• Title/Summary/Keyword: M/W Band

Search Result 452, Processing Time 0.028 seconds

A Study on Design and Fabrication of High Isolation W-band MIMIC Single-balanced Mixer (높은 격리도 특성의 W-밴드용 MIMIC 단일 평형 주파수 혼합기의 설계 및 제작 연구)

  • Yi, Sang-Yong;Lee, Mun-Kyo;An, Dan;Lee, Bok-Hyung;Lim, Byeong-Ok;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.44 no.11
    • /
    • pp.48-53
    • /
    • 2007
  • In this paper, a high LO-RF isolation W-band MIMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The W-band MIMIC single-balanced mixer was designed using the $0.1\;{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 154 GHz and the maximum oscillation frequency($f_{max}$) of 454 GHz. The designed MIMIC single-balanced mixer was fabricated using $0.1\;{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the single-balanced mixer was 12.8 dB at an LO power of 8.6 dBm. P1 dB(1 dB compression point) of input and output were 5 dBm and -8.9 dBm, respectively. The LO-RF isolations of single-balanced mixer was obtained 37.2 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

Implementation of a CMOS RF Transceiver for 900MHz ZigBee Applications (ZigBee 응용을 위한 900MHz CMOS RF 송.수신기 구현)

  • Kwon, J.K.;Park, K.Y.;Choi, Woo-Young;Oh, W.S.
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.43 no.11 s.353
    • /
    • pp.175-184
    • /
    • 2006
  • In this paper, we describe a 900MHz CMOS RF transceiver using an ISM band for ZigBee applications. The architecture of the designed rx front-end, which consists of a low noise amplifier, a down-mixer, a programmable gain amplifier and a band pass filter. And the tx front-end, which consists of a band pass filter, a programmable gain amplifier, an up-mixer and a drive amplifier. A low-if topology is adapted for transceiver architecture, and the total current consumption is reduced by using a low power topology. Entire transceiver is verified by means of post-layout simulation and is implemented in 0.18um RF CMOS technology. The fabricated chip demonstrate the measured results of -92dBm minimum rx input level and 0dBm maximum tx output level. Entire power consumption is 32mW(@1.8VDD). Die area is $2.3mm{\times}2.5mm$ including ESD protection diode pads.

A Fully-Integrated Low Phase Noise Multi-Band 0.13-um CMOS VCO using Automatic Level Controller and Switched LC Tank (자동 크기 조절 회로와 Switched LC tank를 이용한 집적화된 저위상 잡음 다중 대역 0.13-um CMOS 전압 제어 발진기)

  • Choi, Jae-Won;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.44 no.1
    • /
    • pp.79-84
    • /
    • 2007
  • In this paper, a fully-integrated low phase noise multi-band CMOS VCO using automatic level controller (ALC) and switched LC tank has been presented. The proposed VCO has been fabricated in a 0.13-um CMOS process. The switched LC tank has been designed with a pair of capacitors and two pairs of inductors switched using MOS switch. By using this structure, four band (2.986 ${\sim}$ 3.161, 3.488 ${\sim}$ 3.763, 4.736 ${\sim}$ 5.093, and 5.35 ${\sim}$ 5.887 GHz) operation is achieved in a single VCO. The VCO with 1.2 V power supply has phase noise of -118.105 dBc/Hz @ 1 MHz at 2.986 GHz and -113.777 dBc/Hz @ 1 MHz at 5.887 GHz, respectively. The reduced phase noise has been approximately -1 ${\sim}$ -3 dBc/Hz @ 1 MHz in the broadest tuning range, 2.986 ${\sim}$ 5.887 GHz. The VCO has consumed 4.2 ${\sim}$ 5.4 mW in the entire frequency band.

A Frequency Synthesizer for MB-OFDM UWB with Fine Resolution VCO Tuning Scheme (고 해상도 VCO 튜닝 기법을 이용한 MB-OFDM UWB용 주파수 합성기)

  • Park, Joon-Sung;Nam, Chul;Kim, Young-Shin;Pu, Young-Gun;Hur, Jeong;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.46 no.8
    • /
    • pp.117-124
    • /
    • 2009
  • This paper describes a 3 to 5 GHz frequency synthesizer for MB-OFDM (Multi-Band OFDM) UWB (Ultra- Wideband) application using 0.13 ${\mu}m$ CMOS process. The frequency synthesizer operates in the band group 1 whose center frequencies are 3432 MHz 3960 MHz, and 4488 MHz. To cover the overall frequencies of group 1, an efficient frequency planning minimizing a number of blocks and the power consumption are proposed. And, a high-frequency VCO and LO Mixer architecture are also presented in this paper. A new mixed coarse tuning scheme that utilizes the MIM capacitance, the varactor arrays, and the DAC is proposed to expand the VCO tuning range. The frequency synthesizer can also provide the clock for the ADC in baseband modem. So, the PLL for the ADC in the baseband modem can be removed with this frequency synthesizer. The single PLL and two SSB-mixers consume 60 mW from a 1.2 sV supply. The VCO tuning range is 1.2 GHz. The simulated phase noise of the VCO is -112 dBc/Hz at 1 MHz offset. The die area is 2 ${\times}$ 2mm$^2$.

Initial Experiment Results in the Development of a L-Band Microwave Radiometer for Remote Sensing of Sea and River Surface Salinity (해수 및 하천수의 염분농도 원격탐사용 L-Band M/W Radiometer의 개발 및 초기 실험결과)

  • Kim, Sang-Bong;Kim, Ji-Hoon;Son, Hong-Min
    • Proceedings of the KSRS Conference
    • /
    • 2007.03a
    • /
    • pp.65-69
    • /
    • 2007
  • A L-Band microwave radiometer for remote sensing of sea and river surface salinity has been developed. The processes of the design and implementation of the microwave radiometer, and the experiment results are presented in this paper. The developed L-Band microwave radiometer was field-tested in Sum-Jin River. The initial results shows that the microwave radiometer measures the sea and river surface salinity with the sensitivity of 1.5psu successfully.

  • PDF

Comparison of the Ligating Ability of Anonic Transition Metal Complex $(Mn(CO)_{5}{^-})$, Transition Metal Hydrides $(HCr(CO)_{5}{^-},\;HW(CO)_{5}{^-},\;cis-HW(CO)_{4}P(OMe)_{3}{^-},\;HFe(CO)_{4}{^-},\;trans-\;HFe(CO)_{3}P(OMe)_{3}{^-})$, and Traditional Ligands $(Br^-,\;P(C_{6}H_{5})_{3})\;to\;M(CO)_{5}{^0}$ (M = Cr, W)

  • Park, Yong K;Han, In S;Marcetta Y. Darensbourg
    • Bulletin of the Korean Chemical Society
    • /
    • v.15 no.6
    • /
    • pp.436-442
    • /
    • 1994
  • Heterobimetallic complexes have a donor-accepter metal-metal bond in which two electrons from the electron-rich metal moiety are donated to the other electron-deficient one. Based on the competition reactions, Cotton-Kraihanzel force constants, ν(CO)IR band resolution and the relative nucleophilicity comparison of the donor ligands, the following relative ligating ability of the donor ligands toward $M(CO)_5$ (M=Cr, W) is assessed: cis-HW$(CO)_4P(OMe)_3^-$, $HW(CO)_5^-$ > $HCr(CO)_5^-$-$Br^-$ > trans-HFe$(CO)_3P(OMe)_3^-$ > $Mn(CO)_5^-$ > $HFe(CO)_4^-$ > PP$h_3$

Design of a W-Band Power Amplifier Using 65 nm CMOS Technology (65 nm CMOS 공정을 이용한 W-대역 전력증폭기 설계)

  • Kim, Jun-Seong;Kwon, Oh-yun;Song, Reem;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.27 no.3
    • /
    • pp.330-333
    • /
    • 2016
  • In this paper, we propose 77 GHz power amplifier for long range automotive collision avoidance radar using 65 nm CMOS process. The proposed circuit has a 3-stage single power amplifier which includes common source structure and transformer. The measurement results show 18.7 dB maximum voltage gain at 13 GHz 3 dB bandwidth. The measured maximum output power is 10.2 dBm, input $P_{1dB}$ is -12 dBm, output $P_{1dB}$ is 5.7 dBm, and maximum power add efficiency is 7.2 %. The power amplifier consumes 140.4 mW DC power from 1.2 V supply voltage.

Highly Linear Differential Transconductance Amplifier With Mixed Source-degenerations (소스축퇴를 혼합하여 선형성을 개선시킨 차동 트랜스컨덕턴스 증폭기)

  • Lee, Sang-Geun;Kang, So-Young;Park, Chul-Soon
    • Proceedings of the IEEK Conference
    • /
    • 2008.06a
    • /
    • pp.547-548
    • /
    • 2008
  • Linearity improvement technique of transconductor is presented in the paper. In order to certify the linearity improvement of proposed transconductor, the 3rd-order Elliptic low-pass Gm-C filter which provides 5MHz cutoff is implemented by using the transconductor. According to the IIP3 measurement result of filters, proposed filter has higher IIP3 than normal source-degeneration filter; the In-band IIP3 of proposed and normal filter are 10.1 dBm and 7.5 dBm respectively. The filter is fabricated in 1P6M $0.18-{\mu}m$ CMOS while consuming the 3.3mW with 1.8 Vdd. The in-band input-referred noise voltage is $62.3{\mu}Vrms$ and the SFDR is 54.1 dB.

  • PDF

A $LN_2$-cooled, Broadband cw CO Laser (액체질소 냉각형광대역 cw CO 레이저)

  • Kim, Y.P.;Choi, J.W.;Won, J.W.
    • Proceedings of the KIEE Conference
    • /
    • 1989.07a
    • /
    • pp.667-671
    • /
    • 1989
  • The CO laser is one of powerful light source for laser magnetic resonance spectroscopy in the mid-infrared region of the spectrum because of its wideband operational characteristics. In this work, a liquid nitrogen cooled cw CO laser is developed to allow broad-band operation from 5 to 8 ${\mu}m$. The design details will be presented.

  • PDF

A Low-power High-resolution Band-pass Sigma-delta ADC for Accelerometer Applications

  • Cao, Tianlin;Han, Yan;Zhang, Shifeng;Cheung, Ray C.C.;Chen, Yaya
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.17 no.3
    • /
    • pp.438-445
    • /
    • 2017
  • This paper presents a low-power high-resolution band-pass ${\Sigma}{\Delta}$ ADC for accelerometer applications. The proposed band-pass ${\Sigma}{\Delta}$ ADC consists of a high-performance 6-th order feed-forward ${\Sigma}{\Delta}$ modulator with 1-bit quantization and a low-power, area-efficient digital filter. The ADC is fabricated in 180 nm 1P6M mixed-signal CMOS process with a die area of $5mm^2$. This high-resolution ADC got 90 dB peak signal to noise plus distortion ratio (SNDR) and 96 dB dynamic range (DR) over 4 kHz bandwidth, while the intermediate frequency (IF) is shifting from 100 KHz to 200 KHz. The power dissipation of the chip is 5.6 mW under 1.8 V (digital)/3.3 V (analog) power supply.