• Journal of Information Management
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• v.34 no.4
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• pp.63-84
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• 2003

This research is a case study that describes the NUCLIS21(Nuclear Information System 21), an integrated web-based information management system of KAERI(Korea Atomic Energy Research Institute), implemented to carry out the role of a national nuclear information center with government support as an information infra implementation programme. Through its user-centered single interface, the system aims at building an infrastructure for the national nuclear information center, as well as improving the information management system of the TID(Technical Information Department) within the institute. The system consists of two major parts which are an integrated module of the MIS and six different kinds of system. These include the Integral search system with OPAC, My Library, the Acquisition system, the Catalogue system, the Information Supply system, and the Serial Publication system. The DB is composed of Bibliographical DB, Original text DB and Abstract DB. A special feature of this system was designed as a unified network system through connection to MIS(Management Integration System) of the institute, so users can get research information for projects. Therefore, they have access to available information easily and access to the ongoing service of this system. Furthermore, users can share information by using our system. The survey has it that 75.7%(200 persons), 62.1%(164 persons) and 78.4%(207 persons) of the respondents are satisfied with the fidelity, speediness, and convenience of the system respectively, and the overall satisfaction of the respondents is comparably high.

• The Journal of Information Technology
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• v.7 no.4
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• pp.9-20
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• 2004

Result Dos that materialization KNU Virus Wall to solve serious problem Hurtfulness Virus is present network chiefly in this research to do not become and do correct disposal in situation such as internet and Multiple Protocol that is done intelligence anger for ESM, CIS and MIS side as secondary to solve this problem about out log analysis system embody. As a result, could use comprehensively, and can click by Site Design, Packet transmission, and used to interior internet (GroupWare) in information protection aspect because intelligence enemy to face each other ESM's various hacking and virus uses Enterprise Security Management system and CIS, whole web through Smart View and relation of security could do monitoring.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.12
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• pp.755-760
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• 1999

Various fluoride films were investigated for a gate insulator of thin film transistor application. Conventional oxide containing materials like $SiO_2\;Ta_2O_5\; and \; Al_2O_3$ exhibited high interface states which lead to an increased threshold voltage and poor stability of TFT. In this paper, we investigated gate insulators using a binary matrix system of fluoride such as $CaF_2,\; SrF_2\; MgF_2,\; and\; BaF_2$. These materials exhibited an improvement in lattice mismatch, interface state and electrical stability. MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 5%, breakdown electric field higher than 1.2MV/cm and leakage current density of $10^{-7}A/cm^2$. MIS diode having $Ca_2$ film as an insulation layer exhibited the interface states as low as $1.58\times10^{11}cm^{-2}eV^{-1}$. This paper probes a possibility of new gate insulator materials for TFT applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.470-475
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• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

• Journal of The Geomorphological Association of Korea
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• v.25 no.2
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• pp.43-61
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• 2018

Heterogeneous sedimentary deposits with different soil colors and various degree of hardness are exposed in its foredune and tidal zone due to the effects of recently accelerated coastal erosion along the Ujeon Coast in Jeung-do, Shinan-gun. This study was conducted on the assumption that these sedimentary deposits were developed in different timing and environments. Thus, we can infer the geomorphic development processes of the area based on evidences like the physicochemical characteristics of each sedimentary layer. Several analysis of these sedimentary depositssuch as grain size analysis, X-ray Fluorescence Measurement (XRF), and Loss on ignition (LOI) were performed on central (Ujeon A) and southern (Ujeon B) parts of the Ujeon Coast. I found that the foredune sedimentary deposits have four stages of geomorphic development processes. In the initial stage of development, during the peak of the Last Interglacial Period (MIS 5e), basal deposits were accumulated in the low-energy environment of subtidal zones. In the second stage, during the Last Glacial Period (MIS 4~MIS 2), eolian sedimentary layers were developed by terrestrial aeolian processes by which fine materials were transported from the Yellow Sea which became a dry land exposed by lowered sea level. In the third stage, various mechanism existed for the formation of each sedimentary layer. In the region of Ujeon A, sedimentary layers were developed in the littoral zone environment dominated by marine processes during the maximum phase of transgression in the Holocene. Meanwhile, the region of Ujeon B began to form eolian sedimentary layers during MIS 2. In the last stage, thick coastal dune deposits, covered all over the Ujeon Coast. During the late Holocene (0.7~0.6 ka), terrestrial processes kept dominating the region, developing typical eolian sedimentary layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.394-399
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• 2016

The silicon dioxide ($SiO_2$) was deposited using various gas as oxygen and nitrous oxide ($N_2O$) in nowadays. In order to improve electrical characteristics and the interface state density ($D_{it}$) in low temperature, It was deposited with carbon dioxide ($CO_2$) and silane ($SiH_4$) gas by inductively coupled plasma chemical vapor deposition (ICP-CVD). Each $D_{it}$ of $SiO_2$ using $CO_2$ and $N_2O$ gas was $1.30{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$ and $3.31{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$. It showed $SiO_2$ using $CO_2$ gas was about 2.55 times better than $N_2O$ gas. After 10 years when the thin film was applied to metal/insulator/semiconductor(MIS)-nonvolatile memory(NVM), MIS NVM using $SiO_2$($CO_2$) on tunneling layer had window memory of 2.16 V with 60% retention at bias voltage from +16 V to -19 V. However, MIS NVM applied $SiO_2$($N_2O$) to tunneling layer had 2.48 V with 61% retention at bias voltage from +20 V to -24 V. The results show $SiO_2$ using $CO_2$ decrease the $D_{it}$ and it improves the operating voltage.

• Journal of Digital Convergence
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• v.17 no.7
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• pp.49-58
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• 2019

Major objective of the study are to analyze the trends of domestic research on pure play internet banks and to propose the future research directions of the ares. To achieve the objectives, this study first summarize the basic concepts and current status of pure play internet banks, establish analysis criteria, and analyze 56 papers based on the criteria. Major research results and future research directions are summarized as follows: non-empirical research should utilize mathematical/conceptual model rather than opinion/guidance, and empirical research should employ secondary data analysis method; in case of the individual level analysis, research on the bank personnel, and on use/outcome of customers should be performed; more organizational level studies should be performed; and in case of societal level research, impact of the pure play internet banks should be analyzed in depth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.133-134
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• 2008

이 논문에서는 $SiN_x$의 band gap 차이를 이용하여 MIS 구조의 메모리 소자를 제작하고 이를 분석하였다. $SiN_x$ 박막은 증착 가스비에 따라 다양한 band gap을 가지게 된다. 본 실험에서는 n-type 단결정 실리콘 기판위에 $SiH_4/NH_3$ 가스를 혼합하여 $SiN_x$ 박막을 증착하고, UV-Vis Spectrophotometer 장비를 이용하여 band gap을 구하였다. 큰 band gap을 갖는$SiN_x$ 박막을 블로킹 층에, 작은 band gap을 작는 $SiN_x$ 박막을 전하 저장 층에 사용하였다. 제작된 NNO 구조일 소자는 7.6 V의 hysteresis roof 폭과 1000초 후에 88.6 %의 retention 값을 갖는 우수한 메모리 특성을 보였다.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.7
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• pp.29-36
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• 1998

In this paper we propose a control law using a Lyapunov-like function that makes stable the systems which have mis-matched uncertainties. The existing control law using a Lyapunov-like function, which gives global saymptotic stability, is designed under the assumption of a targetsystem to be stable locally. But we broaden here the class of target systems by designing the control law which can give uniform ultimate boundedness to even the systems not satisfing the locally asymptotic stability. And we also show that the control law giving global asymptotic stability can be designed more systematically through using the uniform ultimate boundedness.