• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.196-198
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• 1996

The manufacturing process of the amorphous transformer core consists of winding, cutting, forming, annealing. Clamping of cores during this process are required for shape forming. Clamping of cores enhances the space factor, but degrades the magnetic properties and core loss characteristics of the cores. In this study, we investigated the optimal clamping pressure required in magnetic field annealing of 5 kVA amorphous transformer core.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.4
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• pp.379-384
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• 1992

The Fe-base amorphous ribbons with 15mm width and about 20x10S0-6Tm thickness, (FeS179-xTCrS1xT)BS116TSiS15T and (FeS181-xTMnS1xT) BS112TSiS17T (x:0-6), were prepared melt spinner. The thickness of the ribbons followed by PFC (Planar Flow Casting). The initial permeability and total core losses were measured as a function of additive elements (Cr, Mn) and annealing conditions in high frequency for the purpose of using these materials as a core of magnetic amplifier and switched mode power supplies. The initial permeabilities were enhanced and core losses were decreased by non-magnetic field annealing in proper conditions. The lowest core loss in 0.2T/10kHz was measured at 3% Cr addition amorphous ribbon, and the loss was 5.6W/kg. The permeability of the ribbon at 10kHz was about 9000.

• Journal of Magnetics
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• v.14 no.4
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• pp.144-146
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• 2009

This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]$_N$ multilayers were prepared at room temperature to form a $L1_0$-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at $300{^{\circ}C}$ for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature $L1_0$- FePt deposition process, which will be essential for future extremely high density magnetic recording media.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.7-10
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• 1992

CoNiCr/Cr and CoCrTa/Cr for longitudinal magnetic recording media were. prepared on Coming 7059 glass by RF magnetron sputtering. The thickness of Cr underlayer was varied from 500 to $3000{\AA}$ and. that of magnetic layer was $700{\AA}$. Coercivity and squareness were measured using V.S.M.(vibrating sample magnetometer). The coercivity of films increased with increasing Cr thickness when the films were unannealed. The coercivity of the films annealed in a 10 mtorr vacuum increased initially with annealing time and then saturated with further increase in annealing time. The coercivity value difference between the unannealed and annealed films increased with increasing the thickness of Cr underlayer No significant change was found in squareness after anneal, regardless of Cr underlayer thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• Journal of Magnetics
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• v.6 no.4
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• pp.126-128
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• 2001

The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300$\^{C}$, reaching ∼46%. A TEM image reveals a structural change in the interface of A1$_2$O$_3$layer for the MTJ annealed by RTA at 300$\^{C}$. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the magnetoresistive properties of MTJs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.120-122
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• 1994

We examined the magnetic properties as a function of annealing temperature of the as-quenched $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy. The values of $H_{c}$=30m0e, $B_{a}$=0.44T and ${\mu}$i=146000 at $300^{\circ}C$ annealing treatment are obtained. The excel lent soft magnetic properties seem to result from the annihilation of quenching-Induced internal stress by the heat treatment and the change of microstructure due to the different relaxation behavior owing to adding insoluble element such as Ag. Therefore, the $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy is quite promising for practical use as a core material in various transformers of high transformers of high frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• Journal of the Korean Vacuum Society
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• v.14 no.1
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• pp.24-28
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• 2005

A typical method for obtaining poly-Si films is the solid phase crystallization(SPC) of amorphous Si. Advantages of SPC are uniformity, process quality and low cost of production. However, high process temperature and long process time prevent the employment of SPC process on thermally susceptible glass substrate. In this parer, we propose a new method that applies an alternating magnetic field during crystallization annealing in an alternating magnetic field crystallization(AMFC) system for lowering process temperature and shorter process time of SPC. When we crystallized, in the case of SPC, annealing time is 24 hours at 570℃. But in the case of AMFC, annealing time is only 20 minutes at the same temperature.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.191-195
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• 2000

With the object of developing a non-gap choke core, effects of annealing in oxygen atmosphere on magnetic properties for Fe$_{78}$Si$_{9}$B$_{13}$ amorphous alloy were investigated. After annealing for 2 hrs at 440 $^{\circ}C$, optimum magnetic properties for choke core were obtained, where the effective permeability was 180 and was almost constant up to several MHz, and the decrease in permeability upon large DC bias current of 12 A or DC bias magnetic field of 8,000 A/m was very little. Moreover the AC magnetic loss was very low as compared to the conventional choke cores. Upon the optimum annealing, the magnetic hysteresis loop was inclined accompanying the increase of coercive force and the appearance of fine crystallites of $\alpha$-Fe phase. The good choke core properties was considered to be due to the suppression of domain boundary motion and domain refinement by the crystallites.