• Title/Summary/Keyword: MEMS Fabrication Process

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RF MEMS Switches and Integrated Switching Circuits

  • Liu, A.Q.;Yu, A.B.;Karim, M.F.;Tang, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.3
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    • pp.166-176
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    • 2007
  • Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

Three Dimensional Molecular Dynamics Simulation of Nano-Lithography Process for Fabrication of Nanocomponents in Micro Electro Mechanical Systems (MEMS) Applications (MEMS 부품 제조를 위한 나노 리소그래피 공정의 3차원 분자동력학 해석)

  • Kim, Young-Suk;Lee, Seung-Sub;Na, Kyoung-Hoan;Son, Hyun-Sung;Kim, Jin
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.27 no.10
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    • pp.1754-1761
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    • 2003
  • The atomic force microscopy (AFM) based lithographic technique has been used directly to machine material surface and fabricate nano components in MEMS (micro electro mechanical system). In this paper, three-dimensional molecular dynamics (MD) simulations have been conducted to evaluate the characteristic of deformation process at atomistic scale for nano-lithography process. Effects of specific combinations of crystal orientations and cutting directions on the nature of atomistic deformation were investigated. The interatomic force between diamond tool and workpiece of copper material was assumed to be derived from the Morse potential function. The variation of tool geometry and cutting depth was also evaluated and the effect on machinability was investigated. The result of the simulation shows that crystal plane and cutting direction significantly influenced the variation of the cutting forces and the nature of deformation ahead of the tool as well as the surface deformation of the machined surface.

Fabrication of capacitance sensor for real time harmful substance mass fraction mesurement (유독물질 질량분율 실시간 측정용 정전용량센서 제작)

  • Kim, Young-Su;Oh, Jeoung Seok
    • 한국연소학회:학술대회논문집
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    • 2014.11a
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    • pp.337-338
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    • 2014
  • In this study, a method of using a capacitance sensor was investigated as a means to measure the mass fraction of a type of harmful substance. Using MEMS process, we developed a capacitance sensor and studied the real time mass fraction with harmful substance mixture liquid.

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Development of Stereolithography Apparatus by using UV-LED (UV-LED를 이용한 광조형 장치 개발)

  • Yun, Hae-Yong;Ko, Tae-Jo;Kim, Ho-Chan
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.13 no.2
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    • pp.15-20
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    • 2014
  • The stereolithography(SL) process is a type of fabrication technology which relies on photopolymerization. It has a relatively simple fabrication process and a resolution of several tens of ${\mu}m$. Recently, SL technology has been applied to various areas, such as bioengineering and MEMS devices, due to the development of advanced materials. This technologycan be divided intothe scanning(SSL) and projection (PSL) types. In this paper, in stereolithography, parts are fabricated by curing photopolymeric resins with light. The application of stereolithography can now include fabricated parts. This process, called stereolithography, can fabricate parts by taking into account theirdegrees of geometry complexity. In particular, UV-LED stereolithography can perform quite rapid fabrication in which specific cross-sections are cured upon exposure to light.

Fabrication and Performance Evaluation of Temperature Sensor Matrix Using a Flexible Printed Circuit Board for the Visualization of Temperature Field (온도장 가시화를 위한 연성회로기판을 이용한 온도센서 어레이 제작 및 성능평가)

  • Ahn, Cheol-Hee;Kim, Hyung-Hoon;Cha, Je-Myung;Kwon, Bong-Hyun;Ha, Man-Yeong;Park, Sang-Hu;Jeong, Ji-Hwan;Kim, Kui-Soon;Cho, Jong-Rae;Son, Chang-Min;Lee, Jung-Ho;Go, Jeung-Sang
    • Journal of the Korean Society of Visualization
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    • v.7 no.2
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    • pp.17-21
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    • 2010
  • This paper presents the fabrication and performance measurement of a temperature sensor array on a flexible substrate attachable to a curved surface using MEMS technology. Specifically, the fabrication uses the well-developed printed circuit board fabrication technology for complex electrode definition. The temperature sensor array are lifted off with a $10{\times}10$ matrix in a $50\;mm{\times}50\;mm$ to visualize temperature distribution. Copper is used as temperature sensing material to measure the change in resistances with temperature increase. In a thermal oven with temperature control, the temperature sensor array is Characterized. The constant slope of resistance change is obtained and temperature distribution is measured from the relationship between resistance and temperature.

Characteristics of single/poly crystalline silicon etching by$Ar^+$ ion laser for MEMS applications (MEMS 응용을 위한 $Ar^+$ 이온 레이저에 의한 단결정/다결정 실리콘 식각 특성)

  • Lee, Hyun-Ki;Han, Seung-Oh;Park, Jung-Ho;Lee, Cheon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.396-401
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    • 1999
  • In this study, $Ar^+$ ion laser etching process of single/poly-crystalline Si with $CCl_2F_2$ gas is investigated for MEMS applications. In general, laser direct etching process is useful in microelectronic process, fabrication of micro sensors and actuators, rapid prototyping, and complementary processing because of the advantages of 3D micromachining, local etching/deposition process, and maskless process with high resolution. In this study, a pyrolytic method, in which $CCl_2F_2$ gasetches molten Si by the focused laser, was used. In order to analyze the temperature profile of Si by the focused laser, the 3D heat conduction equation was analytically solved. In order to investigate the process parameters dependence of etching characteristics, laser power, $CCl_2F_2$ gas pressure, and scanning speed were varied and the experimental results were observed by SEM. The aspect ratio was measured in multiple scanning and the simple 3D structure was fabricated. In addition, the etching characteristics of $6\mum$ thick poly-crystalline Si on the insulator was investigated to obtain flat bottom and vertical side wall for MEMS applications.

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Investigation into direct fabrication of nano-patterns using nano-stereolithography (NSL) process (나노 스테레오리소그래피 공정을 이용한 무(無)마스크 나노 패턴제작에 관한 연구)

  • Park Sang Hu;Lim Tae-Woo;Yang Dong-Yol
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.3 s.180
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    • pp.156-162
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    • 2006
  • Direct fabrication of nano patterns has been studied employing a nano-stereolithography (NSL) process. The needs of nano patterning techniques have been intensively increased for diverse applications for nano/micro-devices; micro-fluidic channels, micro-molds. and other novel micro-objects. For fabrication of high-aspect-ratio (HAR) patterns, a thick spin coating of SU-8 process is generally used in the conventional photolithography, however, additional processes such as pre- and post-baking processes and expansive precise photomasks are inevitably required. In this work, direct fabrication of HAR patterns with a high spatial resolution is tried employing two-photon polymerization in the NSL process. The precision and aspect ratio of patterns can be controlled using process parameters of laser power, exposure time, and numerical aperture of objective lens. It is also feasible to control the aspect ratio of patterns by truncation amounts of patterns, and a layer-by-layer piling up technique is attempted to achieve HAR patterns. Through the fabrication of several patterns using the NSL process, the possibility of effective patterning technique fer various N/MEMS applications has been demonstrated.

Fabrication of Probe Beam by Using Joule Heating and Fusing (절연절단법을 이용한 프로브 빔의 제작)

  • Hong, Pyo-Hwan;Kong, Dae-Young;Lee, Dong-In;Kim, Bonghwan;Cho, Chan-Seob;Lee, Jong-Hyun
    • Journal of Sensor Science and Technology
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    • v.22 no.1
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    • pp.89-94
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    • 2013
  • In this paper, we developed a beam of MEMS probe card using a BeCu sheet. Silicon wafer thickness of $400{\mu}m$ was fabricated by using deep reactive ion etching (RIE) process. After forming through silicon via (TSV), the silicon wafer was bonded with BeCu sheet by soldering process. We made BeCu beam stress-free owing to removing internal stress by using joule heating. BeCu beam was fused by using joule heating caused by high current. The fabricated BeCu beam measured length of 1.75 mm and width of 0.44 mm, and thickness of $15{\mu}m$. We measured fusing current as a function of the cutting planes. Maximum current was 5.98 A at cutting plane of $150{\mu}m^2$. The proposed low-cost and simple fabrication process is applicable for producing MEMS probe beam.

Characteristics of Surface Micromachined Capacitive Pressure Sensors for High Temperature Applications (표면 MEMS 기술을 이용한 고온 용량형 압력센서의 특성)

  • Seo, Jeong-Hwan;Noh, Sang-Soo;Kim, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.4
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    • pp.317-322
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    • 2010
  • This paper reports the fabrication and characterization of surface micromachined poly 3C-SiC capacitive pressure sensors on silicon wafer operable in touch mode and normal mode for high temperature applications. FEM(finite elements method) simulation has been performed to verify the analytical mode. The sensing capacitor of the capacitive pressure sensor is composed of the upper metal and the poly 3C-SiC layer. Measurements have been performed in a temperature range from $25^{\circ}C$ to $500^{\circ}C$. Fabrication process of designed poly 3C-SiC touch mode capacitive pressure sensor was optimized and would be applicable to capacitive pressure sensors that are required high precision and sensitivity at high pressure and temperature.