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http://dx.doi.org/10.5515/JKIEES.2013.13.2.127

Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors  

Ko, Pil-Seok (Division of Electronics and Electrical Engineering, Dongguk University)
Park, Hyung-Moo (Division of Electronics and Electrical Engineering, Dongguk University)
Publication Information
Journal of electromagnetic engineering and science / v.13, no.2, 2013 , pp. 127-133 More about this Journal
Abstract
We examined the scaling effects of a number of gate_fingers (N) and gate_widths (w) on the high-frequency characteristics of $0.1-{\mu}m$ metamorphic high-electron-mobility transistors. Functional relationships of the extracted small-signal parameters with total gate widths ($w_t$) of different N were proposed. The cut-off frequency ($f_T$) showed an almost independent relationship with $w_t$; however, the maximum frequency of oscillation ($f_{max}$) exhibited a strong functional relationship of gate-resistance ($R_g$) influenced by both N and $w_t$. A greater $w_t$ produced a higher $f_{max}$; but, to maximize $f_{max}$ at a given $w_t$, to increase N was more efficient than to increase the single gate_width.
Keywords
Scaling Rule; HEMT; Small-Signal Parameters; Gate Width;
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1 Y. Cordier, S. Bollaert, M. Zaknoune, J. Dipersio, and D. Ferre, "InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate: influence of indium content on material properties and device performance," Japanese Journal of Applied Physics, vol. 38, no. 2B, pp. 1164-1168, Feb. 1999.   DOI
2 K. Chang, I. Bahl, and V. Nair, "Power amplifiers," in RF and Microwave Circuit and Component Design for Wireless Systems, 1st ed. New York, NY: Wiley, 2002, pp. 405-406.
3 M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Bohm, G. Trankle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron Device Letters, vol. 17, no. 6, pp. 273-275, Jun. 1996.   DOI   ScienceOn
4 F. Medjdoub, S. Vandenbrouck, C. Gaquiere, E. Delos, M. Zaknoune, and D. Theron, "Power measurement setup for large signal microwave characterization at 94 GHz," IEEE Microwave and Wireless Components Letters, vol. 16, no. 4, pp. 218-220, Apr. 2006.   DOI   ScienceOn
5 L. Shen, S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars, and U. K. Mishra, "GaN/AlN/GaN high-power microwave HEMT," IEEE Electron Device Letters, vol. 22, no. 10, pp. 457-459, Oct. 2001.   DOI   ScienceOn
6 D. Ducatteau, A. Minko, V. Hoel, E. Morvan, E. Delos, B. Grimbert, H. Lahreche, P. Bove, C. Gaquiere, J. C. De Jaeger, and S. Delage, "Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate," IEEE Electron Device Letters, vol. 27, no. 1, pp. 7-9, Jan. 2006.   DOI   ScienceOn
7 W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, and I. Omura, "Recessed-gate structure approach toward normally off high-volgate AlGaN/GaN HEMT for power electronics applications," IEEE Transactions on Electron Devices, vol. 53, no. 2, pp. 356-362, Feb. 2006.   DOI   ScienceOn
8 S. Karmalkar and U. K. Mishra, "Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using field plate," IEEE Transactions on Electron Devices, vol. 48, no. 8, pp. 1515-1521, Aug. 2001.   DOI   ScienceOn
9 G. Meneghesso, A. Neviani, R. Oesterholt, M. Matloubian, T. Liu, J. J. Brown, C. Canali, and E. Zanoni, "On-state and off-state breakdown in GaInAs/ InP composite channel HEMT's with variable Ga-InAs channel thickness," IEEE Trans. Electron Devices, vol. 46, no. 1, pp. 2-9, Jan. 1999.   DOI   ScienceOn
10 Y. C. Chen, P. Chin, D. Ingram, R. Lai, R. Grundbacher, M. Barsky, T. Block, M. Wojtowicz, L. Tran, V. Medvedev, H. C. Yen, D. C. Streit, and A. Brown, "Composite-channel InP HEMT for Wband power amplifiers," in Proceedings of the 11th International Conference on Indium Phosphide and Related Materials, Davos, Switzerland, 1999, pp. 305-306.
11 S. J. Nash, A. Platzker, and W. Struble, "Distributed small signal model for multi-fingered GaAs PHEMT/MESFET devices," IEEE MTT-S International Microwave Symposium Digest, San Franscisco, CA, 1996, pp. 1075-1078.
12 J. H. Lee, H. S. Yoon, C. S. Park, and H. M. Park, "Ultra low noise characteristics of AlGaAs/InGa-As/GaAs pseudomorphic HEMT's with wide head T-shaped gate," IEEE Electron Device Letters, vol. 16, no. 6, pp. 271-273, Jun. 1995.   DOI   ScienceOn
13 J. H. Oh, M. Han, S. W. Moon, S. G. Choi, Y. H. Back, J. K. Rhee, and S. D. Kim, "Radio frequency characteristics of multifinger $0.1{\mu}m$ metamorphic high-electron-mobility transistors depending on number of gate fingers and gate width," Japanese Journal of Applied Physics, vol. 46, no. 10A, pp. 6503-6508, Oct. 2007.   DOI
14 S. W. Chen, O. Aina, W. Li, L. Phelps, and T. Lee, "An accurately scaled small-signal model for interdigitated power P-HEMT up to 50 GHz," IEEE Transactions on Microwave Theory and Techniques, vol. 45, no. 5, pp. 700-703, May 1997.   DOI   ScienceOn
15 A. Caddemi, G. Crupi, and N. Donato, "A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs," Microelectronics Journal, vol. 35, no. 5, pp. 431-436, May 2004.   DOI   ScienceOn
16 C. Y. Chang and F. Kai, "High electron-mobility transistor," in GaAs High-Speed Devices: Physics, Tecnology, and Circuit Applications. New York, NY: Wiley, 1994, pp. 375-382.
17 M. B. Das, "A high aspect ratio design approach to millimeter-wave HEMT structures," IEEE Transactions on Electron Devices, vol. 32, no.1, pp. 11-17, Jan. 1985.   DOI   ScienceOn
18 G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Transactions and Microwave Theory and Techniques, vol. 36, no. 7, pp. 1151-1159, Jul. 1988.   DOI   ScienceOn
19 C. Gaquiere, B. Bonte, D. Theron, Y. Crosnier, and, J. Favre, "Analysis of the source inductance effect on the power performance of high development HEMTs in the Ka-band," IEEE Microwave and Guided Wave Letters, vol. 5, no. 8, pp. 243-254, Aug. 1995.   DOI   ScienceOn
20 Y. Kwon, M. Tutt, G. I. Ng, D. Pavlidis, T. Brock, P. Marsh, J. Oh, J. Castagne, and N. T. Linh, "Gate-recess and device geometry impact on the microwave performance and noise properties of $0.1 {\mu}m$InAlAs/InGaAs HEMT's," in Proceedings of IEEE/ Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, 1991, pp. 141-150.
21 H. Rohdin, N. Moll, C. Y. Su, and G. S. Lee, "Interfacial gate resistance in Schottky-barrier-gate field-effect transistors," IEEE Transactions on Electron Devices, vol. 45, no. 12, pp. 2407-2416, Dec. 1998.   DOI   ScienceOn
22 X. Jin, J. J. Ou, C. H. Chen, W. Liu, N. J. Deen, P. R. Cray, and C. Hu, "An effective gate resistance model for CMOS RF and noise modeling," IEEE International Electron Devices Meeting (IEDM Technical Digest), San Francisco, CA, 1998, pp. 961-964.
23 Y. C. Pao, C. Nishimoto, M. Riaziat, R. M. Ahy, N. G. Bechtel, and J. S. Harris, "Impact of surface layer on In/sub0.52/Al/sub0.48/As/In/sub 0.53/Ga/ sub 0.47/As/InP high electron mobility transistors," IEEE Electron Device Letters, vol. 11, no. 7, pp. 312-314, Jul. 1990.   DOI   ScienceOn
24 J. H. Oh, Y. H. Baek, B. O. Lim, S. W. Moon, S. J. Lee, J. K. Rhee, I. S. Hwang, and S. D. Kim, "Effects of gate-recess structure on high frequency characteristics of $0.1{\mu}m$ metamorphic HEMTs," Journal of the Electrochemical Society, vol. 154, no. 7, pp. H541-H546, Jul. 2007.   DOI   ScienceOn
25 N. I. Cameron, S. Murad, H. McLelland, A. Asenov, M. R. S. Taylor, M. C. Holland, and S. P. Beaumont, "Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs," Electronics Letters, vol. 32, no 8, pp. 770-772, Apr. 1996.   DOI   ScienceOn