• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.1-5
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• 2003

In this project, the efficiency of localized heating for micro systems packaging is developed by using a forced potential scheme microheater. Less than 0.2 Mpa contact pressure was used for bonding with a 200 mA current input for $50{\mu}m$ width, $2{\mu}m$ height and $8mm{\times}8mm$, $5mm{\times}5mm$, $3mm{\times}3mm$ sized phosphorus-doped poly-silicon microheater. The temperature can be raised at the bonding region to $800^{\circ}C$, and it was enough to achieve a strong and reliable bonding in 3 minutes. The IR camera test results show improved uniformity in heat distribution compared with conventional microheaters. For performing the gross leak check, IPA (Isopropanol Alcohol) was used. Since IPA has better wetability than water, it can easily penetrate small openings, and is more suitable for conducting a gross leak check. The pass ratio of bonded dies was 67%, for conventional localized heating, and 85% for our newly developed FP scheme. The bonding strength was more than 25Mpa for FP scheme packaging, which shows that FP scheme can be a good candidate for micro-scale hermetic packaging.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.71-76
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• 2012

A chip interconnection technology for smart fabrics was investigated by using flip-chip bonding of SnBi low-temperature solder. A fabric substrate with a Cu leadframe could be successfully fabricated with transferring a Cu leadframe from a carrier film to a fabric by hot-pressing at $130^{\circ}C$. A chip specimen with SnBi solder bumps was formed by screen printing of SnBi solder paste and was connected to the Cu leadframe of the fabric substrate by flip-chip bonding at $180^{\circ}C$ for 60 sec. The average contact resistance of the SnBi flip-chip joint of the smart fabric was measured as $9m{\Omega}$.

• Korean Journal of Materials Research
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• v.24 no.11
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• pp.585-590
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• 2014

Microstructural evolution in the thickness direction of an oxygen free copper processed by accumulative rollbonding (ARB) is investigated by electron back scatter diffraction (EBSD) measurement. For the ARB, two copper alloy sheets 1 mm thick, 30 mm wide and 300 mm long are first degreased and wire-brushed for sound bonding. The sheets are then stacked and roll-bonded by about 50% reduction rolling without lubrication at an ambient temperature. The bonded sheet is then cut to the two pieces of the same dimensions and the same procedure was repeated on the sheets up to eight cycles. The specimen after 1 cycle showed inhomogeneous microstructure in the thickness direction so that the grains near the surface were finer than those near the center. This inhomogeneity decreased with an increasing number of ARB cycles, and the grain sizes of the specimens after 3 cycles were almost identical. In addition, the aspect ratio of the grains decreased with an increasing number of ARB cycles due to the subdivision of the grains by shear deformation. The fraction of grains with high angle grain boundaries also increased with continuing process of the ARB so that it was higher than that of the low angle grain boundaries in specimens after 3 cycles. A discontinuous dynamic recrystallization occurred partially in specimens after 5 cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.54-58
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• 2017

The effect of low temperature ($250^{\circ}C$) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ${\sim}10^5$ and the $V_{TH}$ values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at $400^{\circ}C$ representing on/off ratio of ${\sim}10^2$ and S. S. value of 10.40 V/decade.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.10
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• pp.928-935
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• 2015

This paper presents low temperature structural tests of a UAV wing which has room temperature-curing adhesive bond. The wing structure is made of carbon fiber reinforced composites, and the skins are bonded to the inner structures (such as ribs and spars) using room temperature-curing adhesive bond. Also, to verify damage tolerance design of the wing structure, barely visible impact damages are intentionally created in the critical areas. The attachment fittings of the wing are fixed in a specially designed chamber which can simulate the low temperature environments of the operating altitudes. The test load is applied by hydraulic actuators which are placed outside the chamber. The structural tests consist of strain survey tests and a durability test for 1-life fatigue load spectrum. During the tests, strains of major parts are measured by strain gauges and FBG sensors. The change of the initial impact damages is also monitored using piezoelectric sensors. The 1-life damage tolerance of the composite structure is verified by the structural tests under the simulated environments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.532-536
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• 2011

The silicon nitride films were prepared by chemical vapor deposition using inductively coupled plasma. During the deposition, the substrate was heated at $150^{\circ}C$ and power 1,000 W. To evolution low temperature manufacture, we have studied the role of source gases, $SiH_4$, $NH_3$, $N_2$, and $H_2$, to produce Si-N and N-H bond in a-SiNx:H film growth. $SiH_4$, $NH_3$, and $N_2$ flow rate fixed at 100, 10, and 10 sccm, $H_2$ flow rate varied from 0 to 10 sccm by small scale. To get the electrical characteristics, we makes MIM structure, and analysis surface bonding state. Experimental data show that Si-N and N-H bond is increased and hence electrical characteristics is showed 3 MV/cm breakdown-voltage, and leakage-current $10^{-7}\;A/cm^2$.

• Journal of Powder Materials
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• v.22 no.2
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• pp.111-115
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• 2015

This study investigates the microstructure and thermal shock properties of polycrystalline diamond compact (PDC) produced by the high-temperature, high-pressure (HPHT) process. The diamond used for the investigation features a $12{\sim}22{\mu}m$- and $8{\sim}16{\mu}m$-sized main particles, and $1{\sim}2{\mu}m$-sized filler particles. The filler particle ratio is adjusted up to 5~31% to produce a mixed particle, and then the tap density is measured. The measurement finds that as the filler particle ratio increases, the tap density value continuously increases, but at 23% or greater, it reduces by a small margin. The mixed particle described above undergoes an HPHT sintering process. Observation of PDC microstructures reveals that the filler particle ratio with high tap density value increases direct bonding among diamond particles, Co distribution becomes even, and the Co and W fraction also decreases. The produced PDC undergoes thermal shock tests with two temperature conditions of 820 and 830, and the results reveals that PDC with smaller filler particle ratio and low tap density value easily produces cracks, while PDC with high tap density value that contributes in increased direct bonding along with the higher diamond content results in improved thermal shock properties.

• The Journal of Advanced Prosthodontics
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• v.6 no.4
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• pp.317-324
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• 2014

PURPOSE. This study was to evaluate the effect of grinding of the inner metal surface during the porcelain try-in stage on metal-porcelain bonding considering the maximum temperature and the vibration of samples. MATERIALS AND METHODS. Ninety-one square prism-shaped ($1{\times}1{\times}1.5mm$) nickel-chrome cast frameworks 0.3 mm thick were prepared. Porcelain was applied on two opposite outer axial surfaces of the frameworks. The grinding was performed from the opposite axial sides of the inner metal surfaces with a low-speed handpiece with two types of burs (diamond, tungsten-carbide) under three grinding forces (3.5 N, 7 N, 14 N) and at two durations (5 seconds, 10 seconds). The shear bond strength (SBS) test was performed with universal testing machine. Statistical analyzes were performed at 5% significance level. RESULTS. The samples subjected to grinding under 3.5 N showed higher SBS values than those exposed to grinding under 7 N and 14 N (P<.05). SBS values of none of the groups differed from those of the control group (P>.05). The types of bur (P=.965) and the duration (P=.679) did not affect the SBS values. On the other hand, type of bur, force applied, and duration of the grinding affected the maximum temperatures of the samples, whereas the maximum vibration was affected only by the type of bur (P<.05). CONCLUSION. Grinding the inner metal surface did not affect the metal-porcelain bond strength. Although the grinding affected the maximum temperature and the vibration values of the samples, these did not influence the bonding strength.

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.435-440
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• 2015

It is a challenge from an industrial point of view to fabricate silicon nitride substrates with high thermal conductivity and good mechanical properties for power devices from high-purity Si scrap powder by means of thick film processes such as tape casting. We characterize the residual carbon and oxygen content after the binder burnout followed by nitridation as a function of the temperature in the temperature range of $300^{\circ}C-700^{\circ}C$ and the atmosphere in a green tape sample which consists of high-purity Si powder and polymer binders such as polyvinyl butyral and dioctyl phthalate. The optimum condition of binder burnout is suggested in terms of the binder removal temperature and atmosphere. If considering nitridation, the burnout of the organic binder in air compared to that in a nitrogen atmosphere could offer an advantage when fabricating reaction-bonded $Si_3N_4$ substrates for power devices to enable low carbon and oxygen contents in green tape samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.509-510
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• 2007

The Breakdown properties of epoxy composites are used for transformers and sensor, which has been studied. As a result, From the measurements of breakdown voltage, the more hardener is increased the stronger breakdown strength at low temperature because the ester of hardener is increased. Breakdown strength at the high temperature is decreased because the temperature at $110^{\circ}C$ is near at $T_g$. When the filler is added, between epoxy and silica is formed interface. Therefore the charge is accumulated in it, and the electric field is concentrated, and breakdown strength is decreased than non-filled specimens. In the case of specimens, the treated with silane, the breakdown strength becomes much higher since this is suggested that silane coupling agent has been improved chemical bonding in the interfaces and has been relaxed the electric filed concentration.