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http://dx.doi.org/10.4313/JKEM.2011.24.7.532

Low Temperature Deposition a-SiNx:H Using ICP Source  

Kang, Sung-Chil (Department of Control and Instrumentation Engineering, Korea University)
Lee, Dong-Hyeok (Department of Display and Semiconductor Physics Engineering, Korea University)
So, Hyun-Wook (Department of Display and Semiconductor Physics Engineering, Korea University)
Jang, Jin-Nyoung (Department of Display and Semiconductor Physics Engineering, Korea University)
Hong, Mun-Pyo (Department of Display and Semiconductor Physics Engineering, Korea University)
Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.7, 2011 , pp. 532-536 More about this Journal
Abstract
The silicon nitride films were prepared by chemical vapor deposition using inductively coupled plasma. During the deposition, the substrate was heated at $150^{\circ}C$ and power 1,000 W. To evolution low temperature manufacture, we have studied the role of source gases, $SiH_4$, $NH_3$, $N_2$, and $H_2$, to produce Si-N and N-H bond in a-SiNx:H film growth. $SiH_4$, $NH_3$, and $N_2$ flow rate fixed at 100, 10, and 10 sccm, $H_2$ flow rate varied from 0 to 10 sccm by small scale. To get the electrical characteristics, we makes MIM structure, and analysis surface bonding state. Experimental data show that Si-N and N-H bond is increased and hence electrical characteristics is showed 3 MV/cm breakdown-voltage, and leakage-current $10^{-7}\;A/cm^2$.
Keywords
Low-temperature; ICP source; I-V; OES; FT-IR;
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