• Journal of the Korean earth science society
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• v.42 no.6
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• pp.677-687
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• 2021

In this study, we analyzed diatoms from core RS15-GC41 collected in Iselin Bank, Ross Sea. A total of 24 genera and 35 species of diatoms are identified, and the having valve abundance of diatoms varies from 0.2 to 28.6×10⁶/g. Four diatom assemblage zones are established by the vertical distribution of diatoms, and changed with a cycle of 100 kyrs. RS15-GC41 were deposited over the last 400 kyrs (corresponding to Marine Isotope Stages 1-11). The open-water species Fragilariopsis kerguelensis, Rhizosolenia styliformis, and Thalassionema nitzschioides abundantly occurred in interglacial periods. Whereas, Actinocyclus actinochilus abundantly dominant during the glacial periods. The distribution of these diatoms indicated, it can be seen that the sea-ice extent was larger and lasted longer during MIS 7, 9, and 11 than that of MIS 1, 3, and 5. Moreover, Paralia sulcata was abundantly predominant in MIS 7, 9, and 11; this finding suggests likely indicating that P. sulcata was transported from the coastal/inner shelf area to the study site, during accumulated in the sediments, reworked with the influx of ice-rafted debris by the currents

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.97-103
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• 2007

Crystallized carbon nitride film that has many stable physical and/or chemical properties has been expected potentially by a new electrical material. However, one of the most significant problems degrading the quality of carbon nitride films is an existence of N-H and C-H bonds from the deposition environment. The possibility of these reactions with hydroxyl group in carbon nitride films, caused by a hydrogen attack, was suggested and proved in our previous reports that this undesired effect could be applied for fabricating micro-humidity sensors. In this study, MIS capacitor and MIM capacitor with $5{\mu}m{\times}5{\mu}m$ meshes were fabricated. As an insulator, carbon nitride film was deposited on a $Si_{3}N_{4}/SiO_{2}/Si$ substrate using reactive magnetron sputtering system, and its dielectric constant, C-V characteristics and humidity sensing properties were investigated. The fabricated humidity sensors showed a linearity in the humidity range of 0 %RH to 80 %RH. These results reveal that MIS and MIM $CN_{X}$ capacitive humidity sensors can be used for Si based micro-humidity sensors.

• The Journal of Information Technology
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• v.7 no.4
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• pp.9-20
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• 2004

Result Dos that materialization KNU Virus Wall to solve serious problem Hurtfulness Virus is present network chiefly in this research to do not become and do correct disposal in situation such as internet and Multiple Protocol that is done intelligence anger for ESM, CIS and MIS side as secondary to solve this problem about out log analysis system embody. As a result, could use comprehensively, and can click by Site Design, Packet transmission, and used to interior internet (GroupWare) in information protection aspect because intelligence enemy to face each other ESM's various hacking and virus uses Enterprise Security Management system and CIS, whole web through Smart View and relation of security could do monitoring.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.18-22
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• 2006

Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.977-982
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• 2005

Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

• Journal of Information Technology and Architecture
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• v.10 no.4
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• pp.497-508
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• 2013

This article examines the organizational aspect of IT governance in Financial Services Informatization, which is one of the key informatizations led by the Korea government. Financial Services Informatization has deeply contributed to the development of electronic financial services in Korea and affected people's everyday life. Using qualitative data obtained through multiple-case analysis, this study identifies the barriers to effective IT governance within the context of Financial Services Informatization. It also reveals that the scope and role of participants and the coordination between authorities are the critical to IT governance adoption in Financial Services Informatization. The key to the successful IT governance of Financial Services Informatization will depend on the involvement and accountability of relevant regulatory bodies and the secondary financial institutions affected by it.

• Journal of Drive and Control
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• v.21 no.2
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• pp.30-35
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• 2024

Domestic rice is more expensive than imported products, so it is necessary to reduce production costs to secure competitiveness. Low-density planting developed in Japan is a cultivation technology that reduces labor and production costs without yield loss. The area of low-density cultivation is continuously increasing. However, research on how rice transplanters adapt to low-density planting has not been conducted. Therefore, this study was carried out to determine the optimal working conditions of a rice transplanter for low-density planting. Three types of rice transplanters were used and treated based on 3 conveying distance levels. The number of picked seedlings, pick missing rate, the number of planted seedlings, and the mis-planted rate were investigated to evaluate planting accuracy according to the transfer distance to the seedling tray. The results showed that the number of planted seedlings was 4.31~4.95 EA with an L1 seedling tray transfer distance (horizontal 9 mm, vertical 8 mm), but the mis-planted rate was higher than in other conditions. At L2 (horizontal 9 mm, vertical 10 mm) and L3 (horizontal 11 mm, vertical 8 mm) transfer distance conditions, the number of planted seedlings were 4.89-5.68 EA and 4.69-5.66 EA, respectively, with a low mis-planted rate of less than 3%. The results showed that if the transfer distance is adjusted properly, a rice transplanter can be used for low-density planting with high planting accuracy.

• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.237-240
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• 2012

A conducting polymer, poly 3-hexylthiophene (P3HT) is characterized with the metal-insulator-semiconductor (MIS) measurement method and the high frequency planar circuit method. From the MIS measurement method, the relative dielectric constant of the P3HT film is estimated to be 4.4. For the high frequency planar circuit method, a coplanar waveguide is fabricated on the P3HT film. When applying +20 V to the CPW on P3HT film, the P3HT film is in accumulation mode and becomes lossy. The CPW on P3HT film is 1.5 dB lossier than the CPW on $SiO_2$ film without P3HT film at 50 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.20-30
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• 2001

A 1.8V $650{\;}\textrm{mm}^2$ 4Gb DRAM having $0.10{\;}\mu\textrm{m}^2$ cell size has been successfully developed using 0.11 $\mu\textrm{m}$DRAM technology. Considering manufactur-ability, we have focused on developing patterning technology using KrF lithography that makes $0.11{\;}\mu\textrm{m}$ DRAM technology possible. Furthermore, we developed novel DRAM technologies, which will have strong influence on the future DRAM integration. These are novel oxide gap-filling, W-bit line with stud contact for borderless metal contact, line-type storage node self-aligned contact (SAC), mechanically stable metal-insulator-silicon (MIS) capacitor and CVD Al process for metal inter-connections. In addition, 80 nm array transistor and sub-80 nm memory cell contact are also developed for high functional yield as well as chip performance. Many issues which large sized chip often faces are solved by novel design approaches such as skew minimizing technique, gain control pre-sensing scheme and bit line calibration scheme.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.147-152
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• 2016

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.