshold swing 특성이 향상되었으나, 금속 누설전류가 증가하였다.

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A Study on the Oxide Scale of the Long Term Serviced 12%Cr Boiler Tube Steel (장기간 사용한 12%Cr강 보일러 튜브의 산화스케일에 관한 연구)

  • Kim, Beom-Soo;Min, Taek-Ki
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.24 no.3
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    • pp.281-287
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    • 2012
  • The internal oxide scale of twelve superheater and reheater tubes were tested which were serviced for 30,000~120,000 hours in thermal power plants. The oxide scale was formed in three layers. The Cr-rich area was observed beneath the original metal surface. The hematite ($Fe_2O_3$) phase was formed on the outer surface. The intermediate layer was magnetite ($Fe_3O_4$). The thickness of Cr-rich layer was about half of the total scale. All layers grew during the operation hour of the plant. The thickness of thickest scale was 0.2mm in superheater tubes. This can increase the tube metal temperature about $7^{\circ}C$ more than initial state. $7^{\circ}C$ tube metal temperature can reduce tube life about 30%, but the boiler tube's design margin is big enough therefore it has been analyzed that it would not effect on the life span.

Reactivity of Biogenic Manganese Oxide for Metal Sequestration and Photochemistry: Computational Solid State Physics Study (전산 고체물리를 이용한 바이오 산화망간 광물의 금속흡착과 광화학 반응도의 이해)

  • Kwon, Ki-Deok D.;Sposito, Garrison
    • Journal of the Mineralogical Society of Korea
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    • v.23 no.2
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    • pp.161-170
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    • 2010
  • Many microbes, including both bacteria and fungi, produce manganese (Mn) oxides by oxidizing soluble Mn(II) to form insoluble Mn(IV) oxide minerals, a kinetically much faster process than abiotic oxidation. These biogenic Mn oxides drive the Mn cycle, coupling it with diverse biogeochemical cycles and determining the bioavailability of environmental contaminants, mainly through strong adsorption and redox reactions. This mini review introduces recent findings based on quantum mechanical density functional theory that reveal the detailed mechanisms of toxic metal adsorption at Mn oxide surfaces and the remarkable role of Mn vacancies in the photochemistry of these minerals.

Observation of Shear Bonding Strength by Compositional Change and Firing Steps of the Ni-Cr Alloy for Porcelain Fused Metal Crown (금속-도재관용 Ni-Cr합금의 조성변화와 소성단계에 따른 전단결합강도)

  • Cho, Yong-Wan;Hong, Min-Ho;Kim, Won-Young;Choi, Sung-Min;Chung, In-Sung
    • Journal of Technologic Dentistry
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    • v.35 no.4
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    • pp.353-358
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    • 2013
  • Purpose: This study was observation shear bonding strength by compositional change and firing step of a Ni-Cr alloy for porcelain fused metal crown. The aim of study was to suggest the material for firing step of Ni71-Cr14 alloy to development of alloy for porcelain fused to metal crown. Methods: The test was on the two kinds of Ni-Cr alloy specimens. The surfaces of two alloys were analyzed by EDX in order to observe oxide characteristic. And the shear test was performed by MTS. Results: The surface property and oxide characteristic analysis of oxide layer, weight percentage of Element O within $Ni_{71}Cr_{14}$ alloy measured 23.32wt%, and $Ni_{59}Cr_{24}$ alloy was measured 23.03wt%. And the maximum shear bonding strength was measured 58.02MPa between $Ni_{59}Cr_{24}$ alloy and vintage halo(H4 group). Conclusion: The surface property and oxide characteristic three kind of Ni-Cr alloy was similar. and shear bonding strength showed the highest bonding strength in H4 specimens.