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http://dx.doi.org/10.5515/KJKIEES.2016.27.3.330

Design of a W-Band Power Amplifier Using 65 nm CMOS Technology  

Kim, Jun-Seong (College of Information & Communication Engineering, Sungkyunkwan University)
Kwon, Oh-yun (College of Information & Communication Engineering, Sungkyunkwan University)
Song, Reem (College of Information & Communication Engineering, Sungkyunkwan University)
Kim, Byung-Sung (College of Information & Communication Engineering, Sungkyunkwan University)
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Abstract
In this paper, we propose 77 GHz power amplifier for long range automotive collision avoidance radar using 65 nm CMOS process. The proposed circuit has a 3-stage single power amplifier which includes common source structure and transformer. The measurement results show 18.7 dB maximum voltage gain at 13 GHz 3 dB bandwidth. The measured maximum output power is 10.2 dBm, input $P_{1dB}$ is -12 dBm, output $P_{1dB}$ is 5.7 dBm, and maximum power add efficiency is 7.2 %. The power amplifier consumes 140.4 mW DC power from 1.2 V supply voltage.
Keywords
Power Amplifier; CMOS; W-Band;
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