• Journal of Power Electronics
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• 제13권4호
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• pp.626-635
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• 2013

An analysis of the junction capacitance in resonant rectifiers which has a significant impact on the operating point of resonance circuits is studied in this paper, where the junction capacitance of the rectifier diode is to decrease the resonant current and output voltage in the circuit when compared with that in an ideal rectifier diode. This can be represented by a simplified series resonant equivalent circuit and a voltage transfer function versus the normalized operating frequency at varied values of the resonant capacitor. A low voltage to high voltage push-pull DC/DC resonant converter was used as a design example. The design procedure is based on the principle of the half bridge class-DE resonant rectifier, which ensures more accurate results. The proposed scheme provides a more systematic and feasible solution than the conventional resonant push-pull DC/DC converter analysis methodology. To increase circuit efficiency, the main switches and the rectifier diodes can be operated under the zero-voltage and zero-current switching conditions, respectively. In order to achieve this objective, the parameters of the DC/DC converter need to be designed properly. The details of the analysis and design of this DC/DC converter's components are described. A prototype was constructed with a 62-88 kHz variable switching frequency, a 12 $V_{DC}$ input voltage, a 380 $V_{DC}$ output voltage, and a rated output power of 150 W. The validity of this approach was confirmed by simulation and experimental results.

• Journal of international Conference on Electrical Machines and Systems
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• 제1권2호
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• pp.79-84
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• 2012

In this paper, a three-phase high-voltage converter (HVC), in which the main structure of each phase is composed of a cascaded PWM rectifier (CPR) and cascaded inverter (CI), is studied. A high-voltage grid is the input of the HVC. In order to ensure proper operation of the HVC, the control method should achieve output voltage sharing (OVS) among the rectifiers in the CPR, OVS among the inverters in the CI, and high power factor. Master-slave direct-current control (MDCC) is used to control the CPR. The ability of the control system to prevent interference is strong when using MDCC. The CI is controlled by three-loop control, which is composed of an outer common-output-voltage loop, inner current loops and voltage sharing loops. Simulation results show low total harmonic distortion (THD) in the HVC input currents and good OVS in both the CPR and CI.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2009년도 정기총회 및 추계학술대회 논문집
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• pp.231-233
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• 2009

The plating equipment, water treatment system, electrolysis facility, etc need the high current and high power rectifier for their original purposes. So the paper investigates the applicable types of rectifiers and carries out their comparisons, and also suggest the practical design guidelines for a suitable candidate rectifier for low voltage high current high power applications.

• 전력전자학회논문지
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• 제10권4호
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• pp.380-387
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• 2005

본 논문에서는 능동 클램프형 포워드 DC-DC 컨버터를 이용하여 저전압 대전류에 적합한 고전력밀도의 개방형 전원 장치를 구성하고 그 특성에 대해 보고한 것이다. 전원장치의 입력전압은 통신기용에 적합한 36-75V이며, 출력은 3.3V, 100W급으로 하였다. 대전류에서 전도손실을 저감시키기 위해서 동기정류 방식을 사용하였으며 시스템의 과전류 보호기능을 향상시키기 위해서 고정밀 PCB 저항을 이용한 정전류제어기가 이용되었다. 시험용 전원장치는 통신기용 온보드 전원장치에 적합하도록 높이를 8m 이하, 크기는 quarter brick (58x37mm) 사이즈로 제작되었으며 그 결과 $95W/in^3$ 이상의 전력밀도와 90.6$\%$의 효율, 0.07$\%$ 이하의 전압안정도를 구현하였다.

• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1632-1642
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• 2014

This paper presents an interleaved resonant converter to reduce the voltage stress of power MOSFETs and achieve high circuit efficiency. Two half-bridge converters are connected in series at high voltage side to limit MOSFETs at $V_{in}/2$ voltage stress. Flying capacitor is used between two series half-bridge converters to balance two input capacitor voltages in each switching cycle. Variable switching frequency scheme is used to control the output voltage. The resonant circuit is operated at the inductive load. Thus, the input current of the resonant circuit is lagging to the fundamental input voltage. Power MOSFETs can be turn on under zero voltage switching. Two resonant circuits are connected in parallel to reduce the current stress of transformer windings and rectifier diodes at low voltage side. Interleaved pulse-width modulation is adopted to decrease the output ripple current. Finally, experiments are presented to demonstrate the performance of the proposed converter.

• 한국전자파학회논문지
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• 제24권11호
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• pp.1091-1097
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• 2013

이 논문은 $0.11{\mu}m$ RF CMOS 공정에서 비대칭 몸체 바이어싱을 적용한 비교기를 사용한 정류기를 제안한다. 제안하는 정류기는 MOSFET와 두 개의 비교기로 이루어져 있다. 이 비교기는 부하 전압이 입력 전압보다 높을 때 생기는 역방향 누설 전류를 줄이는 데 사용한다. 비대칭 몸체 바이어싱을 사용함으로써 비교기의 High에서 Low 상태로 바꾸는 기준 전압을 높이고, 누설 전류가 흐르는 시간을 줄인다. 13.56 MHz의 2 Vpp 교류전압을 입력하고, $1k{\Omega}$의 저항과 1 nF의 커패시터를 부하에 연결한 환경에서 측정하였다. 시뮬레이션 결과, 전압 변환 효율은 87.5 %, 전력 변환 효율은 45 %이고, 측정한 전압 변환 효율은 85.215 %, 전력 변환 효율은 50 %이다.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2005년도 전기학술대회논문집
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• pp.304-309
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• 2005

This paper presents an electronic ballast using a step down converter, a low frequency inverter for high intensity short-arc discharge lamp. The proposed ballast is composed of a full-wave rectifier, a step down converter operated as a current source with power regulation and a low frequency inverter with external ignition circuit. The ignition circuit generates high voltage pulse of $3{\sim}5[kV]$ peak, 130[Hz] periodically. Moreover, it is able to reignite at regular intervals by protective circuit. As experimental results on the test, acoustic resonance phenomenon is eliminated by operating the low frequency square wave voltage and current. Lamp voltage, current and consumption power are measured 123.8[V], 8.1[A] and 1,002[W], respectively. It was confirmed that the designed ballast operate the lamp with a constant power.

• Journal of Advanced Marine Engineering and Technology
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• 제22권3호
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• pp.343-352
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• 1998

Higher frequency of energy transfer or at least energy conversion has to be used in order to reduce the size of inductors and capacitors required in the power supplies. Conventional PWM switching-mode power supplies have a limitation of operating frequency due to switching losses in the switching transistors and rectifier diodes. Means of reducing switching losses have been developed for high-frequency resonant amplifiers or more exactly dc/ac inverters. Because of smooth current and voltage waveforms resonant convertesrs havelower device switching losses and stresses lower electromagnetic interference(EMI) and lower noise than PWM converters. Therefore in this paper design equations of Classs E resonant low dv/dt rectifier with a series resonant capacitor drived using Fourier series techniques. The theory is compared with simulation results obtained for the rectifier operating at 10[MHz] ac input and 5[V] coutput.

• 전력전자학회논문지
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• 제22권4호
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• pp.324-329
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• 2017

The phase controlled rectifier using thyristor is suitable for the high capacity and low-cost system. However, the rectifier output voltage drop is influenced by the grid inductance effect. Supposing the commutation area voltage and current are analyzed, the grid inductance can be estimated using the proposed algorithm. This paper presents the grid inductance estimation method for improved commutation compensation control of the phase controlled rectifier, and the proposed control algorithm effectiveness is verified by simulation.

• ETRI Journal
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• 제38권2호
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• pp.244-251
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• 2016

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.