• 한국가시화정보학회:학술대회논문집
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• 2001.12a
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• pp.86-99
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• 2001

Vortex lock-on or resonance in the flow behind a circular cylinder is investigated from a time-resolved PIV when a single frequency oscillation is superimposed on the mean incident velocity. Measurements are made of the $K\acute{a}rm\acute{a}n$ and streamwise vortices in the wake-transition regime at the Reynolds number 360. Streamwise vortices at the lock-on and natural shedding states are observed, as well as the changes in the wake region with the change of the shedding frequency of lock-on state. When lock-on occurs, the vortex shedding frequency is found to be half the oscillation frequency as expected from previous experiments. At the lock-on state, the $K\acute{a}rm\acute{a}n$ vortices are observed to be more disordered by the increased strength and spanwise wavelength of the streamwise vortices, which leads to a strong three-dimensional motion. Recirculation and vortex formation region at the lock-on state is reduced as the oscillating frequency is increased. By comparing the Reynolds stresses at the lock-on and natural shedding states, $\bar{u'u'}\;and \;\bar{u'u'}$ at the lock-on state are concentrated on the shear layer around the cylinder. The $\bar{u'u'}\;at\;f_o/f_n=2.0$ has a large value near the centerline, compared with that of other cases. Considering the traces of maximum of u', in the wake region near the cylinder, wake width at the lock-on state is wider than that at the natural shedding state.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.3
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• pp.219-225
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• 2014

In this study, to find the characteristics of the oscillation of a terminating shock wave in a transonic airfoil flow with non-equilibrium condensation, a NACA00-12,14,15 airfoil flow with non-equilibrium condensation is investigated through numerical analysis of TVD scheme. Transonic free stream Mach number of 0.81-0.90 with the variation of stagnation relative humidity and airfoil thickness is tested. For the free stream Mach number 0.87 and attack angle of ${\alpha}=0^{\circ}$, the increase in stagnation relative humidity attenuates the strength of the terminating shock wave and inactivates the oscillation of the terminating shock wave. For the case of $M_{\infty}=0.87$ and ${\phi}_0=60%$, the decreasing rate in the frequency of the shock oscillation caused by non-equilibrium condensation to that of ${\phi}_0=30%$ amounts to 5%. Also, as the stagnation relative humidity gets larger, the maximum coefficient of drag and the difference between the maximum and minimum in $C_D$ become smaller. On the other hand, as the thickness of the airfoil gets larger, the supersonic bubble size becomes bigger and the oscillation of the shock wave becomes higher.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.57-62
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• 1993

In this paper, both feasible power gain and power added efficiency at the operating center frequency of 12 GHz are stressed to design a power FET with double-heterjunction structure. The variable parameters or the design are the unit gate width, the gate length, the doping density of AlGaAs, the AlGaAs thickness, the spacer thickness, the Al mole fraction, and the GaAs well thickness. The results of simulation for the FET with 1.mu.m gate length show that the power gain and the power added efficiency are 10.2 dB and 36.3% at 12GHz, respectively. An extrapolation of the relation between current gain and unilateral gain yields a 17 GHz cutoff frequency and 43GHz maximum frequency of oscillation. The calculation of the current versus voltage characteristics show that the output power of the device is about 0.62W.

• Journal of electromagnetic engineering and science
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• v.13 no.2
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• pp.127-133
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• 2013

We examined the scaling effects of a number of gate_fingers (N) and gate_widths (w) on the high-frequency characteristics of $0.1-{\mu}m$ metamorphic high-electron-mobility transistors. Functional relationships of the extracted small-signal parameters with total gate widths ($w_t$) of different N were proposed. The cut-off frequency ($f_T$) showed an almost independent relationship with $w_t$; however, the maximum frequency of oscillation ($f_{max}$) exhibited a strong functional relationship of gate-resistance ($R_g$) influenced by both N and $w_t$. A greater $w_t$ produced a higher $f_{max}$; but, to maximize $f_{max}$ at a given $w_t$, to increase N was more efficient than to increase the single gate_width.

• Journal of IKEEE
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• v.16 no.2
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• pp.116-120
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• 2012

We reported on a high performance InGaAs/InAlAs metamorphic HEMT with 50 nm gate length on a GaAs substrate. The fabricated $50nm{\times}60{\mu}m$ MHEMT showed good DC and RF characteristics. Typical drain current density of 740 mA/mm and extrinsic transconductance(gm) of 1.02 S/mm were obtained with our devices. The current gain cut-off frequency(fT) and maximum oscillation frequency(fmax) obtained for the fabricated MHEMT device were 430 GHz and 406 GHz, respectively.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.921-924
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• 2005

We report low conversion loss and high LO to RF isolation 94 GHz MMIC resistive mixers based on 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The fabricated resistive mixers applied a one-stage amplifier on RF port of the mixer. By using the one-stage amplifier, we obtained the decrement of conversion loss and the increment of LO to RF isolation. So, we can obtain higher performances than conventional resistive mixers. The modified mixer shows excellent conversion loss of 6.7 dB at a LO power of 10 dBm. We also observed an extremely high isolation characteristic from the MMICs exhibiting the LO-RF isolation of 21 ${\pm}$ 0.5dB in a frequency range of 93.7${\sim}$ 94.3 GHz. The low conversion loss and high LO-RF isolation characteristics of the MMIC modified resistive mixers are mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 654 mS/mm, a current gain cut-off frequency of 173 GHz and a maximum oscillation frequency of 271 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.5
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• pp.471-482
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• 2015

In this paper, design and implementation of the 94 GHz Gunn oscillator and the evaluation of the maximum power of the Gunn diode used in the oscillator are presented. The 94 GHz Gunn oscillator is used InP Gunn diode and designed employing a WR-10 waveguide. The designed oscillator is fabricated through machining and its performance is measured. The fabricated oscillator shows an oscillation frequency of 95 GHz, output power of 12.64 dBm, and phase noise of -92.7 dBc/Hz at 1 MHz offset frequency. To evaluation the maximum power of the InP Gunn diode used in oscillator, the oscillator structure is modified to a structure having a diaphram. The height of thick diaphram which is used in the oscillator is varied. As a result, an oscillator has several different load impedances, which makes it possible to plot $G_L-V^2$ plot at the post plane. Using the $G_L-V^2$ plot, the maximum power of used Gunn diode including post is computed to be 16.8 dBm. Furthermore using the shorted and zero bias Gunn diode, the post loss used for DC biasing can be computed. Using the two losses, The maximum power of a InP Gunn diode is computed to be 18.55 dBm at 95 GHz. This result is close to a datasheet.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.77-80
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• 2002

In this paper, InP-based HBTs have been optimally designed by numerical simulation and fabricated by the self-aligned process. The structure of HBT was designed in terms of the current gain*f$_{max}$ for the base and f$_{T}$*f$_{max}$ for the collector. The designed structure produced the current gain of about 50 and the cutoff frequency and the maximum oscillation frequency of 87GHz and 2940Hz respectively. In addition, we present a study of the vertical and lateral etching of InP with the mask sides parallel to the principal crystallographic axes, [0101 and (001). This etching characteristics arc used to fabricate self-aligned HBT structures with reduced parasitic effects.s.s.s.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.129-137
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• 1995

AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm$^{2}$, a breakdown volgate BVCEO of 8V, and the ideality factors of base and collector junctions of 1.6 and 1.1, respectively. On-wafer S-Parameter measurement at 0.5~18GHz has been made for the characterization of the common emitter HBTx with a 2umx10um size emitter. The extrapolated current gain cut-off frequency of ft=30GHz and maximum oscillation frequency of fmax=23 GHz were obtained at a collector current density of Jc=70kA/cm$^{2}$. Small signal HBT equivalent circuit was extracted from the S-Parameter data.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2000.06a
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• pp.1455-1460
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• 2000

When a tube is oscillated at a resonant frequency, acoustic variables such as density, velocity, and pressure undergo very large perturbation, often described as nonlinear oscillation. In order to analyze these phenomena, nonlinear governing equation has been drived and solved numerically. Numerical simulations were accomplished to study the effect of the tube shape on the maximum pressure we can obtain. The tubes of cylindrical, conical, and cosine-shape, which have same volume and length, were investigated. Results show that the resonant frequency and patterns of pressure waves strongly depend on not only the tube shape but also the amplitude of driving acceleration. The degree of non-linearity of wave patterns was also measured by the newly defined nonlinear energy ratio of the pressure signals. It was found that the 1/2 cosine-shape tube is more suitable to induce high compression ratio than other shapes.