• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.370-373
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• 2011

We investigated the effects of low temperature ($500^{\circ}C$) $O_2$ annealing on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics such as flat band voltage shift (${\Delta}V_{fb}$) by hysteresis without oxide capacitance reduction. We suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.4
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• pp.130-136
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• 2018

In this paper, the effects of different 3D printing parameters including laminated angle and annealing temperature, were observed for their effects on tensile testing. In 3D printing, a filament is heated quickly, extruded, and then cooled rapidly. Because plastic is a poor heat conductor, it heats and cools unevenly causing the rapid heating and cooling to create internal stress within the printed part. Therefore, internal stress can be removed using annealing and to increase tensile strength and strain. During air cooling at annealing temperature $140^{\circ}C$, the strain of laminated angle $45^{\circ}$ specimens tended to increase by 46% while the tensile stress tended to increase by 7.4%. During oven cooling at annealing temperature $140^{\circ}C$, the strain of laminated angle $45^{\circ}$ specimens tended to increase by 34% while the tensile stress tended to increase by 22.2%. In this study, we found "3D printing with annealing" eliminates internal stress and increases the strength and stiffness of a printed piece. On the microstructural level, annealing reforms the crystalline structures to even out the areas of high and low stress, which created fewer weak areas. These results are very useful for making 3D printed products with a mechanical strength that is suitable for applications.

• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.91-98
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• 1992

In a $Co_{67}Fe_{4.5}Nb_{2}Si_{10}B_{15}$ amorphous alloy ribbon the effect to two-step annealing on the soft magnetic properties has been studied. By two-step annealing method which the second annealing at low temperature of $310^{\circ}C$ for 2 hours is undertaken after the primary annealing at high temperature above $480^{\circ}C$ for 20 minutes at the vacuum state, the coercive force and the squareness are not changed nearly but the initial permeability at d.c. and the effective permeability at a.c. are remark-ably increased compared with the one-step annealing. The maxima of the initial permeability and the effective permeability at 1 kHz after the two-step annealing are 290,000 and 41,000, respectively, which are 30% higher than those of the one-step annealing. The change of magnetic properties with annealing temperature is discussed in terms of the residual stress, the domain size, the cluster and the crystalline phase.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.150-154
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• 1998

Photoluminescence(PL), XRD, TEM results $5\times1016/\textrm{cm}^2, 1\times10^{17}/\textrm{cm}^2, 3\times10^{17}/\textrm{cm}^2$ Si-implanted $SiO_2$ films on crystalline silicon are reported. At low dose implantation and low annealing temperature, visible PL are observed. The PL spectrum has 7400$\AA$ and 8360$\AA$ peaks. As annealing time increased, the PL intensity are increased and peak positions are changed. The PL spectrum are not observed at high dose implantation and high annealing temperature. For the samples of low dose and high annealing temperature, visible PL are observed at short annealing time (30 minutes) and disappear for more than 1 hour annealing. From XRD and TEM results, silicon cluster are related to nonradiative defects. It is concluded that the origin of visible PL in Si implanted SiO2 films are not nanocrystal but two kinds of radiative defects. The Si-O-O bonding related defects (O rich defects) and Si-Si-O bonding related defects (Si rich defects) are related to the PL spectrum and depend on concentraion of Si implantation, annealing temperature and time.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.65 no.1
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• pp.53-56
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• 2016

Because of the low pollution resistance of the porcelain electrical insulator itself, in this work the anti-pollution performance of insulator was improved by using the functional coating. The ceramic substrates that components were same as the porcelain electrical insulator were used in this experiment. The functional films were coated on the ceramic substrate by using a spray coating method, and then the coated substrate were annealed under different coating condition such as natural curing and annealing temperature of $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$. Then, the contact angles of the coated surfaces were measured and the minimum angle ($8.3^{\circ}$) was obtained at $400^{\circ}C$. The anti-contamination properties were measured, revealing that as the contact angle decreased, the anti-contamination properties improved. The hardness and adhesion were small at the natural curing condition however the excellent mechanical properties were obtained under higher temperature annealing.

• Journal of Magnetics
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• v.16 no.2
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• pp.177-180
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• 2011

0.30 mm thick and 90 mm wide thin foils made of Fe-6.5wt.%Si alloy were successfully fabricated by traditional rolling. The as-rolled sheets had good shapes and shining metal luster. The effects of annealing temperature on the magnetic properties of the sheets were investigated. Excellent Dc properties ($H_c$: 11.55 A/m, ${\mu}_m$: 23710, and $B_s$: 1.439 T) were obtained at an annealing temperature of 1453 K for 1.5 h. At low frequencies ($\leq$ 1 kHz), heat treatment temperature has little effect on iron loss which remained at the level of 9.8 W/kg. Annealing at 1273 K for 1.5 h is optimum for frequencies above 5 kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.5-6
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• 2009

In this paper, plasma ion implant is performed with $PH_3$ gas diluted by helium gas on P-type Si wafer (100). Spike Rapid Thermal Processing(RTP) annealing performed for 30~60 sec from $800\;^{\circ}C$ to $1000\;^{\circ}C$ in $N_2+O_2$ ambient. Crystalline defect is analyzed by Transmission Electron Microscope(TEM) and Double crystal X-ray Diffraction(DXRD). Contact resistivity($\rho c$), contact resistance(Rc) and sheet resistance(Rs) are analyzed by measuring Transfer Length Method(TLM) using 4155C analysis. As annealing temperature increase, Rs decrease and ${\rho}c$ and Rc increase at temperature higher than $850\;^{\circ}C$. We achieve low Rs, ${\rho}c$ and Rc with Plasma ion implant and spike RTP.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1131-1134
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• 2003

A low temperature doping technique has been studied for application in poly-Si TFT's on plastic substrates. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of $120^{\circ}C$, and a sheet resistance as low as $300 {\Omega}/sq$. was obtained.

• Journal of Welding and Joining
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• v.17 no.1
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• pp.133-144
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• 1999

To fine seam annealer capacity of through thickness seam annealing in terms of through thickness microstructure change with increased toughness and elongation leaving heat trace on it, high strength steel pipes of ERW with different thickness were tested in different seam annealing temperature measured on the outer surface of pipes. Annealing temperature and microstructure of the weld seam were changed through applied seam annealing condition. Toughness and tensile test with hardness and microstructure analysis were done on the annealed weld seam to fine its characteristics as a primary step and annealing characteristics according to different seam annealing condition. Through a study of annealed ERW weld seam characteristics and seam annealing technology, amount of electric power should apply in decreased manner to arranged inductors of annealer in the order of 1st, 2nd, 3rd, so on for proper seam annealing. For example of 15.4mm thick and 610mm outside diameter pipe, applied power for proper seam annealing is 600 -650kw at 1st inductor, 450 - 500kw at 2nd inductor, 200-250 kw at 3rd inductor of annealer during 10 - 12M/minute moving speed of pipe. Also, the penetration depth of heat trace along the thickness direction of weld during seam annealing can be estimated through the equation 17mm/kv$\times$voltage(kv) with the microstructure and hardness analysis of thick weld seam as well as study of seam annealing and comparison of cooling condition to CCT diagram of low carbon high strength steel. From this result, the difference between the technological applicability of full annealing condition based on phase diagram and full penetration of heat trace based on CCT diagram along the thickness of weld seam is discussed.