1 |
S. Lee, 'A Parameter Extraction Method for a Small-Signal MOSFET Model Including Sub-strate Parameters,' Proc. IEEE International Conference on Semiconductor Electronics, pp. 255-260, Dec. 2002
|
2 |
C.-H. Kim, C. S. Kim, H. K. Yu, and K. S. Nam, 'Unique extraction of substrate parameters of common-source MOSFET's,' IEEE Micro-wave and Guided Wave Lett., Vol 9, pp. 108-110, March 1999
DOI
ScienceOn
|
3 |
S. Lee, C. S. Kim, and H. K. Yu, 'A small-signal RF model and its parameter extraction for substrate effects in RF MOSFETs', IEEE Trans. Electron Devices, Vol. 48, pp. 1374-1379, July 2001
DOI
ScienceOn
|
4 |
Y.-J. Chan, C.-H. Huang, C.-C. Weng,and B.-K. Liew, 'Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model,' IEEE Trans. Microwave Theory Tech., Vol 46, pp. 611-615, May 1998
DOI
ScienceOn
|
5 |
S. Lee, 'Direct extraction technique for a small-signal MOSFET equivalent circuit with sub-strate parameters', Microwave and Optical Technology Lett., Vol. 39, No.4, pp. 344-347, Nov 2003
DOI
ScienceOn
|
6 |
J. M. Collantes, J. Raoux, J. Villotte, R. Quere, G. Montoriol, and F. Dupis, 'A new large-signal model based on pulse measurement techniques for RF power MOSFET', IEEE MTT-S lnt. Microwave Symp. Dig., pp. 1553-1556, June 1995
DOI
|
7 |
S. Lee, 'Effects of pad and interconnection parasitics on forward transit time in HBTs', IEEE Trans. Electron Devices, vol. 46, no. 2, pp. 275-278, Feb 1999
DOI
ScienceOn
|
8 |
N. Camilleri, J. Costa, D. Lovelace, and D. Ngo,'silicon MOSFET's, the microwave device technology for the 90s,'in IEEE MTT-S int. Microwave Symp. Dig., June 1993, pp.545-548
DOI
|