• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.436-436
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• 2009

현재 상용화되어 있는 결정질 태양전지의 경우 높은 실리콘 가격으로 인해 저가화에 어려움을 격고 있다. 따라서 태양전지 저가화의 한 방법으로 박막태양전지가 주목을 받고 있다. P-I-N 구조의 박막태양전지에서 각 층의 thickness, activation energy, energy bandgap은 고효율 달성을 위한 중요한 요소이다. 본 논문에서는 박막태양전지 P-I-N layer의 가변을 통하여 고효율을 달성하기 위한 simulation을 수행하였다. 가변 조건으로는 p-layer의 thickness, activation energy 그리고 energy bandgap을 단계별로 변화시켰고 i-layer는 thickness를 n-layer는 thickness와 activation energy를 가변하여 최적의 조건을 찾아 분석하였다. 최종 simulation 결과 p-layer의 thickness 5nm, activation energy 0.3eV 그리고 energy bandgap 1.8eV에서, i-layer thickness 400nm, n-layer thickness 30nm, activation energy 0.2eV에서 최고 효율 11.08%를 달성하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.437-437
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• 2009

현재 상용화되어 있는 결정질 태양전지의 경우 높은 실리콘 가격으로 인해 저가화에 어려움을 격고 있다. 따라서 태양전지 저가화의 한 방법으로 박막태양전지가 주목을 받고 있다. P-I-N 구조의 박막태양전지에서 I-layer 각 층의 thickness, activation energy, energy bandgap은 고효율 달성을 위한 중요한 요소이다. 본 논문에서는 박막태양전지 P-I-N layer의 가변을 통하여 고효율을 달성하기 위한 simulation을 수행하였다. 가변 조건으로는 p-layer의 thickness, activation energy 그리고 energy bandgap을 단계별로 변화시켰고 i-layer는 thickness를 n-layer는 thickness와 activation energy를 가변하여 최적의 조건을 찾아 분석하였다. 최종 simulation 결과 p-layer의 thickness 5nm, activation energy 0.3eV 그리고 energy bandgap 1.8eV에서, i-layer thickness 400nm, n-layer thickness 30nm, activation energy 0.2eV에서 최고 효율 11.08%를 달성하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1118-1123
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• 2008

High voltage multilayer ceramic capacitors (MLCCs) are classified into two classes-those for temperature compensation (class I) and high dielectric constant materials (class II). We manufactured high voltage MLCC with temperature coefficient characteristics of C0G and X7R and studied the characteristics of electric properties. Also we studied the characteristics of dielectric breakdown voltage (V) as the variation of thickness in the green sheet and how to pattern the internal electrodes. The dielectric breakdown by electric field was caused by defects in the dielectric materials and dielectric/electrode interface, so the dielectric thickness increased, the withstanding voltage per unit (E) thickness decreased. To overcome this problem, we selected the special design like as floating electrode and this design affected the increasing breakdown voltage(V) and realized the constant withstanding voltage per unit thickness(E). From these results, high voltage application of MLCCs can be expanded and the rated voltage can also be develop.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.287-290
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• 1998

It was investigated that the dielectric properties of ferroelectric materials using PZT-5A and PZT thin films. PZT-5A was 20mm diameters, 0.71mm, 0.51mm and 0.41mm thickness respectively and having c-axis preferred orientation. Electrodes(Al) were deposited by evaporation method. PZT thin film was deposited on Pt/SiO$_2$/Si substrate by RF magnetron sputtering method, and annealed at 750$^{\circ}C$ with RTA. Dielectric constants were measured automatically by computer measuring system. Dielectric constants were changed rapidly from 817 to 888 in 0.41mm thickness PZT-5A, 823 to 890 in 0.51mm and 822 to 839 in 0.71mm as the electric field grown. In the case of PZT thin film, dielectric constants were changed from 724 to 1173 in 4500${\AA}$ thickness, 721 to 1204 in 5500${\AA}$ thickness and 811 to 1407 in 7000${\AA}$ thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.521-524
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• 2012

We report on variations of electrical properties with different active layer thickness and post-annealing temperature in amorphous In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). In particular, subthreshold swing (SS) of the IGZO-TFTs was improved as increasing the active layer thickness at an given post-annealing temperature, accompanying the negative shift in turn-off voltage. However, as increasing post-annealing temperature, only turn-off voltage was shifted negatively with almost constant SS value. The effect of the active layer thickness and post-annealing temperature on electrical properties, such as SS, field effect mobility and turn-off voltage in IGZO-TFTs has been explained in terms of the variation of trap density in IGZO channel layer and at gate dielectric/IGZO interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.32-35
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• 2011

Top-emission device has a merit of high aperture ratio and narrow emission spectrum compared to that of bottom-emission one. Emission spectra of top-emission organic light-emitting diodes depending on a layer thickness and view angle were analyzed using a theory of microcavity. Device structure was manufactured to be Al (100 nm)/TPD/$Alq_3$/LiF (0.5 nm)/Al (2 nm)/Ag (30 nm). N,N'-diphenyl-N,N'- di (m-tolyl)-benzidine (TPD) and tris (8-hydroxyquinoline) aluminium (Alq3) were used as a hole-transport layer and emission layer, respectively. And a thickness of TPD and Alq3 layer was varied in a range of 40 nm~70 nm and 60 nm~110 nm, respectively. Angle-dependent emission spectrum out of the device was measured with a device fixed on a rotating plate. Since the top-emission device has a property of microcavity, it was observed that the emission spectrum shift to a longer wavelength region as the organic layer thickness increases, and to a shorter wavelength region as the view angle increases. Layer thickness and view-angle dependent emission spectra of the device were analyzed in terms of microcavity theory. A reflectivity of semitransparent cathode and optical path length were deduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.88-88
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• 2008

In this study, effect of thickness on structural, electrical and optical properties of B doped ZnO:Ga (GZOB) films was investigated. GZOB films were deposited on glass substrates by DC magnetron sputtering. The thickness range of films were from 100 nm to 600 nm to identified as increasing thickness, stress between substrate and GZOB film. The average transmittance of the films was over 80 % until 500 nm. Then a resistivity of $9.16\times10^{-4}\Omega$-cm was obtained. We presented that a GZOB film of 400 nm was optimization to obtain a high transmittance and conductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.349-350
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• 2008

In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) /2,9-Dimethy 1-4,7-diphenyl-1,10-phenanthroline (BCP)/tris (8-hydroxyquinoline)aluminum$(Alq_3)$/Al device, we studied the efficiency improvement of organic light-emitting diodes due to thickness variation of BCP materials used for a electron breaking layer. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5\times10^{-6}$Torr using a thermal evaporation. The TPD and $Alq_3$ layer were evaporated to be at a deposition rate of 2.0 A/s. The BCP was evaporated to be at a deposition of 1.0 A/s. When the thickness of BCP increased from 5 to 30 nm, we found that the luminous efficiency and the external quantum efficiency is superior to the others when the thickness of BCP is 20 nm. Compared to the ones from the devices made without BCP, the luminous efficiency and the external quantum efficiency was improved by 57 %, 70%, respectively.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.4
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• pp.21-27
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• 2015

Induction bending is a method that allows the bending of any material that conducts electricity. This technology applies a bending force to a material that has been locally heated by an eddy current induced by a fluctuating electromagnetic field. Induction bending uses an inductor to locally heat steel through induction. This results in a narrow heat band in the shape to be bent. In general, the reduction of thickness attenuation of a large-diameter steel pipe is not allowed to exceed 12.5%. In this paper, in order to meet the standard of thickness attenuation reduction, a non-uniform heating temperature jump-bending process was investigated. As a result, the developed bending technique meets the requirements of thickness attenuation reduction for large-diameter steel pipes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.620-624
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• 2016

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.