• Electronic Materials Letters
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• v.14 no.6
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• pp.657-668
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• 2018

Organic-inorganic hybrid lead halide perovskites have been extensively investigated for various optoelectronic applications. Particularly, owing to their ability to form highly crystalline and homogeneous films utilizing low-temperature solution processes (< $150^{\circ}C$), perovskites have become promising photoactive materials for realizing high-performance flexible solar cells. However, the current use of mesoporous $TiO_2$ scaff olds, which require high-temperature sintering processes (> $400^{\circ}C$), has limited the fabrication of perovskite solar cells on flexible substrates. Therefore, the development of a low-temperature processable charge-transporting layer has emerged as an urgent task for achieving flexible perovskite solar cells. This review summarizes the recent progress in low-temperature processable electron- and hole-transporting layer materials, which contribute to improved device performance in flexible perovskite solar cells.

• Journal of Information Display
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• v.11 no.1
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• pp.21-23
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• 2010

A new level shifter using low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) for low-power applications is proposed. The proposed level shifter uses a capacitive-coupling effect and can reduce the power consumption owing to its no-short-circuit current. Its power saving over the conventional level shifter is 72% for a 3.3 V input and a 10 V output.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.29-34
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• 2017

A CMOS-based temperature sensor is proposed for low-voltage and low-power on-chip thermal monitoring applications. The proposed temperature sensor converts a proportional to absolute temperature (PTAT) current to a PTAT frequency using an integrator and hysteresis comparator. In addition, it operates in the subthreshold region, allowing reduced power consumption. The proposed temperature sensor was fabricated in a standard 90 nm CMOS technology. Measurement results of the proposed temperature sensor show a temperature error of between -0.81 and $+0.94^{\circ}C$ in the temperature range of 0 to $70^{\circ}C$ after one-point calibration at $30^{\circ}C$, with a temperature coefficient of $218Hz/^{\circ}C$. Moreover, the measured energy of the proposed temperature sensor is 36 pJ per conversion, the lowest compared to prior works.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1279-1282
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• 2006

An ultra low-power down-conversion level shifter using low temperature poly-crystalline silicon thin film transistors is proposed for mobile applications. The simulation result shows that the power consumption of the proposed circuits is only 17% and the propagation delay is 48% of those of the conventional cross-coupled level shifter without additional area. And the measured power consumption is only 21% of that of the crosscoupled level shifter.

• Journal of Mechanical Science and Technology
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• v.19 no.12
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• pp.2303-2311
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• 2005

Super low temperature has many applications nowadays, from the chemical processing, automotives manufacturing, plastic recycling, etc. Considering of its wide application in the present and the future, study of the super-low temperature refrigeration system should be actively carried out. Super low state temperature can be achieved by using multi-stage refrigeration system. This paper present the development and testing of cascade refrigerator system for achieving super-low temperature. On this experiment, two different types of HCFCs refrigerants are utilized, R-22 and R-23 were applied for the high stage and the low-pressure stage respectively. The lowest temperature in the low-pressure evaporator that can be achieved by this cascade refrigeration system is down to $-85^{\circ}C$. This experiment is aimed to study the effect of inlet pressure of the low-pressure stage evaporator and low-pressure stage compressors inlet pressure characteristics to the overall temperature characteristics of cascade refrigeration system.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.1-6
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• 1995

Polycrystalline Si films have been used in many applications such as thin film transistors(TFT), image sensors and LSI applications. In this research deposition of Si films at low temperatures with remote plasma enhanced CVD from Si2H6-SiF4-H2 on SiO2 was studied and their crystallinity was investigated. It was condluded that growth of crystalline Si films was favorable with (1) low Si2H6 flow rates, (2) moderate plasma power, (3) moderate SiF4 flow rates, (4) moderate substrate temperature, and (5) suitable method of surface cleaning.

• Journal of IKEEE
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• v.21 no.1
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• pp.66-69
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• 2017

In recent year, energy harvesting technologies from the ambient environments such as light, motion, wireless waves, and temperature again a lot of attraction form research community [1-5] due to its efficient solution in order to substitute for conventional power delivery methods, especially in wearable together with on-body applications. The drawbacks of battery-powered characteristic used in commodity applications lead to self-powered, long-lifetime circuit design. Thermoelectric generator, a solid-state sensor, is useful compared to the harvesting devices in order to enable self-sustained low-power applications. TEG based on the Seebeck effect is utilized to transfer thermal energy which is available with a temperature gradient into useful electrical energy. Depending on the temperature difference between two sides, amount of output power will be proportionally delivered. In this work, we illustrated a low-input voltage energy harvesting circuit applied discontinuous conduction mode (DCM) method for getting an adequate amount of energy from thermoelectric generator (TEG) for a specific wearable application. With a small temperature gradient harvested from human skin, the input voltage from the transducer is as low as 60mV, the proposed circuit, fabricated in a $0.6{\mu}m$ CMOS process, is capable of generating a regulated output voltage of 4.2V with an output power reaching to $40{\mu}W$. The proposed circuit is useful for powering energy to battery-less systems, such as wearable application devices.

• Journal of the Society of Naval Architects of Korea
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• v.48 no.3
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• pp.189-199
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• 2011

Austenite stainless steel(ASS), aluminum alloy and nickel steel alloy are the most widely used in many cryogenic applications due to superior mechanical properties at low temperature. The Face-Centered Cubic(FCC) and Hexagonal Close-Packed(HCP) materials are used for the primary and secondary insulation barrier of Liquefied Natural Gas(LNG) carrier tank and various kinds of LNG applications currently. In this study, tensile tests of ASS, aluminum alloy and nickel steel alloy were carried out for the acquisition of quantitative mechanical properties under the cryogenic environment. The range of thermal condition was room temperature to $-163^{\circ}C$ and strain rate range was 0.00016/s to 0.01/s considering the dependencies of temperatures and strain rates. The comprehensive test data were analyzed in terms of the characteristics of mechanical behavior for the development of constitutive equation and its application.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.177-180
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• 2002

Microwave has been utilized for low-temperature crystallization of amorphous Si films. Microwave annealing lowered the crystallization temperature and shortened the annealing time. The combination of Ni and microwave applications on a-Si films further enhanced the crystallization. The enhancement was due to both reduced nucleation activation energy and growth activation energy.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.121-121
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• 2018

Copper is a promising electronic material due to low cost and high electrical conductivity. However, the oxidation problem in an ambient condition makes a crucial issue in practical applications. In here, we developed a simple and cost-effective Cu patterning method on a flexible PET film by combining a solution processable Cu nanoparticle patterning and a low temperature post-processing using acetic acid treatment, laser sintering process and acid-assisted laser sintering process. Acid-assisted laser sintering processed Cu electrode showed superior characteristics in electrical, mechanical and chemical stability over other post-processing methods. Finally, the Cu electrode was applied to the flexible electronics applications such as flexible and transparent heaters and touch screen panels.