The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

The Study of Fluoride Film Properties for Thin Film Transistor Gate Insulator Application

박막트랜지스터 게이트 절연막 응용을 위한 불화막 특성연구

  • 김도영 (성균관대 전기전자컴퓨터학과) ;
  • 최석원 (성균관대 전기전자컴퓨터학과) ;
  • 안병재 (성균관대 전기전자컴퓨터학과) ;
  • 이준신 (성균관대 전기전자컴퓨터학과)
  • Published : 1999.12.01
Download PDF
⟨ Previous Next ⟩

Abstract

Various fluoride films were investigated for a gate insulator of thin film transistor application. Conventional oxide containing materials like $SiO_2\;Ta_2O_5\; and \; Al_2O_3$ exhibited high interface states which lead to an increased threshold voltage and poor stability of TFT. In this paper, we investigated gate insulators using a binary matrix system of fluoride such as $CaF_2,\; SrF_2\; MgF_2,\; and\; BaF_2$. These materials exhibited an improvement in lattice mismatch, interface state and electrical stability. MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 5%, breakdown electric field higher than 1.2MV/cm and leakage current density of $10^{-7}A/cm^2$. MIS diode having $Ca_2$ film as an insulation layer exhibited the interface states as low as $1.58\times10^{11}cm^{-2}eV^{-1}$. This paper probes a possibility of new gate insulator materials for TFT applications.

Keywords

References

  1. 전기학회논문지 v.45 no.4 두 단계 열처리에 의해 제작된 다결정 실리콘 박막트랜지스터의 전기적 특성의 분석 최권영;한민구;김용상
  2. Jpn. J. Appl. Phys. v.29 no.1 Amorphous Silicon Thin-Film Transistors Employing Photoprocessed Tantalum Oxide Films as Gate Insulators M. Matsui;H. Nagayoshi;G. Muto;S. Tanimoto;K. Kuroiwa;Yasuo Tarui
  3. Jpn. J. Appl. v.31 Plasma-Enhanced Chemical Vapor Deposition of Silicon Nitride I. Kobayashi;T. Ogawa;S. Hotta
  4. 전기전자재료학회논문지 v.11 no.12 CaF₂박막의 전기적, 구조적 특성 김도영;최석원;이준신
  5. Thin Solid Films v.187 Fluoride/Semiconductor and Semiconductor/Fluoride/Semiconductor Heteroepitaxial structure research : A review S. Sinharoy
  6. Solid State Electronic Devices(Fourth edition) Ben G. Streetman
  7. Thin Solid Film v.93 An Epitaxial Si/Insulator/Si Structure Prepared by Vacuum Deposition of CaF₂and Silicon T. Asano;H Ishiwara
  8. Thin Solid Films v.304 Preparation and characterization of MgF₂thin film by a trifluoroacetic methode S. Fujihara;M. Tada;T. Kimura
  9. J. Vac. Sci. Technol. B v.3 no.2 Growth of Semiconductor/insulator structures- GaAs/fluoride/GaAs(001) P. W. Sullivan;J. e. Bower
  10. Appl. Phys. Lett. v.45 no.3 Epitaxial growth of BaF₂films onto PbSe and electronic properties of the interface H. Zogg;W. Vogt;H. Melchior
  11. HandBook of Thin Film Process Technology David A. Glocker;S Iomat Shah
  12. Cleaning Solution Based on Hydrogen peroxide for use in Semiconductor Technology W. Kern;D. A. Poutinen
  13. Elements of X-ray Diffraction B. D. Cullity
  14. J. Vac. Sci. Technol. A v.6 no.3 A comparative study of the electrical properties of epitaxial fluorides P. G. McMullin;S. Sinharoy
  15. Solid State Electron v.5 An Investigation of Surface States at a Silicon/Silicon oxide Interface Employing Metal-Oxide-Silicon Diodes L. M. Terman