Journal of Magnetics

The Korean Magnetics Society (한국자기학회)
권호 표지

Effects of Rapid Thermal Anneal on the Magnetoresistive Properties of Magnetic Tunnel Junction

  • Lee, K.I. (Korea Institute of Science and Technology) ;
  • Lee, J.H. (Korea Institute of Science and Technology, Dept. of Physics, Korea University) ;
  • K. Rhie (Korea Institute of Science and Technology, Dept. of Physics, Korea University) ;
  • J.G. Ha (Dept. of Electroinc materials Engineering, Kwangwoon University) ;
  • K.H. Shin (Korea Institute of Science and Technology)
  • Published : 2001.12.01
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Abstract

The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300$\^{C}$, reaching ∼46%. A TEM image reveals a structural change in the interface of A1$_2$O$_3$layer for the MTJ annealed by RTA at 300$\^{C}$. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the magnetoresistive properties of MTJs.

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References

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