• Journal of the Korea Institute of Military Science and Technology
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• v.20 no.3
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• pp.345-351
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• 2017

A wind tunnel test for the scaled parachute models was performed to verify aerodynamic characteristics for practical usage of Korean low cost low altitude aerial delivery system. The cruciform shaped cargo parachute models for heavy and light weight were ejected into wind tunnel test section; and the drag forces acting on the models in steady condition were measured in accordance with velocity. Also, the maximum opening forces during inflation were obtained and captured by a high speed camera to analyze the inflation characteristics and evaluate the design of the low cost aerial delivery system. The results showed a reliable stability and met the design requirement of delivery operation system for R.O.K Air Force.

• Journal of the Society of Naval Architects of Korea
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• v.45 no.4
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• pp.426-431
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• 2008

The high-strength low-alloy(HSLA) steels have low carbon contents($0.05{\sim}0.25%$ C) in order to produce adequate formability and weldability, and they have manganese contents up to 1.7%. Small quantities of silicon, chromium, nickel, copper, aluminum, molybdenum are used in various combinations. The results contained in this paper can provide the valuable information on the development of $-40^{\circ}C$ low temperature HSLA. Furthermore, the present experimental data will provide important database for casting steel materials of the offshore structure.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.2
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• pp.71-77
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• 2015

Upcoming ground-breaking applications for always-on tiny interconnected devices steadily demand two-fold features of processor cores: aggressively low power consumption and enhanced performance. We propose implementation of a novel superscalar low-power processor core with a low supply voltage. The core implements intra-core low-power microarchitecture with minimal performance degradation in instruction fetch, branch prediction, scheduling, and execution units. The inter-core lockstep not only detects malfunctions during low-voltage operation but also carries out software-based recovery. The chip incorporates a pair of cores, high-speed memory, and peripheral interfaces to be implemented with a 65nm node. The processor core consumes only 24mW at 350MHz and 0.68V, resulting in power efficiency of $80{\mu}W/MHz$. The operating frequency of the core reaches 850MHz at 1.2V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.797-801
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• 2014

This research presented the concept of employing the punch-through diode triggered SCRs (PTTSCR) for low voltage ESD applications such as transient voltage suppression (TVS) devices. In order to demonstrate the better electrical properties, various traditional ESD protection devices, including a silicon controlled rectifier (SCR) and Zener diode, were simulated and analyzed by using the TCAD simulation software. The simulation result demonstrates that the novel PTTSCR device has better performance in responding to ESD properties, including DC dynamic resistance and capacitance, compared to SCR and Zener diode. Furthermore, the proposed PTTSCR device has a low reverse leakage current that is below $10^{-12}$ A, a low capacitance of $0.07fF/mm^2$, and low triggering voltage of 8.5 V at $5.6{\times}10^{-5}$ A. The typical properties couple with the holding voltage of 4.8 V, while the novel PTTSCR device is compatible for protecting the low voltage, high speed ESD protection applications. It proves to be good candidates as ultra-low capacitance TVS devices.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.1
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• pp.43.1-43.1
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• 2014

It has been suggested that only the most luminous AGNs ($L{\geq}$ [10] $^{45}L_{\odot}$ ) are triggered by galaxy mergers, while less luminous AGNs (L~ [10] $^{43}L_{\odot}$) are driven by other internal processes. Lack of merging features in low luminosity AGN host galaxies has been a main argument against the idea of merger triggering of low luminosity AGNs, but merging, especially a rather minor one, might still have played an important role in low luminosity AGNs since minor merging features in low luminosity are more difficult to identify than major merging features. Using SNUCAM on the 1.5m telescope at Madanak observatory, we obtained deep images of NGC 7743 which is a barred spiral galaxy classified as a Seyfert 2 AGN with a low bolometric luminosity of $5{\times}$ [10] $^{42}L_{\odot}$. Surprisingly, we newly discovered merging features around the galaxy, which indicate past merging activity on the galaxy. This example indicates the merging fraction of low luminosity AGNs may be much higher than previously thought, hinting the importance of galaxy merger even in low luminosity AGN.

• Journal of the Optical Society of Korea
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• v.6 no.3
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• pp.59-71
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• 2002

Photonic band gap structures have a high potential for nearly zero-threshold lasers. This paper describes new-types of low-threshold photonic crystal lasers fabricated in InGaAsP slab waveguides free-standing in air. Two-types of photonic crystal lasers are studied. One is a single-cell nano-cavity laser formed in a square array of air holes. This photonic band gap laser operates in the smallest possible whispering gallery mode with a theoretical Q >30000 and exhibits low threshold pump power of 0.8 mW at room temperature. The nther laser does not have any cavity structure and the lasing operation originates from the enhanced optical density of states near photonic band edges. A very low threshold of 35 $\mu$W (incident pump power) is achieved from this laser at 80 K, one of the lowest values ever reported. This low threshold is benefited from low optical losses as well as enhanced material gain at low temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.535-541
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.129-157
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• ETRI Journal
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• v.32 no.4
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• pp.520-529
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• 2010

In this paper, we present a low-voltage low-dropout voltage regulator (LDO) for a system-on-chip (SoC) application which, exploiting the multiplication of the Miller effect through the use of a current amplifier, is frequency compensated up to 1-nF capacitive load. The topology and the strategy adopted to design the LDO and the related compensation frequency network are described in detail. The LDO works with a supply voltage as low as 1.2 V and provides a maximum load current of 50 mA with a drop-out voltage of 200 mV: the total integrated compensation capacitance is about 40 pF. Measurement results as well as comparison with other SoC LDOs demonstrate the advantage of the proposed topology.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.65-68
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• 2008

The present work was performed to investigate the effect of coiling temperature on the annealed texture in Cu/Nb-added ultra-low-carbon steels. The ultra-low-carbon steels were coiled at 650 and $720^{\circ}C$, respectively. The result showed that the Cu-added ultra-low-carbon steel at a low coiling temperature produced a desirable annealed texture related to good formability. On the other hand, Nb-added ultra-low-carbon steel at a high coiling temperature also produced a desirable texture. This is attributed to the effect of Nb, which retards recrystallization during the coiling process.