Simulation and Modelling of the Write/Erase Kinetics and the Retention Time of Single Electron Memory at Room Temperature |
Boubaker, Aimen
(Departement d'electronique Institut des Nanotechnologies de Lyon-INL, INSA-Lyon)
Sghaier, Nabil (Departement des sciences physiques, Faculte des Sciences de Monastir) Souifi, Abdelkader (Departement d'electronique Institut des Nanotechnologies de Lyon-INL, INSA-Lyon) Kalboussi, Adel (Departement des sciences physiques, Faculte des Sciences de Monastir) |
1 | K. Nakazato and H. Ahmed, “The multiple-tunnel junction and its application to single-electron memory and logic circuits,” Jpn. J. Appl Phys., vol. 34, Feb. 1995, pp. 700-706. DOI |
2 | C.Wasshuber, “ Computational Single-Electronics,” SpringerWienNewyork, 2001, pp 169-176. |
3 | C.Dubuc, J. Beauvais, and D. Drouin, “Single electron transistors with wide operating temperature rang,” Applied Physics Letters 90, 2007, 113104. DOI ScienceOn |
4 | A. Boubaker et al, “Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator,” Microelectronics Journal, 2008, pp 543-546. |
5 | MAPLE 6, Waterloo Maple Inc, Available: http://www.maplesoft.com |
6 | M.Hocevar, “ Croissance et caracterisation electrique de nanocristaux d’InAs/ pour des applications de memoires non volatiles sur silicium”, thesis INL, Oct 2008. |
7 | J.W. Yoon et al., “Dispersion of nanosized noble metals in matrix and their photoelectrode properties,” Thin Solid Films 483, 2005, pp 276-282. DOI ScienceOn |
8 | http://sites.google.com/site/selfreliantenergy/Home/physics/workfunction, 2009. |
9 | T.G. Lei et al, “Effect of microstructure of thin films on optical band gap energy,” Chin. Phys.Lett, Vol. 22, No. 7, 2005, p787. DOI ScienceOn |
10 | V. Ray, R. Subramanian, P. Bhadrachalam, L. C. Ma, C. U. Kim and S.J. Koh “VCMOS-compatible fabrication of room temperature single-electron devices,” Nature Nanotechnology, Sep. 2008. |
11 | C. Wasshuber, H. Kosina, and S. Selberherr. “SIMON - A simulator for single-electron tunnel devices and circuits,” IEEE Trans. Comp. Aided Design Integr. Circ. Sys., 16(9), p937, 1997. DOI ScienceOn |
12 | K. Likharev and A. Korotkov, “Toward practical digital single electronics,” Electrochm. Soc. Meeting Abstr., vol. 96-2, Oct 1996, p. 563. |
13 | Christoph Wasshuber, “A Comparative Study of Single-Electron Memories,” IEEE Transactions on electron devices, Vol. 45, No 11, 1998, pp 2365-2371. DOI ScienceOn |