• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.10 s.340
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• pp.1-8
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• 2005

In this paper, a FRAM design style based on PMOS-gating cell structure is described. The memory cell consists of a PMOS access transistor and a ferroelectric capacitor. Its plate is grounded. The proposed scheme employs three novel operating methods: 1) $V_{DD}$ precharged bitline, 2) negative-voltage wordline technique and 3) negative-pulse restore, Because this configuration doesn`t need the on-pitch plate control circuitry, it is effective in realizing cost-effective chip sizes. Implementation for a 2.5-V, 1-Mb FRAM prototype design in a $0.25-{\mu}m$, triple-well technology shows a chip size of $3.22\;mm^{2}$, an access time of 48 ns and an active current of 11 mA. The cell efficiency is 62.52 $\%$. It has gained approximately $20\;\%$ improvement in the cell array efficiency over the conventional plate-driven FRAM scheme.

• Journal of the Korea Society of Computer and Information
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• v.16 no.10
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• pp.1-10
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• 2011

There are the large overhead of block erase and page write operations in NAND flash memory, though it has low power consumption, cheap prices and a large storage. Due to the physical characteristics of NAND flash memory, overwrite operations are not permitted at the same location, so rewriting operation require after erase operation. it cause performance decrease of NAND flash memory. Using SRAM buffer in traditional NAND flash memory, it can not only reduce effective write operation but also guarantee fast memory access time. In this paper, we proposed the small SRAM buffer management system for reducing overhead of NAND flash memory, that is, erase and write operations. The proposed buffer system in a NAND flash memory consists of two parts, i.e., a fully associative temporal buffer with the small fetching block size and a fully associative spatial buffer with the large fetching block size. The temporal buffer have small fetching blocks that referenced from spatial buffer. When it happen write operations or erase operations in NAND flash memory, the related fetching blocks in temporal buffer include a page or a block are written in NAND flash memory at the same time. The writing and erasing counts in NAND flash memory can be reduced. According to the simulation results, although we have high miss ratios, write and erase operations can be reduced approximatively 58% and 83% respectively. Also the average memory access times are improved about 84% compared with the fully associative buffer with two sizes.

• 전기의세계
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• v.31 no.5
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• pp.355-360
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• 1982

In numerical computation, it is desirable to access any row or column, the main diagonal, subarrays, of a matrix without any conflict for successful parallel processing. To meet this requirement special storage scheme is used for conflict-free access of necessary data. Interconnection network, which connects processing elements and processing element memory modules, is required to execute the necessary operations. In this paper we discuss the skewing method for conflict-free, access to various bit slices and single-stage interconnection networks.

• ETRI Journal
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• v.44 no.3
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• pp.450-461
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• 2022

The Gen-Z protocol is a memory semantic protocol between the memory and CPU used in computer architectures with large memory pools. This study presents the implementation of the Gen-Z hardware system configured using Gen-Z specification 1.0 and reports its performance. A hardware prototype of a DDR4 Gen-Z memory pool with an optimized character, a block device driver, and a file system for the Gen-Z hardware was designed. The Gen-Z IP was targeted to the FPGA, and a 512 GB Gen-Z memory pool was configured on an ×86 server. In the experiments, the latency and throughput of the Gen-Z memory were measured and compared with those of the local memory, SATA SSD, and NVMe using character or block device interfaces. The Gen-Z hardware exhibited superior throughput and latency performance compared with SATA SSD and NVMe at block sizes under 4 kB. The MySQL and File IO benchmark of Gen-Z showed good write performance in all block sizes and threads. Besides, it showed low latency in RocksDB's fillseq dbbench using the ext4 direct access filesystem.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.8
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• pp.758-762
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• 2008

Embedded systems usually utilize Flash Memories with very nice characteristics of non-volatility, low access time, low power and so on. For the multimedia database systems, R-tree is an indexing tree with nice characteristics for multimedia access. MR-tree, which is an upgraded version of R-tree, has shown better performance in searching, inserting and deleting operations than R-tree. Flash memory has sectors and blocks as a unit of read, write and delete operations. Especially, the delete is done on a unit of 512 byte blocks with very large operation time and it is also known that read and write operations on a unit of block matches caching nature of MT-tree. Our research optimizes MR-tree operations in a unit of Flash memory blocks. Such an adjusting leads in better indexing performance in database accesses. With MR-tree on a 512B block units we achieved fast search time of database indexing with low height of MR-tree as well as faster update time of database indexing with the best fit of flash memory blocks. Thus MR-tree with optimized operations shows good characteristics to be a database index schemes on any systems with flash memory.

• Journal of KIISE:Software and Applications
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• v.35 no.5
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• pp.281-287
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• 2008

Data transfers occur during the execution time of a Java program, from constant to variable, from variable to other variable and so on. Data are located in memory and hence data transfer requires access to memory. As memory access generates both time delay and energy consumption it is absolutely necessary to know the data transfer overheads incurred among different paths not only to write an efficient program but also to build a high-performance Java virtual machine. In this paper we classify Java memory into three different regions, constant, local variable, and field, and then investigate data transfer overheads among these regions. The result says that the transfer between local variables incur the least overhead usually, while the transfer between fields incur the most. The difference of overheads reaches up to a double. Optimization techniques like JIT reduces the data transfer overhead dramatically. It is observed that the overhead is reduced from 14 to 27 times for the case of Hotspot JVM.

• Journal of Advanced Navigation Technology
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• v.14 no.5
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• pp.767-774
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• 2010

Due to advantages of NAND flash memory such as non-volatility, low access latency, low energy consumption, light weight, small size and shock resistance, it has become a better alternative over traditional magnetic disk drives, and has been widely used. Traditional DBMSs including mobile DBMSs may run on flash memory without any modification by using Flash Translation Layer (FTL), which emulates a random access block device to hide the characteristics of flash memory such as "erase-before-update". However, most existing FTLs are optimized for file systems, not for DBMSs, and traditional DBMSs are not aware of them. Also, traditional DBMSs do not consider the characteristics of flash memory. In this paper, we propose a flash-conscious storage system for DBMSs that utilizes flash memory as a main storage medium, and carefully put the characteristics of flash memory into considerations. The proposed flash-conscious storage system exploits log records to avoid costly update operations. It is shown that the proposed storage system outperforms the state.

• The Transactions of the Korea Information Processing Society
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• v.6 no.8
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• pp.2245-2252
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• 1999

Since DSM provides a user a simple shared memory abstraction, the user does not have to be concerned with data movement between hosts. Each node in DSM systems has processor, memory, and connection to a network. Memory is divided into pages, and a page can have multiple copies in different nodes. To maintain data consistency between nodes, two conventional protocols are used : write-update protocol and invalidate protocol. The performance of these protocols depends on the system parameters and the memory access patterns. for adapting to memory access patterns, competitive update protocol updates those copies of a page that are expected to be used in the near future, while selectively invalidating other copies. We present weighted competitive update protocols that consider different communication bandwidth for each connection a of two nodes. Test result by simulation show that the weighted competitive update protocol improves performance.

• Journal of KIISE:Computer Systems and Theory
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• v.31 no.12
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• pp.716-725
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• 2004

It is extremely important to minimize network access time in constructing a high-performance PC cluster system. For PC cluster systems, it is possible to reduce network access time by maintaining network cache in each cluster node. This paper presents a Network Cache Coherent NUMA (NCC-NUMA) system to utilize network cache by locating shared memory on the PCI bus, and the NCC-NUMA card which is core module of the NCC-NUMA system is developed. The NCC-NUMA card is directly plugged into the PCI slot of each node, and contains shared memory, network cache, shared memory control module and network control module. The network cache is maintained for the shared memory on the PCI bus of cluster nodes. The coherency mechanism between the network cache and the shared memory is based on the IEEE SCI standard. According to the SPLASH-2 benchmark experiments, the NCC-NUMA system showed improvements of 56% compared with an SCI-based cluster without network cache.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.7-17
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• 2010

In this paper, an innovative low-power SRAM based on 4-transistor latch cell is described. The memory cells are composed of two cross-coupled inverters without access transistors. The sources of PMOS transistors are connected to bitlines while the sources of NMOS transistors are connected to wordlines. They are accessed by totally new read and write method which results in low operating power dissipation in the nature. Moreover, the design reduces the leakage current in the memory cells. The proposed SRAM has been demonstrated through 16-kbit test chip fabricated in a 0.18-${\mu}m$ CMOS process. It shows 17.5 ns access at 1.8-V supply while consuming dynamic power of $87.6\;{\mu}W/MHz$ (for read cycle) and $70.2\;{\mu}W/MHz$ (for write cycle). Compared with those of the conventional 6-transistor SRAM, it exhibits the power reduction of 30 % (read) and 42 % (write) respectively. Silicon measurement also confirms that the proposed SRAM achieves nearly 64 % reduction in the total standby power dissipation. This novel SRAM might be effective in realizing low-power embedded memory in future mobile applications.