• The Transactions of the Korea Information Processing Society
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• v.7 no.1
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• pp.65-73
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• 2000

This paper deals with a design and performance analysis of a parallel signal processing system based on TMS320C67x. With an emphasis on the board-level design of the processor unit four models are proposed with different memory configurations and internal bus schemes. Several approaches to parallel processing of 2D FFT are also presented to be used for performance analysis. The performance of four board models are estimated and compared in terms of the time spent for local memory access, inter-processor communication, and inter-board communication. The results of performance analysis show that, when performance and implementation complexity are taken into account, the model with both local and shared memories is the most desirable.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1696-1704
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• 2008

The conventional hard disk has been the dominant database storage system for over 25 years. Recently, hybrid systems which incorporate the advantages of flash memory into the conventional hard disks are considered to be the next dominant storage systems. Their features are satisfying the requirements like enhanced data I/O, energy consumption and reduced boot time, and they are sufficient to hybrid storage systems as major database storages. However, we need to improve traditional index management schemes based on B-Tree due to the relatively slow characteristics of hard disk operations, as compared to flashmemory. In order to achieve this goal, we propose a new index management scheme called FNC-Tree. FNC-Tree-based index management enhanced search and update performance by caching data objects in unused free area of flash leaf nodes to reduce slow hard disk I/Os in index access processes. Based on the results of the performance evaluation, we conclude that our scheme outperforms the traditional index management schemes.

• Journal of KIISE:Computer Systems and Theory
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• v.31 no.11
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• pp.658-672
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• 2004

Multimedia applications are required to process the huge amount of data at high speed in real time. The memory reference instructions such as loads and stores are the main factor which limits the high speed execution of processor. To enhance the memory reference speed, cache prefetch schemes are used so as to reduce the cache miss ratio and the total execution time by previously fetching data into cache that is expected to be referenced in the future. In this study, we present an advanced data cache prefetching scheme that improves the conventional RPT (reference prediction table) based scheme. We considers the cache line size in calculation of the address stride referenced by the same instruction, and enhances the prefetching algorithm so that the effect of prefetching could be maintained even if an irregular address stride is inserted into the series of uniform strides. According to experiment results on multimedia benchmark programs, the cache miss ratio has been improved 29% in average compared to the conventional RPT scheme while the bus usage has increased relatively small amount (0.03%).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.8
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• pp.1877-1886
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• 2010

In this paper, we design a redundancy control circuit for 1T-SRAM repair using electrical fuse programming. We propose a dual port eFuse cell to provide high program power to the eFuse and to reduce the read current of the cell by using an external program supply voltage when the supply power is low. The proposed dual port eFuse cell is designed to store its programmed datum into a D-latch automatically in the power-on read mode. The layout area of an address comparison circuit which compares a memory repair address with a memory access address is reduced approximately 19% by using dynamic pseudo NMOS logic instead of CMOS logic. Also, the layout size of the designed redundancy control circuit for 1T-SRAM repair using electrical fuse programming with Dongbu HiTek's $0.11{\mu}m$ mixed signal process is $249.02 {\times}225.04{\mu}m^{2}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.206-206
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• 2010

정보화 기술이 급속히 발전함에 따라서 보다 많은 양의 data를 전송, 처리, 저장 하게 되면서 이를 처리 할 수 있는 대용량, 고속, 비휘발성의 차세대 메모리의 개발이 요구 되고 있다. 이 중 저항 변화 메모리(ReRAM)는 일반적으로 전이금속산화물을 이용한 MIM 구조로서 적당한 전기 신호를 가하면 저항이 높아서 전도되지 않는 상태(Off state)에서 저항이 낮아져 전도가 가능한 상태(On state)로 바뀌는 메모리 특성을 가진다. ReRAM은 비휘발성 메모리이며 종래의 비휘발성 기억소자인 Flash memory 보다 access time이 $10^5$배 이상 빠르며, 2~5V 이하의 낮은 전압에서 동작이 가능하다. 또한 구조가 간단하여 공정상의 결함을 현저히 줄일 수 있다는 점 등 많은 장점들이 있어서 Flash memory를 대체할 수 있는 유력한 후보로 여겨지고 있다. 저항 변화의 특징을 잘 나타내는 물질에는 $TiO_2$, $Al_2O_3$, $NiO_2$, $HfO_2$, $ZrO_2$등의 많은 전이금속산화물들이 있다. 본 연구에서는 Reactive DC-magnetron Sputtering 방법과 DC-magnetron sputter를 이용하여 Ti를 증착한 후 Oxidation 방법으로 각각 증착한 $TiO_2$박막을 사용하여 저항변화특성을 관찰하였다. $TiO_2$상부에 Atomic Layer Deposition (ALD)를 이용하여 $HfO_2$ 박막을 증착하여 표면처리를 하고, 또한 $TiO_2$에 다른 전이 금속박막 층을 추가 증착하여 저항변화 특성에 접합한 조건을 찾는 연구를 진행하였다. 하부 전극과 상부 전극 물질로는 Si 100 wafer 위에 Pt 또는 TiN을 사용하였다. 저항변화 특성을 평가하기 위해 Agilent E5270B를 이용하여 current-voltage (I-V)를 측정하였다. X-ray Diffraction (XRD)를 이용하여 증착 된 전기금속 박막 물질의 결정성을 관찰했으며, Atomic Force Microscopy (AFM)을 이용하여 증착 된 샘플의 표면을 관찰했다. SEM과 TEM을 통해서는 sample의 미세구조를 확인 하였다.

• Journal of KIISE
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• v.42 no.8
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• pp.947-953
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• 2015

PRAM is being considered as a potential successor to DRAM because of its characteristics such as byte-addressability, non-volatility, and high density. To gain its benefits, buffer cache replacement algorithm based on PRAM has been actively studied. However, most of the previous studies on buffer cache replacement algorithm limitedly exploit the byte-level performance of PRAM by focusing its limited lifetime and slower access latency compared to DRAM. In this paper, we propose a novel buffer cache replacement algorithm that fully considers the byte-level performance of PRAM and the performance of secondary storage. To take advantage of small size write on PRAM, proposed scheme keeps pages, which are frequently accessed with a small size write, on PRAM and allows the selective page migration from DRAM to PRAM. As a result, our scheme significantly reduces the number of PRAM writes. Our experimental results indicate for real workloads that our scheme reduces the number of PRAM writes by up to 92% and improves its performance by up to 62% compared to CLOCK.

• Journal of KIISE
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• v.42 no.8
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• pp.961-971
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• 2015

As a representative area-decomposed algorithm, an area-based quad-trie (AQT) has an issue of search performance. The search procedure must continue to follow the path to its end, due to the possibility of the higher priority-matching rule, even though a matching rule is encountered in a node. A leaf-pushing AQT improves the search performance of the AQT by making a single rule node exist in each search path. This paper proposes a new algorithm to further improve the search performance of the leaf-pushing AQT. The proposed algorithm implements a leaf-pushing AQT using a hash table and an on-chip Bloom filter. In the proposed algorithm, by sequentially querying the Bloom filter, the level of the rule node in the leaf-pushing AQT is identified first. After this procedure, the rule database, which is usually stored in an off-chip memory, is accessed. Simulation results show that packet classification can be performed through a single hash table access using a reasonable sized Bloom filter. The proposed algorithm is compared with existing algorithms in terms of the memory requirement and the search performance.

• The KIPS Transactions:PartD
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• v.17D no.6
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• pp.383-394
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• 2010

Flash memory based SSDs are currently being considered as a promising candidate for replacing hard disks due to several superior features such as shorter access time, lower power consumption and better shock resistance. However, SSDs have different characteristics from hard disk such as difference of unit and time for read, write and erase operation and impossibility for over-writing. Because of these reasons, SSDs have disadvantages on hard disk based systems, so FTL(Flash Translation Layer) is designed to increase SSDs' efficiency. In this paper, we propose an advanced logical address mapping method for increasing SSDs' performance, which is named HAMM(Hybrid Address Mapping Method). HAMM addresses drawbacks of previous block-mapping method and super-block-mapping method and takes advantages of them. We experimented our method on our own SSDs simulator. In the experiments, we confirmed that HAMM uses storage area more efficiently than super-block-mapping method, given the same buffer size. In addition, HAMM used smaller memory than block-mapping method to construct mapping table, demonstrating almost same performance.

• Journal of KIISE:Computing Practices and Letters
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• v.5 no.6
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• pp.700-707
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• 1999

본 논문에서는 GIS 관련 연산을 실시간에 효율적으로 처리하기 위한 분산공유메모리 기반 병렬처리 시스템을 제안한다. 본 논문의 분산공유메모리 시스템은 메시지전달 방식의 분산메모리 MIMD 컴퓨터 상에 소프트웨어 기반 분산공유메모리 모듈을 탑재함으로써 구현되었다. 또한 GIS 연산의 기본이 되는 공간 객체를 공유의 기본 단위로 설정하고, GIS 데이타의 특성을 반영하여 읽기전용 공유데이타 타입을 추가하였으며, 네트워크 오버헤드를 줄이기 위하여 복수의 객체를 한번에 읽어오는 bulk access가 가능하도록 하였다. 본 시스템에서는 GIS 데이타의 효율적인 분배를 위하여 부하균등화 기법으로 guided self scheduling을 사용하였다. 실험결과 본 시스템은 네트워크 캐쉬의 효율적인 활용을 통하여 소프트웨어 기반 분산메모리 시스템의 오버헤드에도 불구하고 MPI 기반 메시지전달 방식에 비하여 향상된 성능을 얻을 수 있었다.Abstract In this paper, we propose a distributed shared memory(DSM) based parallel processing system to process GIS related computations efficiently in real time. The system is based on a software DSM module implemented on top of a distributed MIMD computer. In the DSM system, spatial object, which is a fundamental structure to represent GIS data, is used as a basic unit for sharing, and a read-only shared data type is added to reflect the characteristics of GIS data. In addition, a bulk access to multiple shared data is made possible to reduce the network overhead. A guided self scheduling method is devised for efficient load balancing in distributing GIS data to parallel processors. The experimental results show that the DSM system performs better than an MPI based message-passing system through the efficient utilization of network cache in spite of the system's software overhead.