• 제목/요약/키워드: Mass Memory

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Mass Memory Operation for Telemetry Processing of LEO Satellite (저궤도위성 원격측정 데이터 처리를 위한 대용량 메모리 운용)

  • Chae, Dong-Seok;Yang, Seung-Eun;Cheon, Yee-Jin
    • Aerospace Engineering and Technology
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    • v.11 no.2
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    • pp.73-79
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    • 2012
  • Because the contact time between satellite and ground station is very limited in LEO (Low Earth Orbit) satellite, all telemetry data generated on spacecraft bus are stored in a mass memory and downlinked to the ground together with real time data during the contact time. The mass memory is initialized in the first system initialization phase and the page status of each memory block is generated step by step. After the completion of the system initialization, the telemetry data are continuously stored and the stored data are played back to the ground by command. And the memory scrubbing is periodically performed for correction of single bit error which can be generated on harsh space environment. This paper introduces the mass memory operation method for telemetry processing of LEO satellite. It includes a general mass memory data structure, the methods of mass memory initialization, scrubbing, data storage and downlink, and mass memory management of primary and redundant mass memory.

Performance Improvement of Asynchronous Mass Memory Module Using Error Correction Code (에러 보정 코드를 이용한 비동기용 대용량 메모리 모듈의 성능 향상)

  • Ahn, Jae Hyun;Yang, Oh;Yeon, Jun Sang
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.3
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    • pp.112-117
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    • 2020
  • NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.

The Conceptual Design of Mass Memory Unit for High Speed Data Processing in the STSAT-3 (고속 데이터 처리를 위한 과학기술위성 3호 대용량 메모리 유닛의 개념 설계)

  • Seo, In-Ho;Oh, Dae-Soo;Myung, Noh-Hoon
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.38 no.4
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    • pp.389-394
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    • 2010
  • This paper describes the conceptual design of mass memory unit for high speed data processing and mass memory management in the STSAT-3 compared to that of STSAT-2. The FPGA directly controls the data receiving from two payloads with the maximum 100Mbps speed and 32Gb mass memory management to satisfy these requirements. We used SRAM-based FPGA from XILINX having fast operating speed and large logic cells. Therefore, the Triple Modular Redundancy(TMR) and configuration memory scrubbing techniques will also be used to protect FPGA from Single Event Upset(SEU) in space.

SEU Mitigation Strategy and Analysis on the Mass Memory of the STSAT-3 (과학기술위성 3호 대용량 메모리에서의 SEU 극복 및 확률 해석)

  • Kwak, Seong-Woo
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.45 no.4
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    • pp.35-41
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    • 2008
  • When memory devices are exposed to a space environment. they suffer various effects such as SEU(Single Event Upset). For these reasons, memory systems for space applications are generally equipped with error detection and correction(EDAC) logics against SEUs. In this paper, the error detection and correction strategy in the Mass Memory Unit(MMU) of the STSAT-3 is discussed. The probability equation of un-recoverable SEUs in the mass memory system is derived when the whole memory is encoded and decoded by the RS(10,8) Reed-Solomon code. Also the probability value is analyzed for various occurrence rates of SEUs which the STSAT-3 possibly suffers. The analyzed results can be used to determine the period of scrubbing the whole memory, which is one of the important parameters in the design of the MMU.

Analysis and Comparison of Error Detection and Correction Codes for the Memory of STSAT-3 OBC and Mass Data Storage Unit (과학기술위성 3호 탑재 컴퓨터와 대용량 메모리에 적용될 오류 복구 코드의 비교 및 분석)

  • Kim, Byung-Jun;Seo, In-Ho;Kwak, Seong-Woo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.2
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    • pp.417-422
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    • 2010
  • When memory devices are exposed to space environments, they suffer various effects such as SEU(Single Event Upset). Memory systems for space applications are generally equipped with error detection and correction(EDAC) logics against SEUs. In this paper, several error detection and correction codes - RS(10,8) code, (7,4) Hamming code and (16,8) code - are analyzed and compared with each other. Each code is implemented using VHDL and its performances(encoding/decoding speed, required memory size) are compared. Also the failure probability equation of each EDAC code is derived, and the probability value is analyzed for various occurrence rates of SEUs which the STSAT-3 possibly suffers. Finally, the EDAC algorithm for STSAT-3 is determined based on the comparison results.

Seismic response control of buildings using shape memory alloys as smart material: State-of-the-Art review

  • Eswar, Moka;Chourasia, Ajay;Gopalakrishnan, N.
    • Earthquakes and Structures
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    • v.23 no.2
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    • pp.207-219
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    • 2022
  • Seismic response control has always been a grave concern with the damage and collapse of many buildings during the past earthquakes. While there are several existing techniques like base isolation, viscous damper, moment-resisting beam-column connections, tuned mass damper, etc., many of these are succumbing to either of large displacement, near-fault, and long-period earthquakes. Keeping this viewpoint, extensive research on the application of smart materials for seismic response control of buildings was attempted during the last decade. Shape Memory Alloy (SMA) with its unique properties of superelasticity and shape memory effect is one of the smart materials used for seismic control of buildings. In this paper, an exhaustive review has been compiled on the seismic control applications of SMA in buildings. Unique properties of SMA are discussed in detail and different phases of SMA along with crystal characteristics are illustrated. Consequently, various seismic control applications of SMA are discussed in terms of performance and compared with prevalent base isolators, bracings, beam-column connections, and tuned mass damper systems.

A Survey of the Index Schemes based on Flash Memory (NAND 플래쉬메모리 기반 색인에 관한 연구)

  • Kim, Dong-Hyun;Ban, Chae-Hoon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.10
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    • pp.1529-1534
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    • 2013
  • Since a NAND-flash memory is able to store mass data in a small sized chip and consumes low power, it is exploited on various hand-held devices, such as a smart phone and a sensor node, etc. To process efficiently mass data stored in the flash memory, it is required to use an index. However, since the write operation of the flash memory is slower than the read operation and an overwrite operation is not supported, the usage of existing index schemes degrades the performance of the index. In this paper, we survey the previous researches of index schemes for the flash memory and classify the researches by the methods to solve problems. We also present the performance factor to be considered when we design the index scheme on the flash memory.

3D SDRAM Package Technology for a Satellite (인공위성용 3차원 메모리 패키징 기술)

  • Lim, Jae-Sung;Kim, Jin-Ho;Kim, Hyun-Ju;Jung, Jin-Wook;Lee, Hyouk;Park, Mi-Young;Chae, Jang-Soo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.25-32
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    • 2012
  • Package for artificial satellite is to produce mass production for high package with reliability certification as well as develop SDRAM (synchronous dynamic RAM) module which has such as miniaturization, mass storage, and high reliability in space environment. It requires sophisticated technology with chip stacking or package stacking in order to increase up to 4Gbits or more for mass storage with space technology. To make it better, we should secure suitable processes by doing design, manufacture, and debugging. Pin type PCB substrate was then applied to QFP-Pin type 3D memory package fabrication. These results show that the 3D memory package for artificial satellite scheme is a promising candidate for the realization of our own domestic technologies.

Engineering Model Design and Implementation of Mass Memory Unit for STSAT-2 (과학기술위성 2호 대용량 메모리 유닛 시험모델 설계 및 구현)

  • Seo, In-Ho;Ryu, Chang-Wan;Nam, Myeong-Ryong;Bang, Hyo-Choong
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.33 no.11
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    • pp.115-120
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    • 2005
  • This paper describes the design and implementation of engineering model(EM) of Mass Memory Unit(MMU) for Science and Technology Satellite 2(STSAT-2) and the results of integration test. The use of Field-Programmable Gate Array(FPGA) instead of using private electric parts makes a miniaturization and lightweight of MMU possible. 2Gbits Synchronous Dynamic Random Access Memory(SDRAM) module for mass memory is used to store payload and satellite status data. Moreover, file system is applied to manage them easily in the ground station. RS(207,187) code improves the tolerance with respect to Single Event Upset(SEU) induced in SDRAM. The simulator is manufactured to verify receiving performance of payload data.