Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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The crystallinity of silicon films deposited at low temperatures with Remote Plasma Enhanced Chemical Vapor Deposition(RPECVD)

원거리 플라즈마 화학증착을 이용한 규소 박막의 결정성

  • 김동환 (포항공과대학교 화학공학과 재료공정 연구실) ;
  • 이일정 (포항공과대학교 화학공학과 재료공정 연구실) ;
  • 이시우 (포항공과대학교 화학공학과 재료공정 연구실)
  • Published : 1995.02.01
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Abstract

Polycrystalline Si films have been used in many applications such as thin film transistors(TFT), image sensors and LSI applications. In this research deposition of Si films at low temperatures with remote plasma enhanced CVD from Si2H6-SiF4-H2 on SiO2 was studied and their crystallinity was investigated. It was condluded that growth of crystalline Si films was favorable with (1) low Si2H6 flow rates, (2) moderate plasma power, (3) moderate SiF4 flow rates, (4) moderate substrate temperature, and (5) suitable method of surface cleaning.

Keywords