Highly Linear Differential Transconductance Amplifier With Mixed Source-degenerations

소스축퇴를 혼합하여 선형성을 개선시킨 차동 트랜스컨덕턴스 증폭기

  • Lee, Sang-Geun (School of Engineering Information and Communications University) ;
  • Kang, So-Young (School of Engineering Information and Communications University) ;
  • Park, Chul-Soon (School of Engineering Information and Communications University)
  • 이상근 (한국정보통신대학교 공학부) ;
  • 강소영 (한국정보통신대학교 공학부) ;
  • 박철순 (한국정보통신대학교 공학부)
  • Published : 2008.06.18

Abstract

Linearity improvement technique of transconductor is presented in the paper. In order to certify the linearity improvement of proposed transconductor, the 3rd-order Elliptic low-pass Gm-C filter which provides 5MHz cutoff is implemented by using the transconductor. According to the IIP3 measurement result of filters, proposed filter has higher IIP3 than normal source-degeneration filter; the In-band IIP3 of proposed and normal filter are 10.1 dBm and 7.5 dBm respectively. The filter is fabricated in 1P6M $0.18-{\mu}m$ CMOS while consuming the 3.3mW with 1.8 Vdd. The in-band input-referred noise voltage is $62.3{\mu}Vrms$ and the SFDR is 54.1 dB.

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