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Electrical characteristics of carbon nitride capacitor for micro-humidity sensors

마이크로 습도센서를 위한 질화탄소막 캐패시터의 전기적 특성

  • Kim, Sung-Yeop (Department of Elcetronic Engineering, Kyungnam University) ;
  • Lee, Ji-Gong (Department of Elcetronic Engineering, Kyungnam University) ;
  • Chang, Choong-Won (Department of Elcetronic Engineering, Kyungnam University) ;
  • Lee, Sung-Pil (Department of Elcetronic Engineering, Kyungnam University)
  • Published : 2007.03.31

Abstract

Crystallized carbon nitride film that has many stable physical and/or chemical properties has been expected potentially by a new electrical material. However, one of the most significant problems degrading the quality of carbon nitride films is an existence of N-H and C-H bonds from the deposition environment. The possibility of these reactions with hydroxyl group in carbon nitride films, caused by a hydrogen attack, was suggested and proved in our previous reports that this undesired effect could be applied for fabricating micro-humidity sensors. In this study, MIS capacitor and MIM capacitor with $5{\mu}m{\times}5{\mu}m$ meshes were fabricated. As an insulator, carbon nitride film was deposited on a $Si_{3}N_{4}/SiO_{2}/Si$ substrate using reactive magnetron sputtering system, and its dielectric constant, C-V characteristics and humidity sensing properties were investigated. The fabricated humidity sensors showed a linearity in the humidity range of 0 %RH to 80 %RH. These results reveal that MIS and MIM $CN_{X}$ capacitive humidity sensors can be used for Si based micro-humidity sensors.

Keywords

References

  1. A. Y. Liu and M. L. Cohen, 'Prediction of new low compressibility solids', Science, vol. 245, pp. 841, 1989 https://doi.org/10.1126/science.245.4920.841
  2. D. Marton, K. J. Boyd, and J. W. Rabalais, 'Synthesis of carbon nitride', International Journal of Modern Physics B, vol. 9, no. 27, pp. 3527, 1995 https://doi.org/10.1142/S0217979295001385
  3. C. M. Sung and M. Sung, 'Carbon nitride and other speculative superhard materials', Materials Chemistry and Physics, vol. 43, pp. 1, 1996 https://doi.org/10.1016/0254-0584(95)01607-V
  4. 이성필, S. Chowdhury, '페닝 소스 스퍼터링 장치를 이용한 결정성 질화탄소막의 성장 및 물리적 특성' 센서학회지, 제9권, 제3호, pp. 93-103, 2000
  5. J. G. Lee and S. P. Lee. 'Nano-Structured Carbon Nitride Film for Humidity Sensor Applilcations', J. Korean Phys. Soc. vol. 45, no. 3, pp. 619, 2004
  6. J. G. Lee and S. P. Lee, 'Humidity sensing properties of CNx film by RF magnetron sputtering system', Sensors and Actuators B, vol. 108, pp. 450, 2005 https://doi.org/10.1016/j.snb.2004.10.057
  7. J. G. Lee and S. P. Lee, 'Characterization of crystalline carbon nitride films deposited on Si and $Si_3N_4$/Si substrate by RF magnetron sputtering system with DC bias', J. Electroceram., vol. 13, pp. 321, 2004 https://doi.org/10.1007/s10832-004-5120-0
  8. E. H. Nicollian and J. R. Brews, MOS Physics and Technology, John Wiley & Sons, New York, pp. 423-435, 1982
  9. S. P. Lee and Y K. Yoon, 'Hygroscopic characteristics of $TiO_{2_x}$ thin film humidity sensors by RF magentron sputter', J. of the Korean Sensors Society, vol. 7, no. 2, pp. 79-83, 1998
  10. S. P. Lee and S. Chowdhury, 'Performance of differential field effect transistors with porous gate metal for humidity sensors', J. of the Korean Sensors Society, vol. 8, no. 6, pp. 8-13, 1999