• Title/Summary/Keyword: Low-temperature bonding

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Creep-Rupture and Fatigue Properties of Transient Liquid Phase Bonded Joints of Ni-Base Single Crystal Superalloy (액상확산접합한 Ni기 단결정 초내열합금의 크리프 파단 및 피로특성)

  • 김대업
    • Journal of Welding and Joining
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    • v.19 no.1
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    • pp.82-87
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    • 2001
  • The creep-rupture and low cycle fatigue properties of transient liquid phase bonded joints of Ni-base single crystal superalloy, CMSX-2 was investigated using MBF-80 insert metal. The (100) orientation of bonded specimen was aligned perpendicular to the joint interface. CMSX-2 was bonded at 1523K for 1.8ks in vacuum, optimum bonding condition. The creep rupture strength and rupture lives of the joints were the almost identical to ones of the base metal. SEM observation of the fracture surfaces of joints after creep rupture test revealed that the fracture surfaces classified three types of region, ductile fracture surface, cleavage fracture surface and interfacial fracture surface. The low cycle fatigue properties of the joints were also the same level as those of base metal. The elongation and reduction of area values of joints were comparable to those of base metal while fell down on creep rupture condition of high temperature.

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The Chip Bonding Technology on Flexible Substrate by Using Micro Lead-free Solder Bump (플렉서블 기반 미세 무연솔더 범프를 이용한 칩 접합 공정 기술)

  • Kim, Min-Su;Ko, Yong-Ho;Bang, Jung-Hwan;Lee, Chang-Woo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.3
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    • pp.15-20
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    • 2012
  • In electronics industry, the coming electronic devices will be expected to be high integration and convergence electronics. And also, it will be expected that the coming electronics will be flexible, bendable and wearable electronics. Therefore, the demands and interests of bonding technology between flexible substrate and chip for mobile electronics, e-paper etc. have been increased because of weight and flexibility of flexible substrate. Considering fine pitch for high density and thermal damage of flexible substrate during bonding process, the micro solder bump technology for high density and low temperature bonding process for reducing thermal damage will be required. In this study, we researched on bonding technology of chip and flexible substrate by using 25um Cu pillar bumps and Sn-Bi solder bumps were formed by electroplating. From the our study, we suggest technology on Cu pillar bump formation, Sn-Bi solder bump formation, and bonding process of chip and flexible substrate for the coming electronics.

Experimental Analysis on the Anodic Bonding with Evaporated Glass Layer

  • Choi, Woo-Beom;Ju, Byeong-Kwon;Lee, Yun-Hi;Jeong, Seong-Jae;Lee, Nam-Yang;Koh, Ken-Ha;Haskard, M.R.;Sung, Man-Young;Oh, Myung-Hwan
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1946-1949
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    • 1996
  • We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at $135^{\circ}C$ with an applied voltage of $35V_{DC}$, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than $1\;{\mu}$ m thick was suitable for anodic bonding. The role of sodium ions for anodic bonding was also investigated by theoretical bonding mechanism and experimental inspection.

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Change in Microstructure and Mechanical Properties of Deoxidized Low-Phosphorous Copper Processed by Accumulative Roll-Bonding with Annealing (ARB가공된 인탈산동의 어닐링에 따른 미세조직 및 기계적 특성 변화)

  • Lee, Seong-Hee;Kim, Chun-Su;Kim, Sang-Shik;Han, Seung-Zeon;Lim, Cha-Yong
    • Korean Journal of Materials Research
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    • v.17 no.7
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    • pp.361-365
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    • 2007
  • A deoxidized low-phosphorous copper processed by eight cycles of accumulative roll-bonding (ARB) was annealed at various temperatures ranging from 100 to $400^{\circ}C$. The annealed copper was characterized by transmission electron microscopy (TEM) and tensile & hardness test. TEM observation revealed that the ultrafine grains developed by the ARB still remained up to $350^{\circ}C$, however above $400^{\circ}C$ they were replaced by equiaxed and coarse grains due to an occurrence of the static recrystallization. The hardness of the copper decreased slightly with the annealing temperature up to $350^{\circ}C$, however they dropped largely above $400^{\circ}C$. Annealing characteristics of the copper were compared with those of an oxygen free copper processed by ARB and subsequently annealed.

Dyeing of Flame Retardant Polyester Fabric developed by using Low-melting-point Bicomponent Filament (저융점 복합사를 이용한 난연 폴리에스터 직물의 염색)

  • Lee, Shin-Hee
    • Fashion & Textile Research Journal
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    • v.15 no.3
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    • pp.467-476
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    • 2013
  • This study investigates the dyeability and the fastness of flame retardant polyester fabric developed by a thermal bonding with a low melting component of flame retardant bicomponent filament (LMFRPC). The fabrics were prepared with flame retardant polyester filaments (FRP) as warp and blended filaments of FRP and LMFRPC as weft. The LMFRPC have a sheath and a core where the core comprises a flame retardant polyester and the sheath comprises a thermoplastic polyester with a low-melting point. The thermal bonding of fabric was conducted in a pin tenter at $170^{\circ}C$ for 60 seconds. Fabric dyeing was conducted with an infrared dyeing machine at various dyeing temperatures and dyeing times. The dyestuffs used in this study were CI disperse Yellow 54, Red 60 and Blue 56 of E-type dyestuff and Orange 30, Red 167 and Blue 79 of S-type dyestuff. This study investigated the morphology of thermal bonded fabric, dyeability and fastness of dyed fabric. Dyeability increased with an increased dyeing temperature. The thermal bonded area increased with the increased LMFRPC content. The dyeability of S-type dyestuff was higher than E-type dyestuff; in addition, the saturated dyeing time was about 20minutes at $130^{\circ}C$ for E and S-type dyestuff. The fastness to washing and rubbing were excellent at a 4-5 Grade.

Study on the Electrical Characteristic of Low-k SiOC films due to the Appropriate Annealing Temperature (저 유전체 SiOC 박막의 열처리 공정 온도에 따른 전기적인 특성에 관한 연구)

  • Oh, Teresa
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.8
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    • pp.1-4
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    • 2011
  • This study was the coorrelation between the electrical properties and the dielectric constant of organic inorganic hybrid type low k SiOC film. SiOC film as low-k films was deposited by the chemical vapor deposition and then annealed at 30 $0{\sim}500^{\circ}C$ to find out the properties of the depending on the temperature and polarity. SiOC film decreased the dielectric constant after annealing process, and the electrical properties were improved at the sample annealed at $400^{\circ}C$. From the XRD patterns, there were two kinds of bonding structures in SiOC film. There was the difference in the bonding structure between the samples annealed under $300^{\circ}C$ and the samples annealed over $400^{\circ}C$. The change was confirmed near $400^{\circ}C$.

A Review on the Bonding Characteristics of SiCN for Low-temperature Cu Hybrid Bonding (저온 Cu 하이브리드 본딩을 위한 SiCN의 본딩 특성 리뷰)

  • Yeonju Kim;Sang Woo Park;Min Seong Jung;Ji Hun Kim;Jong Kyung Park
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.4
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    • pp.8-16
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    • 2023
  • The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO2 structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO2 structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO2. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.

Heat Flow Studies in Low Temperature Detectors (저온검출기의 열전도 연구)

  • Kim, Il-Hwan;Lee, Min-Kyu;Kim, Yong-Hamb
    • Progress in Superconductivity
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    • v.12 no.1
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    • pp.41-45
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    • 2010
  • Low temperature micro-calorimeters have been employed in the field of high resolution alpha spectrometers. These alpha detectors typically consist of a superconducting or metal absorber and a temperature sensor. The temperature sensor can be a transition edge sensor (TES), a metallic magnetic calorimeter (MMC) or other low temperature detectors for an accurate measurement of temperature change due to an alpha particle absorption. We report a recent study of the heat flow between a replaceable absorber and a temperature sensor. A piece of gold foil in $2.4{\times}2.7{\times}0.03\;mm^3$ is used as an absorber. A $40\;{\mu}m$ diameter Au:Er paramagnetic sensor is attached to another small piece of gold foil in $400{\times}200{\times}30\;{\mu}m^3$ to serve as the temperature sensor. This sensor assembly, Au:Er and gold foil, is placed on a miniature SQUID susceptometer in a gradiometric configuration. The thermal connection between the absorber and the sensor was made with three gold bonding wires. The measured thermal conductance shows a linear dependence to the temperature. The values are in a good agreement with Wiedemann-Franz type thermal conductance of the gold wires.

Die design for HIP'ing of Nickel-base Superalloys (초내열합금 HIP 성형을 위한 금형설계)

  • Lim J.S.;Yeom J.T.;Hou Bongliang;Park N.K.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2004.05a
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    • pp.139-142
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    • 2004
  • Nickel base superalloys are widely used for high temperature applications due to heat resisting capability and corrosion resistance at high temperatures. Superalloys with many strengthening alloying elements are frequently used in powder form to alleviate harmful effects of alloy segregation. HIP (hot isostatic pressing) and DB (diffusion bonding) as a form of solid-state bonding process is used to make turbine components, such as integrated turbine rotors. HIP/DB process requires many technical overcomes related to dimensional changes as well as microstructural control. In this research, HIP/DB process for nickel base superalloys, Udimet 720 and MM 247, were investigated with a view to control the dimensional change during the consolidation process. Simple disc-shaped cans were used to select the conceptual die design for the control of the dimensional change especially in radial direction. The change in the shape of consolidated shape was investigated using commercial FE code with constitutive equations fur low temperature plasticity deformation.

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Development of Ceramic Arc-tube by the PIM Process

  • Rhee, Byung-Ohk;Choi, Seung-Chul;Park, Jeong-Shik;Kim, Byoung-Kyu;Kim, Hyung-Soo;Kim, Sang-Woo
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.205-206
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    • 2006
  • A ball-shape alumina arc-tube for low-wattage lamp was developed by the PIM process. An ultra high purity translucentgrade alumina powder was used. In injection molding process, a hot-runner type mold was developed. The translucent-grade alumina powder was extremely sensitive to contamination so that the injection molding condition and atmosphere control in the furnace should be taken care of with extreme caution. Contamination sources were pinpointed with EPMA. The arc-tube was molded in half and two halves were bonded in the middle by a new bonding technique at room temperature developed in this study.

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