• 제목/요약/키워드: MEMS process

검색결과 441건 처리시간 0.031초

System identification of soil behavior from vertical seismic arrays

  • Glaser, Steven D.;Ni, Sheng-Huoo;Ko, Chi-Chih
    • Smart Structures and Systems
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    • 제4권6호
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    • pp.727-740
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    • 2008
  • A down hole vertical seismic array is a sequence of instruments installed at various depths in the earth to record the ground motion at multiple points during an earthquake. Numerous studies demonstrate the unique utility of vertical seismic arrays for studying in situ site response and soil behavior. Examples are given of analyses made at two sites to show the value of data from vertical seismic arrays. The sites examined are the Lotung, Taiwan SMART1 array and a new site installed at Jingliao, Taiwan. Details of the installation of the Jingliao array are given. ARX models are theoretically the correct process models for vertical wave propagation in the layered earth, and are used to linearly map deeper sensor input signals to shallower sensor output signals. An example of Event 16 at the Lotung array is given. This same data, when examined in detail with a Bayesian inference model, can also be explained by nonlinear filters yielding commonly accepted soil degradation curves. Results from applying an ARMAX model to data from the Jingliao vertical seismic array are presented. Estimates of inter-transducer soil increment resonant frequency, shear modulus, and damping ratio are presented. The shear modulus varied from 50 to 150 MPa, and damping ratio between 8% and 15%. A new hardware monitoring system - TerraScope - is an affordable 4-D down-hole seismic monitoring system based on independent, microprocessor-controlled sensor Pods. The Pods are nominally 50 mm in diameter, and about 120 mm long. An internal 16-bit micro-controller oversees all aspects of instrumentation, eight programmable gain amplifiers, and local signal storage.

S자형 들보에 의해 지지되는 micromirror의 제작 및 동작특성 분석 (A Study on the Fabrication and Characterization of Micromirrors Supported by S-shape Girders)

  • 김종국;김호성;신형재
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권11호
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    • pp.748-754
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    • 1999
  • Micromirrors supported by S-shape girders were fabricated and their angular deflections were measured using a laser-based system. A micromirror consists of a $50\mum\times50\mum$ aluminum plate, posts and an S-shape girder. Two electrodes were deposited on two corners of the substrate beneath the mirror plate. $50\times50$micromirror array were fabricated using the Al-MEMS process. The electrostatic force caused by the voltage difference between the mirror plate and one of the electrodes causes the mirror plate to tilt until the girder touches the substrate. Bial voltage of the mirror plate is between 25~35V and signal pulse voltage on both electrodes is $\pm5V$. A laser-based system capable of real-time two-dimensional angular deflection measurement of the micromirror was developed. The operation of the system is based on measuring the displacement of a HeNe laser beam reflecting off the micromirror. The resonant frequency of the micromirror is 50kHz when the girder touches the substrate and it is 25 when the micromirror goes back to flat position, since the moving mass is about twice of the former case. The measurement results also revealed that the micromirror slants to the other direction even after the girder touches the substrate.

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산업용 압전 잉크젯 헤드의 구동신호에 따른 특성 (The Effects of Driving Waveform of Piezoelectric Industrial Inkjet Head for Fime Patterns)

  • 김영재;유영석;심원철;박창성;정재우;오용수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1621-1622
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    • 2006
  • This paper presents the effect of driving waveform for piezoelectric bend mode inkjet printhead with optimized mechanical design. Experimental and theoretical studies on the applied driving waveform versus jetting characteristic s were performed. The inkjet head has been designed to maximize the droplet velocity, minimize voltage response of the actuator and optimize the firing frequency to eject ink droplet. The head design was carried out by using mechanical simulation. The printhead has been fabricated with Si(100) and SOI wafers by MEMS process and silicon direct bonding method. To investigate how performance of the piezoelectric ceramic actuator influences on droplet diameter and droplet velocity, the method of stroboscopy was used. Also we observed the movement characteristics of PZT actuator with LDV(Laser Doppler Vibrometer) system, oscilloscope and dynamic signal analyzer. Missing nozzles caused by bubbles in chamber were monitored by their resonance frequency. Using the water based ink of viscosity of 4.8 cps and surface tension of 0.025N/m, it is possible to eject stable droplets up to 20kHz, 4.4m/s and above 8pL at the different applied driving waveforms.

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잉크젯 헤드의 공진주파수에 따른 구동파형을 이용한 개별노즐 제어 (Driving Per Nozzle By Various Waveform Depending On Resonance Frequency In Piezoelectric Inkjet Head)

  • 김영재;박창성;심원철;강필중;유영석;박정훈;정재우;오용수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1542-1543
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    • 2007
  • This paper presents the effect of driving waveform for piezoelectric bend mode inkjet printhead with optimized mechanical design. Experimental and theoretical studies on the applied driving waveform versus jetting characteristics were performed. The inkjet head has been designed to maximize the droplet velocity, minimize voltage response of the actuator and optimize the firing frequency to eject ink droplet. The head design was carried out by using mechanical simulation. The printhead has been fabricated with Si(100) and SOI wafers by MEMS process and silicon direct bonding method. To investigate how performance of the piezoelectric ceramic actuator influences on droplet diameter and droplet velocity, the method of stroboscopy was used. Using the water based ink of viscosity of 11.8 cps and surface tension of 0.025N/m, it is possible to eject stable droplets through 64 nozzles average velocity of 4.05 m/s with standard deviation of 0.06 m/s and average diameter of $29.2\;{\mu}m$ with standard variation of $0.5\;{\mu}m$.

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열처리 효과에 따른 SnO2 기반 수소가스 센서의 특성 최적화 (Optimization of SnO2 Based H2 Gas Sensor Along with Thermal Treatment Effect)

  • 정동건;이준엽;권진범;맹보희;김영삼;양이준;정대웅
    • 센서학회지
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    • 제31권5호
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    • pp.348-352
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    • 2022
  • Hydrogen gas (H2) which is odorless, colorless is attracting attention as a renewable energy source in varions applications but its leakage can lead to disastrous disasters, such as inflammable, explosive, and narcotic disasters at high concentrations. Therefore, it is necessary to develop H2 gas sensor with high performance. In this paper, we confirmed that H2 gas detection ability of SnO2 based H2 gas sensor along with thermal treatment effect of SnO2. Proposed SnO2 based H2 gas sensor is fabricated by MEMS technologies such as photolithgraphy, sputtering and lift-off process, etc. Deposited SnO2 thin films are thermally treated in various thermal treatement temperature in range of 500-900 ℃ and their H2 gas detection ability is estimatied by measuring output current of H2 gas sensor. Based on experimental results, fabricated H2 gas sensor with SnO2 thin film which is thermally treated at 700 ℃ has a superior H2 gas detection ability, and it can be expected to utilize at the practical applications.

선형가열기를 이용한 SillSiO2/Si3N4llSi 이종기판쌍의 직접접합 (Direct Bonding of SillSiO2/Si3N4llSi Wafer Fairs with a Fast Linear Annealing)

  • 이상현;이상돈;송오성
    • 한국전기전자재료학회논문지
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    • 제15권4호
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    • pp.301-307
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    • 2002
  • Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

다용도 실시간 경사각과 방위각 연속 측정 시스템 개발연구 (A Study on the Development of Multifuntional Real-Time Inclination and Azimuth Measurement System)

  • 김규현;조성호;정현기;이효선;손정술
    • 한국지구과학회지
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    • 제34권6호
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    • pp.588-601
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    • 2013
  • 최근 지구물리 물리탐사 분야에서 경사각과 방위각 정보는 시추공 물리검층 및 물리탐사 자료보정을 위한 시추공 편차검층, 이동형 실시간 자료획득 시스템, 기타 지구물리 모니터링 시스템 등 다양하게 활용되면서 그 중요성이 높아지고 있다. 특히 최근 셰일가스의 개발이 가능하게 한 방향시추 기술에서도 경사각과 방위각 정보는 필수일 정도로 그 응용범위가 매우 넓다. 따라서 여러 분야에 응용될 수 있는 경사각과 방위각 측정 시스템의 초소형 옥외 저전력 운용이 절실해졌다. 본 논문에서는 최신 CMOS 저전력, 고성능 MCU 및 멤스(MEMS) 자세방위기준장치(AHRS)를 도입하여 초소형, 저전력으로 제작된 다용도 야외시험용 실시간 경사각과 방위각 연속 측정 시스템 개발 연구의 결과를 제시하고자 한다. 시스템은 최소 지름 42 mm의 존데 내에 설치될 수 있도록 초슬림 형태로 제작되었으며 실시간 데이터 획득이 가능할 뿐만 아니라 엔코더, DGPS 연동으로 운용 확장이 가능하여 다양한 응용이 기대된다.

Deep Submicron MOSFET 기판회로 파라미터의 바이어스 및 게이트 길이 종속 데이터 추출 (Bias and Gate-Length Dependent Data Extraction of Substrate Circuit Parameters for Deep Submicron MOSFETs)

  • 이용택;최문성;구자남;이성현
    • 대한전자공학회논문지SD
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    • 제41권12호
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    • pp.27-34
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    • 2004
  • 최근 실리콘 미세공정의 발달로 상용화된 0.2$\mum$ 게이트길이 이하의 deep submicron MOSFET 출력특성을 정확히 모델링하기 위해서는 RF 기판 회로 연구가 필수적이다. 먼저 본 논문에서는 기판 캐패시던스와 기판 저항이 병렬로 연결된 모델과 기판 저항만을 사용한 단순 모델들에 적합한 직접 추출 방법을 각각 개발하였다. 이 추출방법들을 0.15$\mum$ CMOS 소자에 적용한 결과 단순 모델보다 RC 병렬 기판모델이 측정된 $Y_{22}$-parameter에 30GHz까지 더 잘 일치하는 것을 확인하였으며, 이는 RC 병렬 기판모델 및 직접추출방법의 RF 정확도를 증명한다. 이러한 RC 병렬 기판모델을 사용하여 게이트 길이를 0.11에서 0.5$\mum$까지 변화시키고 드레인 전압을 0에서 1.2V까지 증가시키면서 기판 모델 파라미터들의 bias 종속 특성과 게이트 길이 종속 특성을 새롭게 추출하였다. 이러한 새로운 추출 결과는 scalable한 RF 비선형 기판 모델 개발에 유용하게 사용될 것이다.

UV경화성 폴리머를 이용한 미소유체 통합접속 벤치 개발 및 전기/유체적 특성평가 (Electrical and Fluidic Characterization of Microelectrofluidic Bench Fabricated Using UV-curable Polymer)

  • 윤세찬;진영현;조영호
    • 대한기계학회논문집A
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    • 제36권5호
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    • pp.475-479
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    • 2012
  • 본 논문은 고차가지구조 폴리머인 AEO3000 를 이용한 UV 광경화 성형 공정을 제안하고자 한다. 이는 기존의 바이오칩 제작에 사용되는 PDMS 보다 경도가 높아 금속 전극 형성이 용이하고 제작 공정이 빠르다는 장점을 갖는다. AEO3000 을 이용하여 본 연구에서는 4 개의 소자를 전기적 유체적으로 연결할 수 있는 전기유체 통합벤치를 제작하고 미소유체 혼합소자와 세포분리소자를 연결, 본 소재와 공정이 바이오칩에 적용될 수 있음을 검증하였다. 전기 유체적 특성 분석 결과 전기적 접촉 저항은 $0.75{\pm}0.44{\Omega}$으로 충분히 작은 값을 보였으며, 유체 접속의 압력 저하는 8.3kPa로 기존의 튜브 연결 방법 대비 39.3% 개선된 값을 보였다. 통합벤치에 접속된 소자에 활성 및 비활성 효모를 주입하여 순차적인 혼합 및 재분리를 성공적으로 구현함으로써 본 소자에 적용된 AEO3000 및 UV 광경화 공정이 생체시료의 처리에 적용될 수 있음을 실험적으로 검증하였다. 이는 바이오 의료 분야에 적용 가능한 생체 친화적 소재의 고속 생산에 응용될 수 있다.

P-형 실리콘에 형성된 정렬된 매크로 공극 (Ordered Macropores Prepared in p-Type Silicon)

  • 김재현;김강필;류홍근;서홍석;이정호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.241-241
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    • 2008
  • Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

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