• Smart Structures and Systems
• /
• v.4 no.6
• /
• pp.727-740
• /
• 2008

A down hole vertical seismic array is a sequence of instruments installed at various depths in the earth to record the ground motion at multiple points during an earthquake. Numerous studies demonstrate the unique utility of vertical seismic arrays for studying in situ site response and soil behavior. Examples are given of analyses made at two sites to show the value of data from vertical seismic arrays. The sites examined are the Lotung, Taiwan SMART1 array and a new site installed at Jingliao, Taiwan. Details of the installation of the Jingliao array are given. ARX models are theoretically the correct process models for vertical wave propagation in the layered earth, and are used to linearly map deeper sensor input signals to shallower sensor output signals. An example of Event 16 at the Lotung array is given. This same data, when examined in detail with a Bayesian inference model, can also be explained by nonlinear filters yielding commonly accepted soil degradation curves. Results from applying an ARMAX model to data from the Jingliao vertical seismic array are presented. Estimates of inter-transducer soil increment resonant frequency, shear modulus, and damping ratio are presented. The shear modulus varied from 50 to 150 MPa, and damping ratio between 8% and 15%. A new hardware monitoring system - TerraScope - is an affordable 4-D down-hole seismic monitoring system based on independent, microprocessor-controlled sensor Pods. The Pods are nominally 50 mm in diameter, and about 120 mm long. An internal 16-bit micro-controller oversees all aspects of instrumentation, eight programmable gain amplifiers, and local signal storage.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.11
• /
• pp.748-754
• /
• 1999

Micromirrors supported by S-shape girders were fabricated and their angular deflections were measured using a laser-based system. A micromirror consists of a $50\mum\times50\mum$ aluminum plate, posts and an S-shape girder. Two electrodes were deposited on two corners of the substrate beneath the mirror plate. $50\times50$micromirror array were fabricated using the Al-MEMS process. The electrostatic force caused by the voltage difference between the mirror plate and one of the electrodes causes the mirror plate to tilt until the girder touches the substrate. Bial voltage of the mirror plate is between 25~35V and signal pulse voltage on both electrodes is $\pm5V$. A laser-based system capable of real-time two-dimensional angular deflection measurement of the micromirror was developed. The operation of the system is based on measuring the displacement of a HeNe laser beam reflecting off the micromirror. The resonant frequency of the micromirror is 50kHz when the girder touches the substrate and it is 25 when the micromirror goes back to flat position, since the moving mass is about twice of the former case. The measurement results also revealed that the micromirror slants to the other direction even after the girder touches the substrate.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1621-1622
• /
• 2006

This paper presents the effect of driving waveform for piezoelectric bend mode inkjet printhead with optimized mechanical design. Experimental and theoretical studies on the applied driving waveform versus jetting characteristic s were performed. The inkjet head has been designed to maximize the droplet velocity, minimize voltage response of the actuator and optimize the firing frequency to eject ink droplet. The head design was carried out by using mechanical simulation. The printhead has been fabricated with Si(100) and SOI wafers by MEMS process and silicon direct bonding method. To investigate how performance of the piezoelectric ceramic actuator influences on droplet diameter and droplet velocity, the method of stroboscopy was used. Also we observed the movement characteristics of PZT actuator with LDV(Laser Doppler Vibrometer) system, oscilloscope and dynamic signal analyzer. Missing nozzles caused by bubbles in chamber were monitored by their resonance frequency. Using the water based ink of viscosity of 4.8 cps and surface tension of 0.025N/m, it is possible to eject stable droplets up to 20kHz, 4.4m/s and above 8pL at the different applied driving waveforms.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1542-1543
• /
• 2007

This paper presents the effect of driving waveform for piezoelectric bend mode inkjet printhead with optimized mechanical design. Experimental and theoretical studies on the applied driving waveform versus jetting characteristics were performed. The inkjet head has been designed to maximize the droplet velocity, minimize voltage response of the actuator and optimize the firing frequency to eject ink droplet. The head design was carried out by using mechanical simulation. The printhead has been fabricated with Si(100) and SOI wafers by MEMS process and silicon direct bonding method. To investigate how performance of the piezoelectric ceramic actuator influences on droplet diameter and droplet velocity, the method of stroboscopy was used. Using the water based ink of viscosity of 11.8 cps and surface tension of 0.025N/m, it is possible to eject stable droplets through 64 nozzles average velocity of 4.05 m/s with standard deviation of 0.06 m/s and average diameter of $29.2\;{\mu}m$ with standard variation of $0.5\;{\mu}m$.

• Journal of Sensor Science and Technology
• /
• v.31 no.5
• /
• pp.348-352
• /
• 2022

Hydrogen gas (H₂) which is odorless, colorless is attracting attention as a renewable energy source in varions applications but its leakage can lead to disastrous disasters, such as inflammable, explosive, and narcotic disasters at high concentrations. Therefore, it is necessary to develop H₂ gas sensor with high performance. In this paper, we confirmed that H₂ gas detection ability of SnO₂ based H₂ gas sensor along with thermal treatment effect of SnO₂. Proposed SnO₂ based H₂ gas sensor is fabricated by MEMS technologies such as photolithgraphy, sputtering and lift-off process, etc. Deposited SnO₂ thin films are thermally treated in various thermal treatement temperature in range of 500-900 ℃ and their H₂ gas detection ability is estimatied by measuring output current of H₂ gas sensor. Based on experimental results, fabricated H₂ gas sensor with SnO₂ thin film which is thermally treated at 700 ℃ has a superior H₂ gas detection ability, and it can be expected to utilize at the practical applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.4
• /
• pp.301-307
• /
• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• Journal of the Korean earth science society
• /
• v.34 no.6
• /
• pp.588-601
• /
• 2013

In geophysics and geophysical exploration fields, we can use information about inclination and azimuth in various ways. These include borehole deviation logging for inversion process, real-time data acquisition system, geophysical monitoring system, and so on. This type of information is also necessarily used in the directional drilling of shale gas fields. We thus need to develop a subminiature, low-powered, multi-functional inclination and azimuth measurement system for geophysical exploration fields. In this paper, to develop real-time measurement system, we adopt the high performance low power Micro Control Unit (made with state-of-the-art Complementary Metal Oxide Semiconductor technology) and newly released Micro Electro Mechanical Systems Attitude Heading Reference System sensors. We present test results on the development of a multifunctional real-time inclination and azimuth measurement system. The developed system has an ultra-slim body so as to be installed in 42mm sonde. Also, this system allows us to acquire data in real-time and to easily expand its application by synchronizing with a depth encoder or Differential Global Positioning System.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.12
• /
• pp.27-34
• /
• 2004

The study on the RF substrate circuit is necessary to model RF output characteristics of deep submicron MOSFETs below 0.2$\mum$ gate length that have bun commercialized by the recent development of Si submicron process. In this paper, direct extraction methods are developed to apply for a simple substrate resistance model as well as another substrate model with connecting resistance and capacitance in parallel. Using these extraction methods, better agreement with measured Y22-parameter up to 30 GHz is achieved for 0.15$\mum$ CMOS device by using the parallel RC substrate model rather than the simple resistance one, demonstrating the RF accuracy of the parallel model and extraction technique. Using this model, bias and gate length dependent curves of substrate parameters in the RF region are obtained by increasing drain voltage of 0 to 1.2V at deep submicron devices with various gate lengths of 0.11 to 0.5㎛ These new extraction data will greatly contribute to developing a scalable RF nonlinear substrate model.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.36 no.5
• /
• pp.475-479
• /
• 2012

We present a novel polymer fabrication process involving direct UV patterning of a hyperbranched polymer, AEO3000. Compared to PDMS, which is the most widely used polymer in bioMEMS devices, the present polymer has advantages with regard to electrode integration and fast fabrication. We designed a four-chip microelectrofluidic bench having three electrical pads and two fluidic I/O ports. We integrated a microfluidic mixer and a cell separator on the bench to characterize the interconnection performance and sample manipulation. Electrical and fluidic characterization of the microfluidic bench was performed. The measured electrical contact resistance was $0.75{\pm}0.44{\Omega}$, which is small enough for electrical applications, and the pressure drop was 8.3 kPa, which was 39.3% of the value in the tubing method. By performing yeast mixing and a separation test in the integrated module on the bench, we successfully showed that the interconnected chips could be used for bio-sample manipulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.241-241
• /
• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.