• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 A
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• pp.196-198
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• 1996

The manufacturing process of the amorphous transformer core consists of winding, cutting, forming, annealing. Clamping of cores during this process are required for shape forming. Clamping of cores enhances the space factor, but degrades the magnetic properties and core loss characteristics of the cores. In this study, we investigated the optimal clamping pressure required in magnetic field annealing of 5 kVA amorphous transformer core.

• 대한전기학회논문지
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• 제41권4호
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• pp.379-384
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• 1992

The Fe-base amorphous ribbons with 15mm width and about 20x10S0-6Tm thickness, (FeS179-xTCrS1xT)BS116TSiS15T and (FeS181-xTMnS1xT) BS112TSiS17T (x:0-6), were prepared melt spinner. The thickness of the ribbons followed by PFC (Planar Flow Casting). The initial permeability and total core losses were measured as a function of additive elements (Cr, Mn) and annealing conditions in high frequency for the purpose of using these materials as a core of magnetic amplifier and switched mode power supplies. The initial permeabilities were enhanced and core losses were decreased by non-magnetic field annealing in proper conditions. The lowest core loss in 0.2T/10kHz was measured at 3% Cr addition amorphous ribbon, and the loss was 5.6W/kg. The permeability of the ribbon at 10kHz was about 9000.

• Journal of Magnetics
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• 제14권4호
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• pp.144-146
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• 2009

This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]$_N$ multilayers were prepared at room temperature to form a $L1_0$-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at $300{^{\circ}C}$ for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature $L1_0$- FePt deposition process, which will be essential for future extremely high density magnetic recording media.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.7-10
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• 1992

CoNiCr/Cr and CoCrTa/Cr for longitudinal magnetic recording media were. prepared on Coming 7059 glass by RF magnetron sputtering. The thickness of Cr underlayer was varied from 500 to $3000{\AA}$ and. that of magnetic layer was $700{\AA}$. Coercivity and squareness were measured using V.S.M.(vibrating sample magnetometer). The coercivity of films increased with increasing Cr thickness when the films were unannealed. The coercivity of the films annealed in a 10 mtorr vacuum increased initially with annealing time and then saturated with further increase in annealing time. The coercivity value difference between the unannealed and annealed films increased with increasing the thickness of Cr underlayer No significant change was found in squareness after anneal, regardless of Cr underlayer thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• Journal of Magnetics
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• 제6권4호
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• pp.126-128
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• 2001

The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300$\^{C}$, reaching ∼46%. A TEM image reveals a structural change in the interface of A1$_2$O$_3$layer for the MTJ annealed by RTA at 300$\^{C}$. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the magnetoresistive properties of MTJs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.120-122
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• 1994

We examined the magnetic properties as a function of annealing temperature of the as-quenched $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy. The values of $H_{c}$=30m0e, $B_{a}$=0.44T and ${\mu}$i=146000 at $300^{\circ}C$ annealing treatment are obtained. The excel lent soft magnetic properties seem to result from the annihilation of quenching-Induced internal stress by the heat treatment and the change of microstructure due to the different relaxation behavior owing to adding insoluble element such as Ag. Therefore, the $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy is quite promising for practical use as a core material in various transformers of high transformers of high frequency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• 한국진공학회지
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• 제14권1호
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• pp.24-28
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• 2005

a-Si을 poly-Si으로 결정화하는 전형적인 방법으로는 고상결정화(Solid Phase Crystallization, SPC)가 있다［1-3］. 고상결정화는 균일한 공정특성과 생산비가 저렴하다는 장점이 있으나, 고상결정화 공정에서 높은 공정온도와 긴 공정 시간은 유리 기판의 손상으로 인해 적용되기 어렵다. 본 논문에서는 고상결정화의 저온공정과 짧은 공정시간을 위해 교번자장결정화(Alternating Magnetic Field Crystallization, AMFC) 시스템 내에서 결정화하는 동안 교번자장(Alternating Magnetic Field)을 적용하는 새로운 방법을 소개한다. 고상결정화의 경우, 열처리 시간은 570℃에서 24시간이 소요되었으나, 교번자장결정화의 경우, 같은 온도에서 20분이 소요되었다.

• 한국자기학회지
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• 제10권5호
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• pp.191-195
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• 2000

Fe$_{78}$Si$_{9}$B$_{13}$ 비정질 합금을 스위칭 전원의 평활용 쵸크 코어로 사용하기 위한 최적 열처리 조건을 조사하였다. 코어의 모양은 자기경로 상에 공극을 넣지 않는 무공극형으로 하였으며, 보다 효과적으로 쵸크 코어 특성을 얻기 위해 산화 분위기 중에서 열처리하였다. 이 합금에서 가장 양호한 쵸크 코어 특성은 44$0^{\circ}C$, 2시간의 열처리에 의하여 얻어졌으며, 그 때의 실효투자율은 180 정도로서 수 MHz의 높은 주파수 영역에 이르기까지 그 크기가 일정하게 유지되었다. 또 12A가지의 직류 바이어스 전류 또는 8,000 A/m의 직류 바이어스 자장을 가하여도 실효투자율의 저하가 나타나지 않는 우수한 직류중첩 특성을 나타내었다. 그리고 교류 자심 손실도 종래의 쵸크 코어에 비해 상당히 낮은 것으로 나타났다. 이와 같은 열처리 조건하에서 비정질상은 미세한 $\alpha$-Fe 결정상의 석출 입자를 포함하는 혼합상으로 변태하는데 , 상기의 쵸크코어 특성은 주로 이들 미세 결정 입자에 의해 효과적으로 자벽 이동이 억제되고 자구가 미세화 되는 것에 기인하는 것으로 생각되었다.