• Journal of Korea Society of Digital Industry and Information Management
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• v.10 no.4
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• pp.79-87
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• 2014

In this paper, we implemented the HearCAM platform with Raspberry PI B+ model which is an open source platform. Raspberry PI B+ model consists of dual step-down (buck) power supply with polarity protection circuit and hot-swap protection, Broadcom SoC BCM2835 running at 700MHz, 512MB RAM solered on top of the Broadcom chip, and PI camera serial connector. In this paper, we used the Google speech recognition engine for recognizing the voice characteristics, and implemented the pattern matching with OpenCV software, and extended the functionality of speech ability with SVOX TTS(Text-to-speech) as the matching result talking to the microphone of users. And therefore we implemented the functions of the HearCAM for identifying the voice and pattern characteristics of target image scanning with PI camera with gathering the temperature sensor data under IoT environment. we implemented the speech recognition, pattern matching, and temperature sensor data logging with Wi-Fi wireless communication. And then we directly designed and made the shape of HearCAM with 3D printing technology.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.8
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• pp.1239-1245
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• 2009

Currently, so many approaching methods are being developed to optimize the antenna size. In this paper, We fabricated Inverted-F type antenna attaching lumped components to solve the limitation of antenna size. Through experiments, a basic Inverted-F type antenna was fabricated and satisfied the adequate radiation pattern. After this, we researched the effect of antenna varied by matching circuit consist of chip type resistor, inductor, and capacitor. Using that elements, the antenna was matched at aim frequency. The proposed antenna's size is $7\;{\times}\;24\;mm$ that is very small size against the resonance frequence. Measuring the developed antenna, Its return loss was -18dB. Thus, this antenna can be used for Z-wave systems.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.1
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• pp.19-26
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• 2006

The ccrf-discharge has in comparison with the hollow-cathode discharge and DC-discharge some advantages: Simple design of the tube and homogeneous plasma. The ccrf-discharge was researched with the goal, to use on the excitation of the gas laser. In this work a rf-exciting system was planned and developed. With it a homogeneous discharge was produced in the cw operation. To supply the rf-power with the frequency 13.56[MHz] effectively in the discharge, laser tube were used with inner diameter of 5[mm] and the specially developed rf-electrodes. A matching circuit was composed also. Thereby the impedance of the discharge tube was adjusted to the 50[$\Omega$] output resistance of the rf-source.

• Journal of Information Display
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• v.11 no.4
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• pp.173-181
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• 2010

In this paper, light-emitting-diode (LED) backlight driving circuits and dimming method for medium-sized and large liquid crystal displays (LCDs) are proposed. The double loop control method, the intelligent-phase-shifted PWM dimming method, the fast-switching current regulator, and the current matching techniques are proposed to improve not only the current regulation characteristics and the power efficiency but also the current matching characteristics and the transient response of the LED current. The brightness of the backlight using the proposed local dimming method was determined from the histogram of the local block to reduce the power consumption of the backlight without image distortion. The measured maximum power efficiency of the LED backlight driving circuit for medium-sized LCDs was 90%, and the simulation results showed an 88% maximum power efficiency of the LED backlight driving circuit for large LCDs. The maximum backlight power-saving ratio of the proposed dimming method was 41.7% in the simulation with a high-contrast image. The experiment and simulation results showed that the performance of LEDs as LCD backlight units (BLUs) improved with the proposed circuits and method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.57-60
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• 2004

This paper presents multibit Sigma-Delta ADC using Leslie-Singh Structure to Improve nonlinearity of feedback loop. 4-bit flash ADC for multibit Quantization in Sigma Delta modulator offers the following advantages such as lower quantization noise, more accurate white-noise level and more stability over single quantization. For the feedback paths consisting of DAC, the DAC element should have a high matching requirement in order to maintain the linearity performance which can be obtained by the modulator with a multibit quantizer. Thus a Sigma-Delta ADC usually adds the dynamic element matching digital circuit within feedback loop. It occurs complexity of Sigma-Delta Circuit and increase of power dissipation. In this paper using the Leslie-Singh Structure for improving nonliearity of ADC. This structure operate at low oversampling ratio but is difficult to achieve high resolution. So in this paper propose improving loop filter for single-bit feedback multi-bit quantization Sigma-Delta ADC. It obtained 94.3dB signal to noise ratio over 615kHz bandwidth, and 62mW power dissipation at a sampling frequency of 19.6MHz. This Sigma Delta ADC is fabricated in 0.25um CMOS technology with 2.5V supply voltage.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.12
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• pp.41-45
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• 2015

In this paper, the single port dual-band resonator for magnetic resonance wireless power transfer is proposed. The proposed dual-band resonator is consists of 20 turns spiral coil, a single loop, matching circuit, lumped elements, and a single port. The two sides of the matching circuit are connected to via holes. The spiral coil is operated at MF-band and single loop is operated at HF-band, respectively. We use two of the same structure resonators and simulated and the power transfer efficiency was calculated. The efficiency of simulation and measurement is above 60% at the MF and HF bands, and the distance is 100 mm.

• Journal of electromagnetic engineering and science
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• v.7 no.4
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• pp.147-153
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• 2007

This paper represents an analog predistortion linearizer for the high power amplifier with low memory effect. The high power amplifier is implemented using a 90-W peak envelope power(PEP) LDMOSFET at 2.14-GHz and an envelope short matching topology is applied at the active ports to minimize the memory effect. The analog predistortion circuit comprises the fundamental path and the cuber and quintic generating circuits, whose amplitudes and phases can be controlled independently. The predistortion circuit is tested for two-tone and wide-band code division multiple access(WCDMA) 4FA signals. For the WCDMA signal, the adjacent channel leakage ratios(ACLRs) at 5 MHz offset are improved by 12.4 dB at average output powers of 36 dBm and 42 dBm.

• ETRI Journal
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• v.27 no.5
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• pp.628-634
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• 2005

From AC analysis results utilizing a 2-dimensional device simulator, we extracted an AC-equivalent circuit of a grounded-gate NMOS (ggNMOS) electrostatic discharge (ESD) protection device. The extracted equivalent circuit is utilized to analyze the effects of the parasitics in a ggNMOS protection device on the characteristics of a low noise amplifier (LNA). We have shown that the effects of the parasitics can appear exaggerated for an impedance matching aspect and that the noise contribution of the parasitic resistances cannot be counted if the ggNMOS protection device is modeled by a single capacitor, as in prior publications. We have confirmed that the major changes in the characteristics of an LNA when connecting an NMOS protection device at the input are reduction of the power gain and degradation of the noise performance. We have also shown that the performance degradation worsens as the substrate resistance is reduced, which could not be detected if a single capacitor model is used.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.136-140
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• 1990

A hybrid wideband amplifier having bandwidth from 5MHz to 2000MHz with a gain of 10db$\pm$3dB is designed and implemented by using a lossy matched network and GaAs FET. The implemented amplifier circuit operates as a capacitor-resistor(C-R) coupled amplifier circuit in the low frequency range (below 800 MHz) in which {{{{ LEFT $\mid$ S_{21 } RIGHT $\mid$ }} for the GaAs FET is constant. It also operates as a lossless impedance matching circuit in the microwave frequency range in which S21 for the GaAs FET has a slope of approximately -6dB/octave. Using this configuration technique, Two stage GaAs FET amplifier implemented is measured to 10dB gain within a 3dB fluctuation over the frequency band from 5 to 2000MHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.509-516
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• 2008

Multi-layer circuit card for semiconductor inspection was fabricated by LTCC technology. After a proper impedance design without electrical interference, ceramic tapes with the composition of $CaO-Al_2O_3-SiO_2-B_2O_3$ glass and $Al_2O_3$ were prepared. The electrode with silver paste printed on the tape. Printed ceramic sheets were then laminated and sintered. Densities and dielectric properties were measured. The microstructure, fracture surface of the region of via and matching state of substrate-electrode were observed. The durability of plated outside electrode were examined by hardness and scratch test.