• Design & Manufacturing
• /
• v.10 no.2
• /
• pp.50-54
• /
• 2016

In the semiconductor industry the final products were checked for several environments before sell the products. The burning test of memory and chip was implemented in reliability for all of parts. The memory and chip were developed to high density memory and high performance chip, so circuit design was also high integrated and the test bed was needed to be thin and fine pitch socket. LGA(Land Grid Array) IC socket with thin wall thickness was designed to satisfy this requirement. The LGA IC socket plastic part was manufacture by injection molding process, it was needed accuracy, stiffness and suit resin with high flowability. In this study, injection molding process analysis was executed for 2 and 4 cavities moldings with runner, gate and sprue. The warpage analysis was also implemented for further gate removal process. Through the analyses the total deformations of the moldings were predicted within maximum 0.05mm deformation. Finally in consideration of these results, 2 and 4 cavities molds were designed and made and tested in injection molding process.

• Smart Media Journal
• /
• v.8 no.1
• /
• pp.19-26
• /
• 2019

At the opening ceremony of 2018 Winter Olympics in PyeongChang, an unknown cyber-attack occurred. The malicious code used in the attack is based on in-memory malware, which differs from other malicious code in its concealed location and is spreading rapidly to be found in more than 140 banks, telecommunications and government agencies. In-memory malware accounts for more than 15% of all malicious codes, and it does not store its own information in a non-volatile storage device such as a disk but resides in a RAM, a volatile storage device and penetrates into well-known processes (explorer.exe, iexplore.exe, javaw.exe). Such characteristics make it difficult to analyze it. The most recently released in-memory malicious code bypasses the endpoint protection and detection tools and hides from the user recognition. In this paper, we propose a method to efficiently extract the payload by unpacking injection through IDA Pro debugger for Dorkbot and Erger, which are in-memory malicious codes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.80-83
• /
• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.

• Journal of Physiology & Pathology in Korean Medicine
• /
• v.30 no.5
• /
• pp.347-354
• /
• 2016

This study evaluated the effects of Fructus Corni Officinalis water extract (FCE) on congnitive impairment and Aβ clearance induced by beta amyloid Aβ (1-42) injection in the hippocampus of rat. Aβ (1-42) was injected into the hippocampus using a Hamilton syringe and micropump (5 ㎍/5 ㎕, 1 ㎕/min, each hippocampus bilaterally). FCE was administered orally once a day (100, 250, 500 mg/kg) for 4 weeks after the Aβ (1-42) injection. The acquisition of learning and retention of memory were tested using the Morris water maze. Aβ accumulation and Aβ clearance in the hippocampus were observed using immunostaining. Aβ (1-42) level in plasma was confirmed using enzyme-linked immunosorbent assay (ELISA). FCE significantly shortened the escape latencies during acquisition training trials. FCE significantly increased the number of target heading to the platform site and significantly shortened the time for the 1^sttargetheadingduringtheretentiontesttrial.FCEsignificantlyattenuatedtheAβ accumulation in the hippocampus produced by Aβ (1-42) injection. FCE significantly increased LRP-1 expression around vessels in the hippocampus and Aβ (1-42) levels in plasma. The results suggest that FCE improved cognitive impairment by ameliorate Aβ clearance and Aβ accumulation in the hippocampus. FCE may be a beneficial herbal formulation in treating cognitive impairment including Alzheimer's disease.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• v.7 no.5
• /
• pp.1272-1290
• /
• 2013

Privacy-preserving collaborative filtering schemes are becoming increasingly popular because they handle the information overload problem without jeopardizing privacy. However, they may be susceptible to shilling or profile injection attacks, similar to traditional recommender systems without privacy measures. Although researchers have proposed various privacy-preserving recommendation frameworks, it has not been shown that such schemes are resistant to profile injection attacks. In this study, we investigate two memory-based privacy-preserving collaborative filtering algorithms and analyze their robustness against several shilling attack strategies. We first design and apply formerly proposed shilling attack techniques to privately collected databases. We analyze their effectiveness in manipulating predicted recommendations by experimenting on real data-based benchmark data sets. We show that it is still possible to manipulate the predictions significantly on databases consisting of masked preferences even though a few of the attack strategies are not effective in a privacy-preserving environment.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.10 no.2
• /
• pp.143-151
• /
• 2010

In this work, we propose a single electron memory 'SEM' design which consist of two key blocs: A memory bloc, with a voltage source $V_{Mem}$, a pure capacitor connected to a tunnel junction through a metallic memory node coupled to the second bloc which is a Single Electron Transistor "SET" through a coupling capacitance. The "SET" detects the potential variation of the memory node by the injection of electrons one by one in which the drainsource current is presented during the memory charge and discharge phases. We verify the design of the SET/SEM cell by the SIMON tool. Finally, we have developed a MAPLE code to predict the retention time and nonvolatility of various SEM structures with a wide operating temperature range.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.1
• /
• pp.11-20
• /
• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• The Journal of Pediatrics of Korean Medicine
• /
• v.19 no.1
• /
• pp.67-82
• /
• 2005

Objectives : This study was conducted to find out the effect of Yukmijiwhangtanggamibang (YM) on growth, learning and memory of rats. Methods : It was divided SD rats into Sham group, 192 Saporin injection(SA+Saline) group and Injection of 192 Saporin with YM(SA+YM) group. Growth measure length of bone and tail. Memory performance was used aquisition test and learning retention of morris water maze. It was detected acetylcholinesterase(AChE), cholineacetyltransferase(ChAT) at medial septum and hippocampus by immunohistochemistry Results : Body Weight of the SA+YM Group increased effectively, as compared with SA Saline group. Growth of bone in the SA+YM Group increased effectively, as compared with SA+Saline group. Growth of Tail in the SA+YM Group increased effectively, as compared with SA_Saline group. The SA+YM Group in Aquisition Test improved effectively, as compared with SA+Saline group. The SA+YM Group in Learning Test improved effectively, as compared with SA+Saline group. The numbers of ChAT cells in Medial septum increased effectively, as compared with SA+Saline group. The numbers of ChAT cells in CA1 of Hippocampus increased, but was not effective. Conclusion : These results suggest that YM has an improving effect on the impaired learning through the effects on memory registration and retrieval.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.15 no.3
• /
• pp.487-494
• /
• 2020

In this paper, we propose a current memory circuit design that reduces static power consumption and maximizes the advantages of current mode signal processing. The proposed current memory circuit minimizes the problem in which the current transfer error increases as the data transfer time increases due to clock-feedthrough and charge-injection of the existing current memory circuit. The proposed circuit is designed to insert a support MOS capacitor that maximizes the Miller effect in the current transfer structure capable of low-power operation. As a result, it shows the improved current transfer error according to the memory time. From the experimental results of the chip, manufactured with MagnaChip / SK Hynix 0.35 process, it was verified that the current transfer error, according to the memory time, reduced to 5% or less.

• Journal of Physiology & Pathology in Korean Medicine
• /
• v.25 no.4
• /
• pp.691-696
• /
• 2011

In order to the neuroprotective effect of electroacupuncture (EA), the present study examined the effects of electroacupuncture inacupoint ST36 (Stomach 36) on trimethyltin chloride (TMT)-induced cognitive impairments rat using the Morris water maze (MWM) task and immunohistochemistry staining. The rats were randomly divided into the following groups: naive rat (Normal), TMT injection rat (Control), TMT injection + EA treated rat inacupoint ST36 (ST36) and TMT injection + EA treated rat in non-acupoint, base of tail (Non-AC). Electroacupuncture (2Hz, 2mA, and 10 minutes)was applied either to the acupuncture point ST36 or the nonacupuncture point in the tail for the last 14 days. In the water maze test, the animals were trained to find a platform in a fixed position during 4d and then received 60s probe trial on the $5^{th}$ day following removal of platform from the pool. Rats with TMT injection showed impaired learning and memory of the tasks and treatment with EA in acupoint ST36 (P<0.05) produced a significant improvement in escape latency to find the platform after $2^{nd}$ day and retention trial in the Morris water maze. Consistent with behavioral data, treatment with EA in acupoint ST36 also significantly increased expression of Choline acetyltransferase (ChAT) and Acetylcholinesterase (AChE) immunoreactive neurons in the hippocampus compared to the Control group. These results demonstrated that EA in acupoint ST36 has a protective effect against TMT-induced neuronal and cognitive impairments. The present study suggests that EA in acupoint ST36 might be useful in the treatment of TMT-induced learning and memory deficit.