• Title/Summary/Keyword: Memory Soft Error

Search Result 40, Processing Time 0.023 seconds

Availability Analysis of Xilinx 7-Series FPGA against Soft Error (Xilinx 7-Series FPGA의 소프트 에러에 대한 가용성 분석)

  • Ryu, Sang-Moon
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2016.10a
    • /
    • pp.655-658
    • /
    • 2016
  • Xilinx 7-Series FPGA(Field Programmable Gate Array)s mainly used for the implementation of high-performance digital circuit have SRAM-type configuration memory and can malfunction when soft errors occur in their configuration memory. SEM(Soft Error Mitigation Controller) offered by Xilinx helps users mitigate the influence of soft errors in configuration memory. When soft errors occur, SEM Controller can recover the state of FPGA through partial reconfiguration if the soft errors are correctable by ECC(Error Correction Code) and CRC(Cyclic Redundancy Code). This paper presents the availability analysis of Xilinx 7-Series FPGAs against soft errors under the protection of the SEM Controller. Availability functions are derived and compared according to the correction capability of the SEM Controller. The result may help to estimate the reliability of SRAM-based FPGA running in an environment where soft errors may occur.

  • PDF

Availability Analysis of SRAM-Based FPGAs under the protection of SEM Controller (SEM Controller에 의해 보호되는 SRAM 기반 FPGA의 가용성 분석)

  • Ryu, Sang-Moon
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.21 no.3
    • /
    • pp.601-606
    • /
    • 2017
  • SRAM-based FPGAs mainly used to develop and implement high-performance circuits have SRAM-type configuration memory. Soft errors in memory devices are the main threat from a reliability point of view. Soft errors occurring in the configuration memory of FPGAs cause FPGAs to malfunction. SEM(Soft Error Mitigation) Controllers offered by Xilinx can mitigate the influence of soft errors in configuration memory. SEM Controllers use ECC(Error Correction Code) and CRC(Cyclic Redundancy Code) which are placed around the configuration memory to detect and correct the errors. The correction is done through a partial reconfiguration process. This paper presents the availability analysis of SRAM-based FPGAs against soft errors under the protection of SEM Controllers. Availability functions were derived and compared according to the correction capability of SEM Controllers of several different families of FPGAs. The result may help select an SRAM-based FPGA part and estimate the availability of FPGAs running in an environment where soft errors occur.

An Optimal Scrubbing Scheme for Auto Error Detection & Correction Logic (자가 복구 오류 검출 및 정정 회로 적용을 고려한 최적 스크러빙 방안)

  • Ryu, Sang-Moon
    • Journal of Institute of Control, Robotics and Systems
    • /
    • v.17 no.11
    • /
    • pp.1101-1105
    • /
    • 2011
  • Radiation particles can introduce temporary errors in memory systems. To protect against these errors, so-called soft errors, error detection and correcting codes are used. In addition, scrubbing is applied which is a fundamental technique to avoid the accumulation of soft errors. This paper introduces an optimal scrubbing scheme, which is suitable for a system with auto error detection and correction logic. An auto error detection and correction logic can correct soft errors without CPU's writing operation. The proposed scrubbing scheme leads to maximum reliability by considering both allowable scrubbing load and the periodic accesses to memory by the tasks running in the system.

SEC-DED-DAEC codes without mis-correction for protecting on-chip memories (오정정 없이 온칩 메모리 보호를 위한 SEC-DED-DAEC 부호)

  • Jun, Hoyoon
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.26 no.10
    • /
    • pp.1559-1562
    • /
    • 2022
  • As electronic devices technology scales down into the deep-submicron to achieve high-density, low power and high performance integrated circuits, multiple bit upsets by soft errors have become a major threat to on-chip memory systems. To address the soft error problem, single error correction, double error detection and double adjacent error correction (SEC-DED-DAEC) codes have been recently proposed. But these codes do not troubleshoot mis-correction problem. We propose the SEC-DED_DAEC code with without mis-correction. The decoder for proposed code is implemented as hardware and verified. The results show that there is no mis-correction in the proposed codes and the decoder can be employed on-chip memory system.

Reliability Analysis of Interleaved Memory with a Scrubbing Technique (인터리빙 구조를 갖는 메모리의 스크러빙 기법 적용에 따른 신뢰도 해석)

  • Ryu, Sang-Moon
    • Journal of Institute of Control, Robotics and Systems
    • /
    • v.20 no.4
    • /
    • pp.443-448
    • /
    • 2014
  • Soft errors in memory devices that caused by radiation are the main threat from a reliability point of view. This threat can be commonly overcome with the combination of SEC (Single-Error Correction) codes and scrubbing technique. The interleaving architecture can give memory devices the ability of tolerating these soft errors, especially against multiple-bit soft errors. And the interleaving distance plays a key role in building the tolerance against multiple-bit soft errors. This paper proposes a reliability model of an interleaved memory device which suffers from multiple-bit soft errors and are protected by a combination of SEC code and scrubbing. The proposed model shows how the interleaving distance works to improve the reliability and can be used to make a decision in determining optimal scrubbing technique to meet the demands in reliability.

Soft Error Rate for High Density DRAM Cell (고집적 DRAM 셀에 대한 소프트 에러율)

  • Lee, Gyeong-Ho;Sin, Hyeong-Sun
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.38 no.2
    • /
    • pp.87-94
    • /
    • 2001
  • A soft error rate for DRAM was predicted in connection with the leakage current in cell capacitor. The charge in cell capacitor was decreased during the DRAM operation, and soft error retes due to the leakage current were calculated in various operation mode of DRAM. It was found that the soft error rate of the /bit mode was dominant with small leakage current, but as increasing the leakage current memory mode shown the dominant effect on soft error rate. Using the 256M grade DRAM structure it was predicted that the soft error rate was influenced by the change of the cell capacitance, bit line capacitance, and the input voltage sensitivity of sense amplifier, and these results can be used to the design of the optimum cells in the next generation DRAM development.

  • PDF

Error correction codes to manage multiple bit upset in on-chip memories (온칩 메모리 내 다중 비트 이상에 대처하기 위한 오류 정정 부호)

  • Jun, Hoyoon
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.26 no.11
    • /
    • pp.1747-1750
    • /
    • 2022
  • As shrinking the semiconductor process into the deep sub-micron to achieve high-density, low power and high performance integrated circuits, MBU (multiple bit upset) by soft errors is one of the major challenge of on-chip memory systems. To address the MBU, single error correction, double error detection and double adjacent error correction (SEC-DED-DAEC) codes have been recently proposed. But these codes do not resolve mis-correction. We propose the SEC-DED-DAEC-TAED(triple adjacent error detection) code without mis-corrections. The generated H-matrix by the proposed heuristic algorithm to accomplish the proposed code is implemented as hardware and verified. The results show that there is no mis-correction in the proposed codes and the 2-stage pipelined decoder can be employed on-chip memory system.

An Optimal Scrubbing Scheme for Protection of Memory Devices against Soft Errors (메모리 소자의 소프트 에러 극복을 위한 최적 스크러빙 방안)

  • Ryu, Sang-Moon
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2011.10a
    • /
    • pp.677-680
    • /
    • 2011
  • Error detection and correcting codes are typically used to protect against soft errors. In addition, scrubbing is applied which is a fundamental technique to avoid the accumulation of soft errors. This paper introduces an optimal scrubbing scheme, which is suitable for a system with auto error detection and correction logic. An auto error detection and correction logic can correct soft errors without CPU's writing operation. The proposed scrubbing scheme leads to maximum reliability by considering both allowable scrubbing load and the periodic accesses to memory by the tasks running in the system.

  • PDF

Design of Low Power Error Correcting Code Using Various Genetic Operators (다양한 유전 연산자를 이용한 저전력 오류 정정 코드 설계)

  • Lee, Hee-Sung;Hong, Sung-Jun;An, Sung-Je;Kim, Eun-Tai
    • Journal of the Korean Institute of Intelligent Systems
    • /
    • v.19 no.2
    • /
    • pp.180-184
    • /
    • 2009
  • The memory is very sensitive to the soft error because the integration of the memory increases under low power environment. Error correcting codes (ECCs) are commonly used to protect against the soft errors. This paper proposes a new genetic ECC design method which reduces power consumption. Power is minimized using the degrees of freedom in selecting the parity check matrix of the ECCs. Therefore, the genetic algorithm which has the novel genetic operators tailored for this formulation is employed to solve the non-linear power optimization problem. Experiments are performed with Hamming code and Hsiao code to illustrate the performance of the proposed method.

Radiation-Induced Soft Error Detection Method for High Speed SRAM Instruction Cache (고속 정적 RAM 명령어 캐시를 위한 방사선 소프트오류 검출 기법)

  • Kwon, Soon-Gyu;Choi, Hyun-Suk;Park, Jong-Kang;Kim, Jong-Tae
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.35 no.6B
    • /
    • pp.948-953
    • /
    • 2010
  • In this paper, we propose multi-bit soft error detection method which can use an instruction cache of superscalar CPU architecture. Proposed method is applied to high-speed static RAM for instruction cache. Using 1D parity and interleaving, it has less memory overhead and detects more multi-bit errors comparing with other methods. It only detects occurrence of soft errors in static RAM. Error correction is treated like a cache miss situation. When soft errors are occurred, it is detected by 1D parity. Instruction cache just fetch the words from lower-level memory to correct errors. This method can detect multi-bit errors in maximum 4$\times$4 window.